한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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An integrated photodiode fabricated by low temperature poly-Si TFT process

  • Lee, Seung-Min (School of Electrical & Electronic Engineering, Yonsei University) ;
  • Kim, Dong-Lim (School of Electrical & Electronic Engineering, Yonsei University) ;
  • Jung, Tae-Hoon (School of Electrical & Electronic Engineering, Yonsei University) ;
  • Heo, Kon-Yi (School of Electrical & Electronic Engineering, Yonsei University) ;
  • Kim, Hyun-Jae (School of Electrical & Electronic Engineering, Yonsei University)
  • Published : 2007.08.27
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Abstract

We have simultaneously fabricated LTPS TFTs and integrated photodiodes on the same glass substrates without any additional LTPS process. The structure of an integrated photodiode is a lateral p-i-n diode with a gate. The performances of a photodiode were improved at a negative gate voltage.

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