Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Defects and Electrical Properties of ZnO-Bi2O3-Mn3O4-Co3O4 Varistor

ZnO-Bi2O3-Mn3O4-Co3O4 바리스터의 결함과 전기적 특성

  • Hong, Youn-Woo (Functional Module Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Young-Jin (Functional Module Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Sei-Ki (Functional Module Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Jin-Ho (School of Materials Science and Engineering, Kyungpook National University)
  • 홍연우 (한국세라믹기술원 기능성모듈팀) ;
  • 이영진 (한국세라믹기술원 기능성모듈팀) ;
  • 김세기 (한국세라믹기술원 기능성모듈팀) ;
  • 김진호 (경북대학교 신소재공학부)
  • Received : 2012.09.28
  • Accepted : 2012.11.19
  • Published : 2012.12.01
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Abstract

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

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