• Journal of Pharmaceutical Investigation
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• v.37 no.6
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• pp.365-368
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• 2007

The primary aim of this study was to investigate the enhancement effect of low-frequency ultrasound on skin permeation. In vitro permeation experiments were performed using Franz modified diffusion cells with ketoprofen as model drug. The effect of various ultrasound factors-ultrasound application mode (continuous mode and discontinuous mode), ultrasound intensity (0.26 $W/cm^2$, and 0.29 $W/cm^2$) and duty cycle (3%, 16%, 50%, and 83%) were studied. The highest permeation was observed at 0.29 $W/cm^2$ intensity, 50% duty cycle, and discontinuous mode. The result suggested the feasibility of low frequency ultrasound application for the phonophoretic transdermal drug delivery system.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.379-381
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• 2009

The simulation model for metal-supported Solid Oxide Fuel Cell(SOFC) is developed in this study. Open circuit voltage is calculated using Nernst equation and Gibbs free energy is required by thermodynamic. The exchange current densities are compared with experimental results since exchange current density is most effective factor for the activation loss. Liu's study is used for the exchange current density of cathode, BSCF, and Koide's result is applied for the exchange current density of anode, Ni/YSZ. For the ohmic loss, ionic conductivity of YSZ is described from Kilner's mode and the data are compared with Wanzenberg's experimental data. Diffusivity is an important factor for the mass transfer through the porous medium. Both binary diffusion and Knudsen diffusion are considered as the diffusion mechanism. For validation, simulation results at this work are compared with our experimental results.

• Steel and Composite Structures
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• v.36 no.3
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• pp.249-259
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• 2020

In this work, a novel three-dimensional model in the generalized thermoelasticity for a homogeneous an isotropic medium was investigated with diffusion, under the effect of thermal loading due to laser pulse in the context of Green-Lindsay theory was investigated. The normal mode analysis technique is used to solve the resulting non-dimensional equations of the problem. Numerical results for the displacement, the thermal stress, the strain, the temperature, the mass concentration, and the chemical potential distributions are represented graphically to display the effect of the thermal loading due to laser pulse and the relaxation time on the resulting quantities. Comparisons are made within the theory in the presence and absence of laser pulse.

• Structural Engineering and Mechanics
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• v.75 no.2
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• pp.133-144
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• 2020

This investigation is to study the effect of gravitational field and diffusion on a microstretch thermoelastic medium heating by a non-Gaussian laser beam. The problem was studied in the context of the dual-phase-lag model. The normal mode analysis is used to solve the problem to obtain the exact expressions for the non-dimensional displacement components, the micro-rotation, the stresses, and the temperature distribution. The effect of time parameter, heat flux parameter and gravity response of three theories of thermoelasticity i.e. dual-phase-lag model (DPL), Lord and Shulman theory (L-S) and coupled theory (CT) on these quantities have been depicted graphically for a particular model.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1556-1557
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• 2007

LCD BLU에 광원의 수명을 측정하고, 고장모드를 분석하기 위해서는 광원을 구성하고 있는 각각의 성분 중에서 광원 자체를 구성하고 있는 R/G/B 광원에 대한 Burn-in test 및 고장모드를 분석하였다. LCD BLU에 있어서 R/G/B LED광원의 역할은 BLU 자체의 수명과 성능에 가장 큰 영향을 미친다. 서로 각각 사용조건하에서의 수명과 성능의 차이에 따라서 BLU 자체의 수명이 결정된다. 이를 평가가기 위해 LED device에 대한 가속수명테스트를 위한 Burn-in test를 실시하였으며, 발생한 고장모드를 분석하였다. 분석결과 누설전류 증가로 인한 불량이 주로 발생하였다. 누설전류 증가를 평가하기 위해 Photo emission microscope(PHEMOS-1000, MoDooTEK Inc.)을 이용하여 저전류에서의 LED chip의 누설전류에 의한 발광을 관찰함으로 인해, LED chip의 신뢰성 및 평가 기준이 됨을 알 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.97-99
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• 1998

A optical phase modulator of 5Gbps was fabricated on LiNbO$_3$ by Ti diffusion for optical communications. In this Paper the pigtailing, mode patterns and insertion loss were discussed. And the device Properties of driving voltage and bandwidth were measured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.903-910
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• 1998

Ti:LiNbO$_3$ optical waveguides have been fabricated by Ti-diffusion in wet oxygen atmosphere. The fabrication conditions of furnace temperature, diffusion time and bubbler temperature were 105$0^{\circ}C$, 8 hours and 9$0^{\circ}C$, respectively and Ti thickness was varied from 700$\AA$ to 1500$\AA$. In this paper, the nearfield patterns, mode sizes (hirizontal/vertical) and insertion loss of waveguides were discussed at wavelength 1550 nm ad function of Ti thickness. With the planar waveguide, the effective index change and diffusion depth were calculated at 632.8nm using the prism coupling method. From these results, the best Ti thickness in our conditions seems like to by 1200$\AA$~1300$\AA$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.9 s.252
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• pp.905-912
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• 2006

Experiments in low strain rate methane-air counterflow diffusion flames diluted with $CO_2$ have been conducted to investigate the flame extinction behavior and edge flame oscillation in which flame length is less than the burner diameter and thus lateral conductive heat loss in addition to radiative loss could be remarkable at low global strain rates. The critical mole fraction at flame extinction is examined in terms of velocity ratio and global strain rate. It is seen that flame length is closely relevant to lateral heat loss, and this sheets flame extinction and edge flame oscillation considerably. Lateral heat loss causes flame oscillation even at fuel Lewis number less than unity. Edge flame oscillations are categorized into three: a growing-, a harmonic- and a decaying-oscillation mode. Onset conditions of the edge flame oscillation and the relevant modes are examined with global strain rate and $CO_2$ mole fraction in fuel stream. A flame stability map based on the flame oscillation modes is also provided at low strain rate flames.