• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.85-89
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• 2018

In this study, functional transparent conducting layers were investigated for Si-based photoelectric applications. Double transparent conductive oxide (TCO) films were deposited on a Si substrate in the sequence of indium tin oxide (ITO) followed by aluminum-doped zinc oxide (AZO). First, we observed that the conductivity and transparency of AZO dominate the overall performance of the double TCO layers. Secondly, the double layered TCO film (consisting of AZO/ITO) deposited by sputtering was compared to a AZO-only film in terms of their optical and electrical properties. We prepared three different AZO films: ITO:3min/AZO:10min, ITO:5min/AZO:7min, and ITO:7min/AZO:4min. The results show that the optical properties (transmittance, absorbance, and reflection) can be controlled by the film composition. This may provide a significant pathway for the manipulation of the optical and electrical properties of photoelectric devices.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.79-87
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• 1997

Anti-reflective and anti-static double layered films were prepared on the VDT panel by sol-gel spin-coating method. Their electrical, opticla, and mechanical properties were investigated. The outer SiO2 film with low re-fractive index was coated over the inner ATO(Antimony-doped Tin Oxide)-SiO2 film which was prepared by mixing ATO sol with SiO2 at molar ratio of 68:32 to satisfy the interference condition of double layers. The heat treatment was conducted at 45$0^{\circ}C$ for 30 min where residual organics were completely removed. The sheet resistance of ATO single layer showed the minimum value of 6$\times$107$\Omega$/$\square$ at 3 mol% addition of Sb and that of SiO2/ATO-SiO2 increased slightly with increasing SiO2 mol% up to 30 mol%, and then increased steeply to the value of 3$\times$108$\Omega$/$\square$ at 32 mol%. The reflectance of double layered films was about 0.64% at the wavelength of 550nm and the transmittance increased about 3.20%. The hardness of double layered films was almost the same as that of uncoated VDT panel, 471.4kg.f/mm2.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.21-24
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• 2002

In this paper, for the study on the fabrication of YBCO superconductor wire, a double layered YBCO superconductor wire was fabricated by electrophoretic method on metal Ag wire(${\Psi}$0.8 mm). On the basis of previous researches for the fabrication of superconductor wire, the acetone suspension solution with 8 vol.% of 1% PEG(1000) was used and high molecular adhesive was experimentally performed for an improvement of the critical current density of superconductor wire. It was found that the Ag inter-layer deposited on the superconductor wire affect to the state of second YBCO film and its critical current density.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.244-248
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• 1994

Magnetic and Magneto-optical characteristics of NdTbFeCo alloy films and NdTbFeCo/TbFeCo double-layered films have been investigated. It was observed that the Kerr rotation(${\theta}_{k}$) in the short wavelength region increased and the coercivity decreased as the substitutional amount of Nd for Tb in NdTbFeCo film at the constant FeCo content. In spite of the increased ${\theta}_{k}$, a small coercivity of NdTbFeCo film made this medium unsuitable for magneto-optical recording medium at short wavelength. An effort was made to improve coercivity by exchange coupling with TbFeCo film of high coercivity. In the exchange-coupled $Nd_{16.9}Tb_{15.2}Fe_{50.4}Co_{17.5}(150\;{\AA})/Tb_{21.1}Fe_{65.0}Co_{13.9}(300\;{\AA})$ double-layered film, the magnetization reversal switching field and the Kerr rotation angle were increased to about 6.0 KOe and $0.32^{\circ}$ at 500 nm, respectively. This result indicates that exchange-coupled NdTbFeCo/TbFeCo film can be a promising candidate for agneta-optical rerding medium short wavelenhth.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• Membrane Journal
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• v.15 no.3
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• pp.198-205
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• 2005

Double-layered polymer films to assay the radioactive contamination were formulated using polysulfone (PSF) and cerium activated yttrium silicate (CAYS), consisting of a dense support layer and a CAYS-holding top layer prepared via the diffusion-induced phase inversion. As the vapor exposure process was omitted, the CAYS-holding layer showed a typical asymmetric structure, with CAYS being transfixed into the polymer network spread with large macropores. With the increase in vapor exposure time before immersion, morphology of the films transformed from asymmetric to sponge-like structures, with CAYS being localized in cellular structure. The border structure between the two layers reflects the phase inversion behavior of a cast solution during the coagulation. In the radioactive detection, the polymer phase in a film holding a sponge-like structure is so dense that the radionuclides, deposited on the film, could not filter through the phase, consequently resulting in the loss in the detection efficiency of the film.

• ETRI Journal
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• v.44 no.1
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• pp.147-154
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• 2022

We demonstrate a new double-layer structure for stretchable interconnects, where the top surface of a serpentine polyimide support is coated with a thin eutectic gallium-indium liquid metal layer. Because the liquid metal layer is constantly fixed on the solid serpentine body in this liquid-on-solid structure, the overall stretching is accomplished by widening the solid frame itself, with little variation in the total length and cross-sectional area of the current path. Therefore, we can achieve both invariant resistance and infinite fatigue life by combining the stretchable configuration of the underlying body with the freely deformable nature of the top liquid conductor. Further, we fabricated various types of double-layer interconnects as narrow as 10 ㎛ using the roll-painting and lift-off patterning technique based on conventional photolithography and quantitatively validated their beneficial properties. The new interconnecting structure is expected to be widely used in applications requiring high-performance and high-density stretchable circuits owing to its superior reliability and capability to be monolithically integrated with thin-film devices.

• International journal of advanced smart convergence
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• v.2 no.2
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• pp.16-18
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• 2013

In this paper, we develop a method to design a flexible thin film audio systems utilizing Polyvinylidene fluoride. The system we designed showed the properties of increased transparency and sound pressure levels. As an input terminal transparent oxide thin film is adopted. In order to provide dielectric insulation, a transparent insulating oxide thin film is coated to obtain double -layered structure. In the range of visible light, the output from the output of the system showed an increased and improved sound pressure level. The piezoelectric polymer film of polyvinylidene fluoride (PVDF) is used to produce mechanical vibration due to the applied electrical voltage signal. An analog electric voltage signal is transformed into sound waves in the audio system.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.44-47
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• 2004

Fabrication of barrier layer on PES substrate and plastic OLED device by atomic layer deposition are carried out. Simultaneous deposition of 30nm of $AlO_x$ film on both sides of PES gives film MOCON value of 0.0615g/$m^2$.day (@38$^{\circ}C$, 100% R.H). Introduction of conformal $AlO_x$ film by ALD resulted in enhanced barrier properties for inorganic double layered film including PECVO $SiN_x$. Preliminary life time to 91% of initial luminance (1300 cd/$m^2$ ) for 100nm of PECVD $SiN_x$/30nm of ALD $AlO_x$ coated plastic OLED device was 260 hours.