• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.267-269
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• 1996

In this work, the influence of wire type conducting particles on the insulation reliability of GIS has been systematically investigated when outer electrode was dielectric coated by epoxy resin. For this purpose, coaxial cylinder-type electrode was adopted in 362 kV chamber and various size of Cu conducting particle was used and different gas pressure was applied. To prove the coating effect on the gas insulation, different thickness of epoxy coated outer electrode have been considered and the lift-off voltage and flashover voltage have been analyzed. The results show that the dielectric coated electrode has an remarkable influence on the reducing particle behavior in GIS system and enhancing the GIS insulation reliability.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• 한국환경과학회지
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• 제20권5호
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• pp.623-630
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• 2011

This study investigated the degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the generation of OH radical) by using dielectric barrier discharge (DBD) plasma. The DBD plasma reactor of this study consisted of a quartz dielectric tube, titanium discharge (inner) and ground (outer) electrode. The effect of shape (rod, spring and pipe) of ground electrode, diameter (9~30 mm) of ground electrode of spring shape and inside diameter (4~13 mm) of quartz tube, electrode diameter (1~4 mm), electrode materials (SUS, Ti, iron, Cu and W), height difference of discharge and ground electrode (1~15.5 cm) and gas flow rate (1~7 L/min) were evaluated. The experimental results showed that shape of ground electrode and materials of ground and discharge electrode were not influenced the RNO degradation. The thinner the diameter of discharge and ground electrode, the higher RNO degradation rate observed. The effect of height gap of discharge between ground electrode on RNO degradation was not high within the experimented value. Among the experimented parameters, inside diameter of quartz tube and gas flow rate were most important parameters which are influenced the decomposition of RNO. Optimum inside diameter of quartz tube and gas flow rate were 7 mm and 4 L/min, respectively.

• 한국환경과학회지
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• 제23권6호
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• pp.1165-1173
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• 2014

For the field application of dielectric barrier discharge plasma reactor in nutrient solution culture, a filtration-DBD (dielectric barrier discharge) plasma reactor was investigated for the Ralstonia solanacearum which causes bacterial wilt in aquiculture. The filtration-DBD plasma reactor system of this study was consisted of filter, plasma reactor, reservoir. The DBD plasma reactor consisted of a quartz dielectric tube, discharge electrode (inner) and ground electrode (outer). The experimental results showed that the inactivation of R. solanacearum with filter media type in filter reactor ranked in the following order: anthracite > fiber ball > sand > ceramic ball > quartz ceramic. In filtration + plasma process, disinfection effect with the voltage was found to small. In disinfection time of 120 minutes, residual R. solanacearum concentration was 1.17 log (15 CFU/mL). When the continuous disinfection time was 120 minute, disinfection effect was thought to keep the four days. In sporadic operation mode of 30 minutes disinfection - 24 hours break, residual R. solanacearum concentration after five days was 0.3 log (2 CFU/mL). It is considered that most of R. solanacearum has been inactivated substantially.

• 한국통신학회논문지
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• 제21권12호
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• pp.3215-3226
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• 1996

In this paper a K-band harmonic oscillator competitive to ordinary Push-Push type oscillators is introduced. This oscillator is composed of two-X-band dielectric resonance circuits. To favor its harmonic generation, the load effect and the bias effect are studied to allow the maximum harmonic distortion. As results, the dielectric resonated load and the class A bias are used for the 2nd harmonic generation. analytical study for modelling of voltage controlled dielectric resonator is carried out with theoretical background. The performance of the circuit is evaluated by simulation using harmonic balanced method. The novel structure has ont only a voltage tuning circuit but also an output port at fundamental frequency as the function of prescaler for phase lockede loop application on the just single oscillation structure. In experimentation, the output freqneyc of the 2nd harmonic signal is 20.5GHz and the maximum power level of output is +5.5dBm without additional post amplifiers. the harmonic oscillator exhibits -30dBc of high fundamental frequency rejection without added extra filters. The phase noise of -90dBc/Hz at 100kHz off-carrier has been achieved under free running condition, that satisfies phase noise requirement of IESS 308. The proposed oscillator may be utilized as the clean and stable fixed local oscillator in Transmit Block Upconvertor(TBU) or Low oise Block downconvertor(LNB) for K/Ka-band digital communications and satellite broadcastings.

• 조명전기설비학회논문지
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• 제26권3호
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• pp.9-15
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• 2012

In this paper, we deal with a surface discharge that caused an aggravation of the dielectric strength in the $N_2/O_2$ mixture gas, When composit dielectrics were formed from the use of a solid dielectric. It was found from this study that the surface discharge voltage was deeply involved in the mixture ratio of $O_2$, the electrical property of the solid dielectric, kind of the solid dielectric, an electric field at the triple junction and a medium effect. These results expect basic data that will be used to transmission and distribution power system equipment using the $N_2/O_2$ mixture gas.

• ETRI Journal
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• 제33권6호
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• pp.887-896
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• 2011

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.

• 폴리머
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• 제38권6호
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• pp.726-734
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• 2014

Three different types of additives, thiokol, epoxidized natural rubber (ENR) and epoxidized linseed oil (ELO), were dispersed in an epoxy matrix before being used in glass fiber (GF) composites, and their effects on the mechanical and dielectric properties of epoxy resin and glass fiber reinforced epoxy composites (GF/EP) were examined. The addition of each of 7 phr ENR, 9 phr ELO and 5 phr thiokol into the epoxy resin increased the fracture toughness significantly by 56.9, 43.1, and 80.0%, respectively, compared to the unmodified resin. The mode I interlaminar fracture toughness of the GF/EP at propagation was also improved by 26.9, 18.3 and 32.7% when each of 7 phr ENR, 9 phr ELO, and 5 phr thiokol, respectively, was dispersed in the epoxy matrix. Scanning electron microscopy showed that the additives reduced crack growth in the GF/EP, whereas their dielectric measurements showed that all these additives had no additional effect on the real permittivity and loss factor of the GF/EP.

• 한국재료학회지
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• 제25권1호
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• pp.37-42
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• 2015

The effect of sintering temperature on the microstructure, electrical and dielectric properties of (V, Mn, Co, Dy, Bi)-codoped zinc oxide ceramics was investigated in this study. An increase in the sintering temperature increased the average grain size from 4.7 to $10.4{\mu}m$ and decreased the sintered density from 5.47 to $5.37g/cm^3$. As the sintering temperature increased, the breakdown field decreased greatly from 6027 to 1659 V/cm. The ceramics sintered at $900^{\circ}C$ were characterized by the highest nonlinear coefficient (36.2) and the lowest low leakage current density ($36.4{\mu}A/cm^2$). When the sintering temperature increased, the donor concentration of the semiconducting grain increased from $2.49{\times}10^{17}$ to $6.16{\times}10^{17}/cm^3$, and the density of interface state increased from $1.34{\times}10^{12}$ to $1.99{\times}10^{12}/cm^2$. The dielectric constant increased greatly from 412.3 to 1234.8 with increasing sintering temperature.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.187-199
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• 1994

In order to find an effect of structural changes due to variation of addition ratio of anhydride hardener and postcuring herat-treatments upon electrical properties of epoxy composites, the dielectric properties over a frequency range from 30[Hz] to l[MHz] were investigated in the temperature range of 20-180[.deg. C]. From the dielectric properties, the a peaks related with glass-transition phenomena of epoxy network appeared near 130[.deg. C], the conduction loss in high temperature region above 150[.deg. C] due to thermal dissociation of hardener started off with the low frequency side and the .betha. peak concerned with contribution of movable unreacted terminal epoxy groups and curing agents in the glass states concurred with the high-frequency side below 20[.deg. C]. And an effect of an hydride hardener upon structural changes and of postcuring heat treatments upon structural stability in epoxy composites would be explained through the estimation of the distribution of relaxation times and the activation energy for a .alpha. peak according to the WLF equations.