Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Low-frequency Noise Characteristics of Si0.8Ge0.2 pMOSFET Depending upon Channel Structures and Bias Conditions

채널구조와 바이어스 조건에 따른 Si0.8Ge0.2 pMOSFET의 저주파잡음 특성

  • 최상식 (전북대학교 반도체과학기술학과) ;
  • 양현덕 (전북대학교 반도체과학기술학과) ;
  • 김상훈 (전자통신연구원) ;
  • 송영주 (전자통신연구원) ;
  • 이내응 (성균관대학교 신소재공학과) ;
  • 송종인 (광주과학기술원 정보통신공학과) ;
  • 심규환 (전북대학교 반도체과학기술학과)
  • Published : 2006.01.01
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Abstract

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

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References

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