• 제목/요약/키워드: diode-connected

검색결과 145건 처리시간 0.024초

슈퍼커패시터를 이용한 무선센서노드의 전원에 관한 연구 (A Study of Power Source for Wireless Sensor Node Using Supercapacitors)

  • 김형표;김진규
    • 센서학회지
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    • 제21권5호
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    • pp.379-384
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    • 2012
  • This paper presents the power source of wireless sensor node (WSN) using supercapacitors and a solar cell. Supercapacitors have high lifetime cycling compared to that of batteries. Supercapacitors are connected in series to achieve higher voltage and a voltage balancing circuit is required to ensure that no individual cell goes overvoltage. We employ an active balancing circuit that draws minimal current by using transistors. A diode is connected in series with each supercapacitor. A new balancing circuit that equalize the cells-voltage reduces energy consumption of supercapacitors. Voltage of operating WSN is applied 2.2-3.3V by DC/DC converter and supercapacitor voltage 2.2-5.1V. Maximum operating time of wireless sensor node is about 16 hours in full charging.

The Improvement Effect of Input Current Waveform of Two New Main Switching Boost Rectifiers

  • Ha, Sung-Hyun;Kim, Chang-Il;Kim, Soo-Wook;Nam, Jing-Rak;Mun, Sang-Pil
    • 조명전기설비학회논문지
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    • 제22권3호
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    • pp.15-26
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    • 2008
  • This paper proposes a new sinusoidal rectifier which improves input factor and input current waveform without complicated switching modulation such as pulse width or a complicated feed back control. The proposed rectifier consists of a pair of capacitors connected in series, a full bridge diode rectifier, a pair of inductors, and a pair of switching devices connected in series. While the configuration of the sinusoidal rectifier is simple in itself, it effectively reduces the reactive power and harmonics involved(IEC555-2 SC77A90 Class C) in input line current. The excellent properties of the new sinusoidal rectifier are verified by theoretical analysis and experimental results.

A CMOS Complementary Bridge Rectifier for Driving RFID Transponder Chips

  • Park, Kwang-Min
    • Transactions on Electrical and Electronic Materials
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    • 제7권3호
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    • pp.103-107
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    • 2006
  • In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

단상 계통연계형 태양광 발전 시스템용 고효율 MOSFET 인버터 (Highly Efficient MOSFET Inverter for Single-Phase Grid-Connected Photovoltaic Power Generation Systems)

  • 류형민
    • 전력전자학회논문지
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    • 제19권3호
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    • pp.227-232
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    • 2014
  • A highly efficient MOSFET inverter for single-phase grid-connected photovoltaic power generation systems is presented in this paper. It is a full-MOSFET version of the conventional transformerless full-bridge inverter with dual L-C filters using unipolar PWM. The key idea lies on smart pre switching(SPS), which can make the large switching loss due to a poor reverse recovery of the MOSFET's body diode reduced dramatically. The validity of the proposed inverter is verified by experiment.

병렬형 전압원 능동필터의 성능개선 (Performance improvement of a voltage source active filter)

  • 강유리;김원호;임근희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 A
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    • pp.553-555
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    • 1994
  • Various nonlinear loads such as diode rectifiers, and phase controlled converters connected to at source cause harmonic pollutions in ac mains. Recently some filters have been proposed to minimize the potential problems. This study describes a method to improve the performances of a voltage source active filter. Two feedback loops are used in the scheme : one for reactive power compensation and the other for harmonic eliminations.

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APD용 TIA 회로의 안정성 개선을 위한 Quenching 저항 영향 분석 (Analysis of Quenching Resistor Effect to Improve Stability of TIA Circuit for APD)

  • 기동한;진유린;김성미;조성익
    • 전기전자학회논문지
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    • 제26권3호
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    • pp.373-379
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    • 2022
  • LTV(Light to Voltage) 변환을 위한 APD(Avalanche Photo Diode)는 다른 PD(Photo Diode)와 다르게 높은전압의 동작영역을 사용하므로 TIA(Transimpedance Amplifier) 사용시 과전류 방지를 위해 Quenching 저항을 직렬로 연결하여야 한다. 그러한 경우 Quenching 저항이 TIA 전달함수에 영향을 미쳐 안정도에 심각한 결과를 초래할 수 있다. 본 논문에서는 APD Quenching 저항이 TIA의 전압과 전류 루프 전달함수에 미치는 영향을 분석하여 안정도 개선을 위한 Quenching 저항 값 결정 방법을 제안하고자 한다. 제안된 방법에 의하여 Quenching 저항을 가지는 TIA 회로를 설계하여 시뮬레이션 및 칩 제작을 통하여 동작의 안정도를 검증하였다.

Design and Implementation of a New Multilevel DC-Link Three-phase Inverter

  • Masaoud, Ammar;Ping, Hew Wooi;Mekhilef, Saad;Taallah, Ayoub;Belkamel, Hamza
    • Journal of Power Electronics
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    • 제14권2호
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    • pp.292-301
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    • 2014
  • This paper presents a new configuration for a three-phase multilevel voltage source inverter. The main bridge is built from a classical three-phase two-level inverter and three bidirectional switches. A variable DC-link employing two unequal DC voltage supplies and four switches is connected to the main circuit in such a way that the proposed inverter produces four levels in the output voltage waveform. In order to obtain the desired switching gate signals, the fundamental frequency staircase modulation technique is successfully implemented. Furthermore, the proposed structure is extended and compared with other types of multilevel inverter topologies. The comparison shows that the proposed inverter requires a smaller number of power components. For a given number of voltage steps N, the proposed inverter requires N/2 DC voltage supplies and N+12 switches connected with N+7 gate driver circuits, while diode clamped or flying capacitor inverters require N-1 DC voltage supplies and 6(N-1) switches connected with 6(N-1) gate driver circuits. A prototype of the introduced configuration has been manufactured and the obtained simulation and experimental results ensure the feasibility of the proposed topology and the validity of the implemented modulation technique.

Controller Design of a Novel Power Conditioning System with an Energy Storage Device for Renewable Energy Sources under Grid-Connected Operation

  • Park, Sun-Jae;Lee, Hwa-Seok;Kim, Chan-In;Park, Joung-Hu;Jeon, Hee-Jong;Ryeom, Jeongduk
    • Journal of Power Electronics
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    • 제13권3호
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    • pp.390-399
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    • 2013
  • As a result of the depletion of fossil fuels and environmental contamination, it has become important to use renewable energy. For the stable utilization of renewable energy sources, energy storage devices must be used. In addition, renewable and distributed power sources with energy storage devices must operate stably under grid-connected mode. This paper proposed dynamic response modeling for renewable power generation systems including a charger/discharger with an energy storage device in order to derive a method to guarantee stable operation while fully utilizing the energy from the energy storage device. In this paper, the principle operation and design guidelines of the proposed scheme are presented, along with a performance analysis and simulation results using MATLAB and PSIM. Finally, a hardware prototype of a 1kW power conditioning system with an energy storage device has been implemented for experimental verification of the proposed converter system.

Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode

  • Han, Sang-Woo;Park, Sung-Hoon;Kim, Hyun-Seop;Lim, Jongtae;Cho, Chun-Hyung;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권2호
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    • pp.221-225
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    • 2016
  • This paper reports a new method to enable the normally-off operation of AlGaN/GaN heterojunction field-effect transistors (HFETs). A capacitor was connected to the gate input node of a normally-on AlGaN/GaN HFET with a Schottky gate where the Schottky gate acted as a clamping diode. The combination of the capacitor and Schottky gate functioned as a clamp circuit to downshift the input signal to enable the normally-off operation. The normally-off operation with a virtual threshold voltage of 5.3 V was successfully demonstrated with excellent dynamic switching characteristics.

결함접지구조(Defected Ground Structure)를 갖는 휴대 인터넷용 소형 고전력 SPDT PIN 다이오드 스위치 설계 (Design of Small-Size High-Power SPDT PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet Application)

  • 김동욱
    • 한국전자파학회논문지
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    • 제16권10호
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    • pp.1003-1009
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    • 2005
  • 본 논문에서는 결함접지구조(Defected Ground Structure: DGS)의 전파 지연 특성을 이용하여 소형으로 구현한 휴대 인터넷용 고전력 Single Pole Double Throw(SPDT) 스위치의 특성이 제공되며 1/4 파장 전송선을 이용하여 제작된 일반적인 방식의 스위치와 그 특성이 비교된다. DGS를 활용하여 제작된 스위치는 높은 격리도를 확보하기 위해 병렬구조의 다이오드를 사용하여 구성되었으며 2.3 GHz에서 0.8 dB의 삽입 손실과 50 dB 이상의 격리도 특성을 보였고 50 W 이상의 전력을 다룰 수 있었다. DGS를 활용한 스위치는 기존의 전송선 방식의 스위치와 거의 동일한 스위칭 특성을 보이면서도 $50\%$ 가까운 회로의 크기 감소를 달성할 수 있었다.