• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1340-1343
• /
• 2007

We have simultaneously fabricated LTPS TFTs and integrated photodiodes on the same glass substrates without any additional LTPS process. The structure of an integrated photodiode is a lateral p-i-n diode with a gate. The performances of a photodiode were improved at a negative gate voltage.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.10
• /
• pp.139-143
• /
• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.

• Proceedings of the Korea Air Pollution Research Association Conference
• /
• 2003.11a
• /
• pp.247-248
• /
• 2003

Tunable diode laser absorption spectroscopy (TDLAS) has been widely used in environmental monitoring of gaseous species in the past decade. TDLAS is a direct measurement technique for pollutants such as NOx without any interference from other species. Because of its superior spectral purity (～0.001 ­$cm^{-1}$), absorption linewidths with resolvable rotational structure can be studied in the mid infrared region where strong fundamental vibrational transitions of molecules appear. (omitted)

• Proceedings of the KIEE Conference
• /
• 1987.11a
• /
• pp.518-520
• /
• 1987

The semiconductor-metal-semiconductor structure is considered to be promising for high speed electronic devices. To realize this, the selective LPE and the proper design of epitaxial mask were adopted. Enhanced As diffusion made it possible to grow GaAs over W on GaAs. Buried W Schottky diode was fabricated and the rectifying I-Y characteristics were obtained.

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
• /
• pp.48-49
• /
• 2001

GaN는 wurzite structure를 갖는 wide bandgap III-V족 반도체로서, 청색 반도체 laser diode (LD), light emitting diode (LED)등으로 응용되는 물질이다. InGaN quantum well은 GaN계의 청색 LD, LED 구조에서 활성층으로 사용되기 때문에 이에 대한 광학적 연구가 활발하다. InGaN는 GaN위에 성장하면 strain에 의해 piezoelectric 효과가 크게 나타나는 것으로 알려져 있다. 이러한 piezoelectric potential에 의해 외부에서 voltage가 가해지지 않은 상황에서도 InGaN quantum well내의 electron, hole의 wave function이 비대칭 potential의 영향을 받게된다. (중략)

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.170-171
• /
• 2002

최근에 스핀트로닉스 주요 관심 소자의 하나인 자성체와 반도체 하이브리드형 쇼트키 장벽 다이오드 (Schottky Barrier Diode; SBD) 소자는 금속과 반도체간의 장벽전압에 의해 다수 전자가 이동하는 현상을 이용한 것으로서 과거에 신호 검파용으로 사용하던 금속 접촉 다이오드와 유사한 구조와 원리를 가진다. 내부 저항이 작고 동작속도가 빨라서 PC의 전원 장치와 같이 고속, 고효율을 요구하는 환경에 많이 사용된다. 쇼트키 장벽 소신호 다이오드와 쇼트키 장벽 정류기의 구분은 불분명하며 보통 0.5 A를 기준으로 구분한다. (중략)

• Korean Journal of Materials Research
• /
• v.25 no.1
• /
• pp.1-8
• /
• 2015

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.383-384
• /
• 2007

• Korean Journal of Optics and Photonics
• /
• v.27 no.6
• /
• pp.218-222
• /
• 2016

The thermal characteristics of a laser diode TO package has been analyzed using a commercial computational fluid dynamics (CFD) tool, and the thermal bypass structure was optimized. Comparison of device temperature and the estimated thermal resistance of the resultant structure showed that the bypass structure relieved the thermal bottleneck, and improved the thermal characteristics quite efficiently.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.85-88
• /
• 1998

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m$^2$ luminance are investigated in stable voltage and frequency.