Study on the Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film as an Adhesion Layer

  • Hyung, Gun-Woo (Dept. of Materials Science and Engineering, Hongik University, Center for Organic Materials and Information Devices, Hongik University) ;
  • Park, Il-Houng (Dept. of Information Display, Hongik University, Center for Organic Materials and Information Devices, Hongik University) ;
  • Seo, Ji-Hoon (Dept. of Information Display, Hongik University, Center for Organic Materials and Information Devices, Hongik University) ;
  • Seo, Ji-Hyun (Dept. of Information Display, Hongik University, Center for Organic Materials and Information Devices, Hongik University) ;
  • Choi, Hak-Bum (Dept. of Information Display, Hongik University, Center for Organic Materials and Information Devices, Hongik University) ;
  • Kim, Young-Kwan (Dept. of Information Display, Hongik University, Center for Organic Materials and Information Devices, Hongik University)
  • Published : 2007.08.27

Abstract

We demonstrated that the threshold voltage shift owing to a gate-bias stress is originated from the trapped charges at the interface between semiconductor layer and dielectric layer, and such drawback can be settled by applying long-term delay time to the gate electrode.

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