• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.22-25
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• 2001

A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.623-626
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• 2004

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.212-212
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• 2010

Recently, lithium transition metal phosphates with an ordered olivine-type structure, $LiMPO_4$ (M=Fe, Mn, Ni, and Co), have attracted extensive attention due to a high theoretical specific capacity (170 mAh/g). The $LiMPO_4$ is the most attractive because of its high stability, low cost, high compatibility with environment. However, it is difficult to attain its full capacity because its electronic conductivity is very low, and diffusion of Li-ion in the olivine structure is slow and the supervalue cation doping was used. In this research, we are used the supervalue cation doping methode such as Cu, Ti, and Mg were partially replace the Fe. The cycling performance resulted of the used $LiM_xFe_{1_x}PO_4$ cathode materials for lithium batteries exhibit excellent high capacity than $LiFePO_4$/Li cells.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.671-675
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• 2016

Skutterudite materials show PGEC (phonon glass electron crystal) characteristics which is an optimal strategy for designing high performance thermoelectric materials. Now two methods are in parallel to control thermal conductivity of skutterudites, a rattler-atoms doping method and a process for nanostructured bulk materials. Amount of rattler atoms in p-type skutterudite are depends on a Fe/Co ratio of matrix, and the optimal Fe/Co ratio has been reported about from 3:1 to 3.5:0.5 in $R(Fe,Co)_4Sb_{12}$ structure. In this paper, our discussion for rattler doping research was concentrated on double-rattler systems and DD-doped systems in p-type skutterudites. A melt spinning precess combined with high energy ball milling were suggested as a strategy for nanostructured bulk materials with PGEC (phonon glass electron crystal) characteristics in p-type skutterudites.

• The Journal of Advanced Prosthodontics
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• 제9권6호
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• pp.482-485
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• 2017

PURPOSE. This laboratory study aimed to investigate the effect of doping an acrylic denture base resin material with nanoparticles of ZnO, CaO, and $TiO_2$ on biofilm formation. MATERIALS AND METHODS. Standardized specimens of a commercially available cold-curing acrylic denture base resin material were doped with 0.1, 0.2, 0.4, or 0.8 wt% commercially available ZnO, CaO, and $TiO_2$ nanopowder. Energy dispersive X-ray spectroscopy (EDX) was used to identify the availability of the nanoparticles on the surface of the modified specimens. Surface roughness was determined by employing a profilometric approach; biofilm formation was simulated using a monospecies Candida albicans biofilm model and a multispecies biofilm model including C. albicans, Actinomyces naeslundii, and Streptococcus gordonii. Relative viable biomass was determined after 20 hours and 44 hours using a MTT-based approach. RESULTS. No statistically significant disparities were identified among the various materials regarding surface roughness and relative viable biomass. CONCLUSION. The results indicate that doping denture base resin materials with commercially available ZnO, CaO, or $TiO_2$ nanopowders do not inhibit biofilm formation on their surface. Further studies might address the impact of varying particle sizes as well as increasing the fraction of nanoparticles mixed into the acrylic resin matrix.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.155-160
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• 2020

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.79-82
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• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ + ywt% MgO (x=0.10, 0.15, 0.20, y=0.0~3.0) ceramics were fabricated by the conventional solid-state reaction, and their structural and dielectric properties were investigated with variation of composition ratio and MgO doping content. A second phase, representative of MgO, appears in 3wt% MgO-doped BSCT specimens. Average grain sizes decreased with increasing amounts of MgO, and the BSCT(40/40/20) specimens doped with 3wt% MgO showed a value of $9.3{\mu}m$. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing MgO doping content and Ca composition ratio. The relative dielectric constant was non-linearly decreased as the field strength is increased. The tunability was increased with decreasing a Ca content and the BSCT(50/40/10) specimen doped with 1.0wt% MgO content showed the highest value of 6.4% at 5kV/cm.

• 분석과학
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• 제13권6호
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• pp.705-711
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• 2000

리튬 이차전지용 부극 재료로 페놀 수지로 부터 유도된 boron을 doping한 polyacene에 구조적 특성, 표면 특성 및 전기적 특성을 연구하였다. Polyacene탄소질에 boron의 함유량을 각각 5%, 10%, 15%, 20% 첨가하여 특성화하였다. X-선 회절 결과에 따르면, 이들 시료들은 대표적인 무정형 탄소의 회절형태를 나타내었다. 표면 상태는 반구형의 표면상태를 가지고 있음을 SEM 결과로부터 알 수 있었다. 전지의 이온과 전자전달효과를 알아보기 위한 전기 화학적 충전/방전 특성과 임피던스 측정의 결과에 의하면, 10%와 15% boron이 첨가된 시료는 다소 우수한 특성을 나타내고 있다.