한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Dynamic Stress Analysis of a Bottom Gate TFT Having an Active Layer of Amorphous/Microcrystalline Si Double-Layers

  • Pak, Sang-Hoon (School of Electrical & Electronic Engineering, Yonsei University) ;
  • Jeong, Tae-Hoon (School of Electrical & Electronic Engineering, Yonsei University) ;
  • Kim, Si-Joon (School of Electrical & Electronic Engineering, Yonsei University) ;
  • Kim, Hyun-Jae (School of Electrical & Electronic Engineering, Yonsei University)
  • Published : 2007.08.27
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Abstract

We have fabricated bottom gate TFTs with active layers of amorphous/microcrystalline Si double layers (DL). Dynamic electric stresses were applied to DL TFTs and a-Si TFTs to compare their degradation characteristics. The DL TFTs were more stable under dynamic stresses than a-Si TFTs.

Keywords