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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors

  • Baeg, Kang-Jun (Convergence Components and Materials Research Laboratory, ETRI) ;
  • Khim, Dong-Yoon (Heeger Center for Adv. Mater., Gwangju Institute of Science and Technology) ;
  • Jung, Soon-Won (Convergence Components and Materials Research Laboratory, ETRI) ;
  • Koo, Jae-Bon (Convergence Components and Materials Research Laboratory, ETRI) ;
  • You, In-Kyu (Convergence Components and Materials Research Laboratory, ETRI) ;
  • Nah, Yoon-Chae (School of Energy Materials Chemical Engineering, Korea University of Technology and Education) ;
  • Kim, Dong-Yu (Heeger Center for Adv. Mater., Gwangju Institute of Science and Technology) ;
  • Noh, Yong-Young (Department of Chemical Engineering, Hanbat National University)
  • Received : 2011.05.23
  • Accepted : 2011.09.06
  • Published : 2011.12.31
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Abstract

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.

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