• Journal of the Korean Electrochemical Society
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• v.5 no.1
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• pp.1-6
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• 2002

Silver doped vanadium pentoxides with a doping ratio Ag/V ranging from 0.03 to 0.11 were synthesized by sol-gel process, and $Li/Ag_xV_2O_5$ cell was investigated by the electrochemical methods. It appears to be amorphous layered material and entangled fibrous textures has been grown to form anisotropic corrugated fibrils. NMR measurements revealed that several different kinds of $Li^+$ ions exist in the lithium intercalated xerogel electrodes and the average cell potential was about 3.0V vs. $Li/Li^+$. The cell capacity of the silver doped $Ag_xV_2O_5$ xerogel cathodes was more than 359 mAh/g at discharge current 10mA/g and cycle efficiency $94\%$ was achieved.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.856-862
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• 1997

박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.6
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• pp.3429-3434
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• 2014

In the TFT-LCD(Thin Film Transistor-Liquid Crystal Display) panel manufacturing industry, SAMSUNG, a late entry, can catch up to leading first mover, SHARP. The changes the note, monitor, TV, and mobile markets in the TFT-LCD industry were studied using a system analysis method. In addition, the fast response time technology in SAMSUNG TFT-LCD technology was developed using the TRIZ method. For example, a new liquid crystal mixture of a wide view angle and fast response time were developed by doping a new high birefringence liquid crystal material in a base mixture using the contradiction method and su-field method of TRIZ. The response time of a new liquid crystal mixture was improved to approximately 60%(16.2ms with base LC mixture, 9.8ms with a new LC mixture).

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.276-279
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• 2008

In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.336-345
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• 2020

Nickel-doped lanthanum cobalt oxide (LaCo_1-xNi_xO_3-δ, LCN) was investigated as an alternative anode material for solid oxide fuel cells. To improve its catalytic activity for steam methane reforming (SMR) reaction, Ni²⁺ was substituted into Co³⁺ lattice in LaCoO₃. LCN anode, synthesized using the Pechini method, reacts with yttria-stabilized zirconia (YSZ) electrolyte at high temperatures to form an electrochemically inactive phase such as La₂Zr₂O₇. To minimize the interlayer by-products, the LCN was coated via a double-tape casting method on the Ni/YSZ anode as a catalytic functional layer. By increasing the Ni doping amount, oxygen vacancies in the LCN increased and the cell performance improved. CH₄ fuel decomposed to H₂ and CO via SMR reaction in the LCN functional layer. Hence, the LCN-coated Ni/YSZ anode exhibited better cell performance than the Ni/YSZ anode under H₂ and CH₄ fuels. LCN with 12 mol% of Ni (LCN12)-modified Ni/YSZ anode showed excellent long-term stability under H₂ and CH₄ conditions.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.352-360
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• 2020

Lithium cobalt oxide (LiCoO₂, LCO) has been widely used as a cathode material for Li-ion batteries (LIBs) owing to its excellent electrochemical performance and highly reproducible synthesis even with mass production. To improve the energy density of the LIBs for their deployment in electro-mobility, the full capacity and voltage of the cathode materials need to exploited, especially by operating them at a higher voltage. Herein, we doped LCO with divalent calcium-ion (Ca²⁺) to stabilize its layered structure during the batteries' operation. The Ca-doped LCO was synthesized by two different routes, namely solid-state and co-precipitation methods, which led to different average particle sizes and levels of dopant's homogeneity. Of these two, the solid-state synthesis resulted in smaller particles with a better homogeneity of the dopant, which led to better electrochemical performance, specifically when operated at a high voltage of 4.5 V. Electrochemical simulations based on a single particle model provided theoretical corroboration for the positive effects of the reduced particle size on the higher rate capability.

• Composites Research
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• v.31 no.5
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• pp.282-287
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• 2018

In this paper, we explore interfacial properties of the mineralized CNTs when they are employed as reinforcing fillers in a polymer nanocomposite using molecular dynamics (MD) simulations. Recently, several studies on mineralizing carbon nanotubes (CNTs) with an aid of nitrogen doping to CNTs have been reported. However, there is a lack of studies on the reinforcing effects of the mineralized CNTs when it is employed as a filler of nanocomposites. Silica ($SiO_2$) is used as a mineral material and poly (methyl metacrylate) (PMMA) is used as a polymer matrix. Pull-out simulations are conducted to obtain the interfacial energy and the interfacial shear stress. It was found that the silica mineralized CNTs have higher interfacial interaction with the polymer matrix. In the future, by examining various thermomechanical properties of the mineralized-CNT-filler/polymer nanocomposites, we will search for potential applications of the novel reinforcing filler.

• Journal of IKEEE
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• v.24 no.2
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• pp.619-625
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• 2020

In this paper, we propose a TS-DMOSFET(Trench Shielded DMOSFET) structure in which P+ shielding region is formed in a deeper region than C-DMOSFET(Conventional DMOSFET) and S-DMOSFET(Shielded DMOSFET). Using TCAD simulation to compare the static characteristics of TS-DMOSFET with C- and S-DMOSFET. As for the structure proposed, the doping is followed by the source trench process. Despite the fact that it is a SiC material, this allows it to form a P+ shielding region in a deep area. Followed by completely suppressing the reach-through effect. As a result, when the breakdown voltage of the three structures is 3.3kV, the Ron of TS-DMOSFET is 9.7mΩ㎠. Thus, it is 68% and 54% smaller than the Ron of C-DMOSFET and S-DMOSFET respectively.