Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of the breakdown characteristics of SOI LIGBT with dual-epi layer

이중에피층을 갖는 SOI LIGBT의 항복전압 특성분석

  • 김형우 (한국전기연구원 전력반도체연구그룹) ;
  • 김상철 (한국전기연구원 전력반도체연구그룹) ;
  • 서길수 (한국전기연구원 전력반도체연구그룹) ;
  • 김은동 (한국전기연구원 전력반도체연구그룹)
  • Published : 2003.07.10
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Abstract

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

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