• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.527-528
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• 2009

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• 한국전자파학회논문지
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• 제25권3호
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• pp.376-379
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• 2014

본 논문은 910 MHz와 2.45 GHz 대역에서 동작하는 RFID 트랜시버용 전력증폭기를 설계 및 제작하였다. 제안된 이중 대역 전력증폭기는 집중정수 소자로 구현된 910 MHz 대역의 정합 회로와 분포정수 소자로 구현된 2.45 GHz 대역의 정합 회로로 구성되며, 두 대역의 격리를 위하여 910 MHz 대역에 대하여 대역 제거 필터(band rejection filter)로 동작하고, 2.45 GHz 대역에서는 대역 통과 필터(band pass filter)로 동작하는 ${\lambda}/2$ 직렬 마이크로스트립 전송 선로로 구성되어 있다. 제작된 이중 대역 전력증폭기는 910 MHz와 2.45 GHz에서 이득이 각각 8 dB와 1.5 dB를 나타냈으며, 입력 전력 10 dBm을 인가하여 얻은 출력 전력은 두 대역 모두 20 dBm을 얻었다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1997년도 전력전자학술대회 논문집
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• pp.314-317
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• 1997

The purpose of this study is developing a converter which is able to convert a 300[KW] power, and is a DC power supply output a 1500[V] DC voltage for inverter driving. The power converter is driven by two converter serisely and keep a high power factor of power source. This system is haven all the characteristic of voltage source converter by having a processing ability of regenerating power. The two converters controls a PWM modulation and output voltage using a only one 16 bit DSP processor.

• 한국전자파학회논문지
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• 제19권8호
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• pp.837-843
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• 2008

본 논문에서는 메타 재질을 이용하여 이중 대역에서 동작하는 전력 분배기를 제안하였다. 여기에서 사용된 메타 재질은 left-hand 특성을 인위적으로 캐패시터와 인덕터로 구현하고, 이것의 파라스틱 성분에 의한 Right-hand 성분이 추가된 CRLH 전송 선로로 구현하였다. 이러한 CRLH 전송 선로 특성을 이용하여 기존 Gysel이 고안한 전력 분배기와 결합하여 고 전력에서 사용이 가능하고 이중 대역에서 동작하는 전력 분배기를 제작하였다. 본 논문에서 제작한 전력 분배기는 0.88 GHz와 1.67 GHz 이중 대역에서 동작하고, 각 주파수에서 21.0 dB, 15.8 dB의 반사 계수와 3.83 dB, 3.64 dB의 삽입 손실을 확인하였다. 또한, 각 출력 포트 간의 위상차는 $3{\sim}6^{\circ}$됨을 확인하였다.

• 전기학회논문지
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• 제59권12호
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• pp.2268-2272
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• 2010

This letter presents that a rectenna can utilize more stable wireless power by using a new design dual band/dual polarization microstrip patch antenna and 2 stage voltage multiplier at 2.4 GHz band and 3.1 GHz band. The proposed antenna is a new microstrip patch antenna design to make impedance matching possible by using slotted capacitive coupling between the patch and $50\Omega$ feed line on a ground plane. Its advantage is that the size of the rectenna can be reduced by using $50\Omega$ feed line on the ground plane, which can be used efficiently. The dual band/dual polarization microstrip patch antenna shows circular polarization at 2.4 GHz band and linear polarization at 3.1 GHz band. Under -10 dB return loss, The dual band/dual polarization microstrip patch antenna obtains 340 MHz bandwidth as 2.23~2.57 GHz and 375 MHz bandwidth as 2.95~3.325 GHz. Also, 2 Stage Voltage multiplier is possible to operate at 2.4 GHz band and 3.1 GHz band. The designed retenna can usually obtain wireless power at both 3.1 GHz band, and 2.4 GHz band applications such as Wi-Fi, Bluetooth, Wireless LAN, etc. So more stable wireless power can be utilized at the same time.

• 한국지열·수열에너지학회논문집
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• 제9권4호
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• pp.1-7
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• 2013

This study is to compare energy consumption of air-source, ground-source and dual-source heat pump systems during intermediate season using dynamic simulation. Ground-source heat pump has higher COP than that of air-source but requires additional power consumption of auxiliary equipment such as circulation pump. During intermediate season when the outdoor air temperature is favorable, total COP of air-source heat pump may be greater than that of ground-source when circulation pump power consumption is included. Dual-source heat pump which selects the more favorable heat source is compared with air-source only and ground-source only heat pumps for total power consumption. Results show that power consumption of dual-source heat pump is lower than that of ground-source only by 0.73%.

• Journal of electromagnetic engineering and science
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• 제3권1호
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• pp.1-6
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• 2003

In this paper, a sub-harmonic dual-gate FET mixer is suggested to improve the isolation characteristic between LO and RF ports of an unbalanced mixer. The mixer was designed by using single-gate FET cascode structure and driven by the second harmonic component of LO signal. A dual-gate FET mixer has good isolation characteristic since RF and LO signals are injected into gatel and gate2, respectively. In addition, the isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer due to the large frequency separation between the LO and RF frequencies. As RF power was -30 ㏈m and LO power was 0 ㏈m, the designed mixer yielded the -47.17 ㏈m LO-to-RF leakage power level, 10 ㏈ conversion gain, -2.5 ㏈m OIP3, -12.5 ㏈m IIP3 and -1 ㏈m 1 ㏈ gain compression point. Since the LO-to-RF leakage power level of the designed mixer is as good as that of a double-balanced mixer, the sub-harmonic dual-gate FET mixer can be utilized instead.

• 대한전자공학회논문지TC
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• 제44권3호
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• pp.1-6
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• 2007

와이브로 및 무선랜 이중 대역 이중 모우드 송신기에서 전력부가효율을 증가시킬 수 있는 바이어스 스위칭 기술을 제시한다. 서로 다른 주파수 대역과 출력을 갖는 송신기에서 높은 효율을 얻을 수 있는 기법으로 바이어스 스위칭을 제안하고 드레인과 게이트 바이어스의 변화에 따른 영향을 각각 시뮬레이션 하였다. 바이어스 스위칭을 적용하지 않은 경우의 전력부가효율에 비해 시뮬레이션 된 최적의 고정 게이트 바이어스를 공급하고 드레인 바이어스 스위칭을 한 경우 매우 개선된 전력 효율 특성을 얻을 수 있었다 이러한 드레인 및 게이트 바이어스 스위칭 기술은 다양한 기능을 필요로 하는 다중 모우드 통신 시스템에 유용할 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.