• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.174-180
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• 2012

Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

• The Korean Journal of Financial Management
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• v.20 no.2
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• pp.73-94
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• 2003

In general, the interest rate is forecasted by the parametric method which assumes the interest rate follows a certain distribution. However the method has a shortcoming that forecasting ability would decline when the interest rate does not follow the assumed distribution for the stochastic behavior of interest rate. Therefore, the nonparametric method which assumes no particular distribution is regarded as a superior one. This paper compares the interest rate forecasting ability between the two method for the Monetary Stabilization Bond (MSB) market in Korea. The daily and weekly data of the MSB are used during the period of August 9th 1999 to February 7th 2003. In the parametric method, the drift term of the interest rate process shows the linearity while the diffusion term presents non-linear decline. Meanwhile in the nonparametric method, both drift and diffusion terms show the radical change with nonlinearity. The parametric and nonparametric methods present a significant difference in the market price of interest rate risk. This means in forecasting the interest rate and the market price of interest rate risk, the nonparametric method is more appropriate than the parametric method.

• Nuclear Engineering and Technology
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• v.55 no.12
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• pp.4357-4366
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• 2023

MARS-KS, a domestic regulatory confirmatory code of Republic of Korea, had been developed by integrating RELAP5/MOD2 and COBRA-TF. The integration of COBRA-TF allowed to extend the capability of MARS-KS, limited to one-dimensional analysis, to multi-dimensional analysis. The use of COBRA-TF was mainly focused on subchannel analyses for simulating multi-dimensional behavior within the reactor core. However, this feature has been remained as a legacy without ongoing maintenance. Meanwhile, MARS-KS also includes its own multidimensional component, namely MULTID, which is also feasible to simulate three-dimensional convection and diffusion. The MULTID is capable of modeling the turbulent diffusion using simple mixing length model. The implementation of the turbulent mixing is of importance for analyzing the reactor core where a disturbing cross-sectional structure of rod bundle makes the flow perturbation and corresponding mixing stronger. In addition, the presence of this turbulent behavior allows the secondary transports with net mass exchange between subchannels. However, a series of assessments performed in previous studies revealed that the turbulence model of the MULTID could not simulate the aforementioned effective mixing occurred in the subchannel-scale problems. This is obvious consequence since the physical models of the MULTID neglect the effect of mass transport and thereby, it cannot model the void drift effect and resulting phasic distribution within a bundle. Thus, in this study, the turbulence mixing model of the MULTID has been improved by means of the inter-channel mixing model, widely utilized in subchannel analysis, in order to extend the application of the MULTID to small-scale problems. A series of assessments has been performed against rod bundle experiments, namely GE 3X3 and PSBT, to evaluate the performance of the introduced mixing model. The assessment results revealed that the application of the inter-channel mixing model allowed to enhance the prediction of the MULTID in subchannel scale problems. In addition, it was indicated that the code could not predict appropriate phasic distribution in the rod bundle without the model. Considering that the proper prediction of the phasic distribution is important when considering pin-based and/or assembly-based expressions of the reactor core, the results of this study clearly indicate that the inter-channel mixing model is required for analyzing the rod bundle, appropriately.

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

• Journal of Korean Society of Transportation
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• v.20 no.5
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• pp.67-79
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• 2002

In this paper, observed trajectories of a vehicle platoon are viewed as one realization of a finite sequence of random trajectories. In this point of view, we develop novel and mathematically rigorous concept of traffic flow variables such as local traffic density, instantaneous traffic flow, and velocity field and investigate their nature on a general probability space of a sequence of random trajectories which represent vehicle trajectories. We present a simple model of random trajectories as an illustrative example and, derive the values of traffic flow variables based on the new definitions in this model. In particular, we construct the model for the sequence of random vehicle trajectories with a system of stochastic differential equations. Each equation of the system nay represent microscopic random maneuvering behavior of each vehicle with properly designed drift coefficient functions and diffusion coefficient functions. The system of stochastic differential equations nay generate a well-defined probability space of a sequence of random vehicle trajectories. We derive the partial differential equation for the expected cumulative plot with appropriate initial conditions. By solving the equation with numerical methods, we obtain the values of expected cumulative plot, local traffic density, and instantaneous traffic flow. In addition, we derive the partial differential equation for the expected travel time to a certain location with appropriate initial and/or boundary conditions, which is solvable numerically. We apply this model to a case of single vehicle trajectory.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.307-312
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• 2014

We present a full finite element analysis for plasma discharge in etching process of semiconductor circuit. The charge transport equations of hydrodynamic diffusion-drift model and the electric field equation were numerically solved in a fully coupled system by using a standard finite element procedure for transient analysis. The proposed method was applied to a real plasma reactor in order to characterize the plasma sheath that is closely related to the yield of the etching process. Throughout the plasma discharge analysis, the base electrode of reactor was tested and modified for improving the uniformity around the wafer edge. The experiment and numerical results were examined along with SEM data of etching quality. The feasibility and usefulness of the proposed method was shown by both numerical and experimental results.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.