• Journal of Magnetics
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• 제18권3호
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• pp.240-244
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• 2013

The influences of Gallium doping on the magnetic microstructures and corrosion behaviors of Nd-Fe-B-Ti-C alloys are investigated. The cooling rate for obtaining fully amorphous structure is raised, and the glassforming ability is improved by the Ga addition. The High Resolution Transmission Electron Microscopy image shows that the ${\alpha}$-Fe and $Fe_3B$ soft magnetic phases become granular surrounded by the $Nd_2Fe_{14}B$ hard magnetic phase. The rms and $({\Delta}{\varphi})_{rms}$ value of Nd-Fe-B-Ti-C nanocomposite alloy thick ribbons in the typical topographic and magnetic force images detected by Magnetic Force Microscopy(MFM) decreases with 0.5 at% Ga addition. The corrosion resistances of $Nd_9Fe_{73}B_{12.6}C_{1.4}Ti_{4-x}Ga_x$ (x = 0, 0.5, 1) alloys are enhanced by the Ga addition. It can be attributed to the formation of more amorphous phases in the Ga doped samples.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.961-968
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• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• 한국세라믹학회지
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• 제48권4호
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• pp.298-302
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• 2011

This study developed a pigment by doping Cr to Pyrochlore-type stannate crystals and investigated the chromogenic relationship in a glaze. Crystal phases of the pigment according to firing temperatures were analyzed by XRD, and the doping relationship was analyzed by Raman Spectroscopy. Color and reflection rate of the pigment were measured by UV-vis Spectrophotometer. Consequently, stannate characteristic band appeared at 307, 408, 505 and $755cm^{-1}$ until 0.1 mole substitution of $Cr_2O_3$. However, as amount of $Cr_2O_3$ increased, the stannate characteristic peak was decreased and shift happened at the left hand side due to Cr-dope. In composition of 0.12~0.14 mole substituted, the unreacted $Cr_2O_3$ stannate characteristic peak, which was not engaged, was shown. This result shows the maximum limit of solid solution was 0.1 mole $Cr_2O_3$. The color of the glaze, which was produced by adding 6 wt% of $Y_2Sn_{1.94}Cr_{0.06}O_7$ pigment in a lime or a lime-magnesia glaze and fired the mixture at $1260^{\circ}C$, was grayish pink with $L^*$ 70.29, $a^*$ 5.68 and $b^*$ 6.27. It showed gray with $L^*$ 68.82, $a^*$ 3.07and $b^*$ 8.13 for $Y_2Sn_{1.9}Cr_{0.1}O_7$.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.625-628
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• 2002

The electrical properties of the praseodymium-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Dy oxides were investigated with $Dy_2O_3$ amount. The average grain size of varistor ceramics was greatly decreased from 18.2 to 4.6 pm with increasing $Dy_2O_3$ amount. The calculated nonlinear exponent$({\alpha})$ in varistor ceramics without $DY_2O_3$ was only 4.9, whereas the a value of the varistors with $DY_2O_3$ was abruptly increased in the range of 48.8 to 58.6. In particular, the maximum value of a was obtained by doping of 1.0 mol% $DY_2O_3$, reaching 58.6. The measured leakage current$(I_l)$ value in varistors without $DY_2O_3$ was $85.45{\mu}A$, whereas the $I_{\ell}$ value of the varistors with $DY_2O_3$ was very abruptly decreased in the range of 1.10 to $0.12{\mu}A$. In particular, the minimum value of $I_{\ell}$ was obtained by doping of 0.5 mol% $DY_2O_3$, reaching $0.12{\mu}A$. The tan $\delta$ varied in V-shape, with minimum 2.28% at 0.5 mol% $DY_2O_3$. The donor concentration and the density of interface states were decreased in the range of $(4.66{\sim}0.25){\times}10^{18}cm^3$ and $(5.70{\sim}1.39){\times}10^{12}/cm^2$, respectively, as $DY_2O_3$ amount is increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.11-11
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• 2006

ZnO는 넓은 밴드갭(3.37eV)과 큰 액시톤(exciton) 결합에너지(60meV)를 가지는 II-VI족 화합물 반도체이다[1]. 이와같은 특성은 상온에서도 높은 재결합 효율이 기대되는 엑시톤 전이가 가능하여 자발적인 발광특성 및 레이저 발진을 위한 낮은 임계전압을 가져 일광효율이 큰 장점이 있다. 최근에는 ZnO의 전기적, 광학적, 자기적 특성을 높이기 위해 doping에 대한 연구가 많이 보고 되고 있다. 이중 ZnO내에 Mg을 doping하게 되면 Mg 조성에 따라 밴드갭이 3.3~7.7eV까지 변하게 된다. 그러나 이원계 상평형도에 따라 ZnO내에 고용될 수 있는 MgO의 고용도는 4at% 이하이다. 이는 ZnO는 Wurtzite 구조이고, MgO는 rocksalt 구조로 각각 결정구조가 다르기 때문이다. 본 연구는 열기상증착방법(thermal evaporation)으로 ZnO 템플레이트를 이용하여 MgZnO 나노막대를 합성하였고, Zn와 Mg의 서로 다른 녹는점을 이용해 2-step으로 성장을 하였다. 합성은 수평로를 사용하였으며, 반응온도 550, $700^{\circ}C$로 2-step으로 하였으며, 소스로 사용된 Zn(99.99%)과 Mg(99.99%) 분말을 산소를 직접 반응시켜 합성하였다. Ar 가스와 O2 가스를 각각 운반가스와 반응가스로 사용하였다. ZnO 템플레이트 위에 성장시킨 1차원 MgZnO 나노구조의 형태 및 구조적 특성을 FESEM과 TEM으로 분석하였다. 그리고 결정학적 특성은 XRD를 이용해 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1023-1028
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• 2004

RF magnetron sputtering을 이용하여 증착한 투명전도성 ZnO 박막의 F 도핑량에 따른 전기, 구조, 광학적 특성에 대해 고찰하였다. 순수 ZnO와 ZnO : $ZnF_2$(1.3 wt%) 그리고 ZnO : $ZnF_2$(10 wt%) 3개의 타겟들을 2개씩 조합 각각의 rf 파워를 조절하여 co-sputtering 방법으로 $ZnF_2$ wt%를 변화시켜 박막내의 F 도핑량을 조절하였다. 증착된 박막들은 열처리에 따른 물성 변화를 분석하기 위해 $5{\times}10^{-7}$ torr 이하의 진공 분위기에서 $300^{\circ}C$에서 2 시간 동안 열처리하였다. XRD 분석 결과 제작된 모든 ZnO 박막은 (002) 우선 방위 특성을 보였고 F 도핑량 증가에 따라 (101), (110), (100) 방향의 약한 피크들이 나타났으며, 이러한 구조적 특성 변화는 이동도의 변화와 밀접한 관계가 있는 것으로 나타났다. Auger로 박막 내의 F 량을 분석한 결과 최대 5.9 at%의 F이 포함되어 있었으며, 열처리 후 캐리어 농도와 이동도는 증가하였고 최고 $37cm^2/Vs$의 이동도를 나타내었으며, 모든 박막들은 가시광 영역에서 81 % 이상의 투과도를 가졌다.

• 한국재료학회지
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• 제30권9호
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• pp.458-464
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• 2020

Zinc-ion hybrid supercapacitors (ZICs) have recently been spotlighted as energy storage devices due to their high energy and high power densities. However, despite these merits, ZICs face many challenges related to their cathode materials, activated carbon (AC). AC as a cathode material has restrictive electrical conductivity, which leads to low capacity and lifetime at high current densities. To overcome this demerit, a novel boron (B) doped AC is suggested herein with improved electrical conductivity thanks to B-doping effect. Especially, in order to optimize B-doped AC, amounts of precursors are regulated. The optimized B-doped AC electrode shows a good charge-transfer process and superior electrochemical performance, including high specific capacity of 157.4 mAh g^-1 at current density of 0.5 A g^-1, high-rate performance with 66.6 mAh g^-1 at a current density of 10 A g^-1, and remarkable, ultrafast cycling stability (90.7 % after 10,000 cycles at a current density of 5 A g^-1). The superior energy storage performance is attributed to the B-doping effect, which leads to an excellent charge-transfer process of the AC cathode. Thus, our strategy can provide a rational design for ultrafast cycling stability of next-generation supercapacitors in the near future.