• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.367-368
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• 2016

10kV IGCT has been recently developed and has the potential to push wind turbine systems to higher power and voltage rating. Converters employing IGCTs need snubber and OVP circuit to limit the rate of current's rising and peak over voltage across IGCT during turn on and off state, respectively. The conventional RCD snubber which is used in such power converter dissipates a significant amount of power. In order to reduce the amount of energy lost by conventional RCD snubber, this paper proposes flyback type snubber comprising two coils wound on a magnetic core. The flyback snubber not only meets all of the IGCTs characteristics during on and off-state but also significantly saves the power loss. Modern magnetic model using permeance-capacitance analogy leads to more accurate loss analysis of flyback type di/dt snubber circuit in 3-level NPC type back-to-back VSC. In turns, the comparison between conventional and flyback type snubber yield the effectiveness of proposed snubber in wind turbine systems.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.54 no.1
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• pp.26-32
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• 2005

Rotor position information is essential in the operation of the switched reluctance motor(SRM) drive for generation the phase current switching signals. When an incremental encoder is used as a rotor position sensor, the initial rotor position can not be detected. Some sensorless rotor position estimation methods also have the same problem. In these systems, to initially align the rotor, the forced alignment method has a delay and reverse rotation before the motor can start. Therefore it can not be acceptable for unidirectional drive systems. So the forced alignment method is not desirable in all drive systems and the research on the SRM drives should be directed to a system without rotor alignment. In this paper, a new detection method of initial rotor position using the rate of change of current is suggested. Firstly, di/dt versus θ/sub R/ reference table, which is the relation between the rate of change of current and rotor position, is generated and then the squared Euclidean distance method is used to estimate the rotor position based on the table. The simulated and experimental results are presented demonstrating the feasibility and accuracy of this method.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.6
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• pp.49-57
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• 2001

This paper analyzed PFC of active clamp ZVS flybark converter by adding two method PFC (Power Factor Correction) circuit-two-stage and single-stage. The addition of active clamp circuit also provide a mechanism fur achieving ZVS of both the primary and auxiliary switches. ZVS also limits the turn off di/dt of the output rectifier, reducing rectifier switching loss and switching noise, due to diode reverse recovery. As a results, the proposed converters have characteristics of the reduced switching noise and high efficiency in comparison to conventional flyback converter. The simulation and experimental results show that the proposed converters improve the input PF of 300[W] ZVS flyback converter by adding single-stage two-stage PFC circuit.

• JOURNAL OF ELECTRICAL WORLD
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• s.277
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• pp.63-68
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• 2000

요 몇 해 사이에 고내압$\cdot$대용량 파워디바이스에서는 아주 새로운 진전이 일어나고 있다. 파워일렉트로닉스 장치의 소형화$\cdot$고효율화 및 제어의 고속화 등의 요구에 응할 수 있는 차세대의 새로운 소자가 출현하여 그 제품화가 비약적으로 진전되고 있는 것이다. 새로운 파워디바이스의 대표적인 것으로는 다음의 3가지를 들 수 있다. $\cdot$HVIGBT(High Voltage Insulated Gate Bipolar Transistor Module)$\cdot$HVIPM(High Voltage Intelligent Power Module)$\cdot$GCT(Gate Commutated Turn-off)사이리스터 이들의 파워디바이스를 종래의 GTO(Gate Turn-off) 사이리스터와 비교해 보면 다음과 같은 특징이 있다.(1)GTO 사이리스터가 필요로 했던 스나버회로가 없어도(Snabber-less)턴오프가 가능하며, di/dt 억제용 아노드리액터의 생략 또는 저감이 가능하기 때문에 반도체 부녀회로의 소형화를 기할 수 있다. (2)게이트파워와 전체손실(소자 및 주변회로를 포함)의 저감으로 에너지 절약을 도모할 수 있다. (3)스위칭주파수를 2$\~$3kHz 정도까지 높일 수 있다. 이런 장점 때문에 다음과 같은 용도에의 적용이 기대되고 있다. (1)신간선, 지하철 등의 전철 응용 (2)액티브필터, SVG(무효전력발생장치), SVC(무효전력보상장치) BTB, 가변속 양수발전 스위치 등의 전력응용 (3) 철강압연이나 제지공장용 등의 대용량공업용 컨버터$\cdot$인버터 응용 HVIGBT와 HVIPM은 전철분야에서 신간선의 추진용 컨버터$\cdot$인버터장치와 보조전원장치, 그리고 지하철의 추진용 인버터 장치나 보조전원장치 등에 채용되고 GCT 사이리스터는 전력용 주파수변환기 등에 실용화되고 있다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.109-115
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• 2004

This paper deals with the behaviors of magnetic flux density near down-conductors by lightning currents. The background on the principle of magnetic flux density measurements using the RL self-integrating magnetic field sensor was described. The magnetic flux density measuring device consisting of RL self-integrating magnetic field sensor and differential amplifier was designed and fabricated. The frequency bandwidth of the magnetic flux density measuring system ranges from 200 Hz to 300 KHz and the response sensitivity was 0.126 $\mu$T/㎷ The distributions of the magnetic flux density near down-conductors due to impulse currents with various rise times were analyzed as a parameter of the bonding conditions and materials of conductor and wiring conduits. The magnetic flux density due to impulse currents was inversely proportional to the distance between the down-conductor and measuring point. The amplitude of the magnetic flux density for PVC Pipe with down-conductor was 72 $\mu$T/㎷ at the distance of 1m and was higher than for steel conduits and coaxial cable. Finally the magnetic flux density is increased with increasing the di/dt it and oscillation frequency of lightning currents in this experimental ranges.

• JOURNAL OF ELECTRICAL WORLD
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• s.323
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• pp.69-75
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• 2003

불투명한 경제정세의 와중에서도 전기에너지를 지탱하는 근간이 되는 파워 일렉트로닉스 분야는 확실히 그 기술개발을 향상시켜 오고 있다. 특히 파워디바이스는, 지구환경과 생활환경을 보다 쾌적하게 하기 위하여 인버터 장치 등의 각종 전력절약기기와 풍력$\cdot$태양광$\cdot$연료전지 등 클린에너지의 전력제어장치에 없어서는 안되는 반도체디바이스로 성장했다. 파워디바이스 중에서도 IGBT(Insulated Gate Bipolar Transistor)의 기술혁신은 요 20년 사이에 비약적인 성과를 거두었다. 1980년대에 제품화된 IGBT는, 반도체메모리의 초미세가공기술을 도입하면서 $5{\mu}m$에서 서브미크론의 디자인툴로 발전하여, 2000년대에 들어 칩의 전류밀도는 약 2배, 포화전압은 약 $65\%$까지 개량되었다. 이와 같은 IGBT의 변천은, 전력손실을 대폭적으로 저감시켜 에너지절약기기의 전력변환효율 향상에 공헌하고 있다. 파워디바이스의 기술진보에서 또 한 가지 잊지 말아야 할 것은 주변회로의 집적화(集積化)에 의한 고성능$\cdot$고기능화이다. 최근의 인버터용 파워디바이스로 가장 많이 사용되고 있는 파워모듈은, IGBT등의 파워칩과 그 주변회로와의 컬래버레이션에 의한 제품이다. 다시 말하면 구동회로, 전류$\cdot$전압$\cdot$온도센서 및 그것들의 보호회로가 IC(집적회로)에 편입되어 고기능$\cdot$소형화를 촉진시키고 있다. 구동회로는 LVIC (저전압집적회로)에서 HVIC(고전압집적회로)로 발전하여 전류$\cdot$온도 등의 각종 센서도 동일 칩에 설계할 수 있게 되었다. 또 센싱이나 보호기능뿐만이 아니라 출력전류의 제어를 위한 연산기능과 di/dt의 제어기능이 내장되도록 되어 있어 보다. 고성능의 인텔리전트 파워모듈(IPM)이라고 불리우는 새로운 개념의 파워디바이스가 실현되었다. 또한 패키지 기술도 내부배선 인덕턴스의 저감과 트랜스퍼 몰드패키지의 개발로, 소형화뿐만이 아니라 파워칩의 성능$\cdot$기능을 충분히 발휘할 수 있도록 개발이 적극적으로 추진되고 있다.

• The Transactions of the Korean Institute of Power Electronics
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• v.7 no.4
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• pp.332-338
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• 2002

High current coil power supply for superconductivity coil of tokamak requires fast dynamics performance of di/dt and smooth change over of current direction. To meet the specification high performance DSP-based controller Is designed for 12-pulse thyristor dual converter with interphase transformer(IPT). Not only the total current of Y and $\Delta$ converter units but also the difference for those should be regulated fast and accurately. Proportional and integral controller is designed for current difference control and the controller output is compensated to $\Delta$ converter. The source voltage phase angle detection and gate pulse generation algorithm are implemented in software for higher reliability of current control. The current error Is reduced by selection of appropriate initial gating angle during the transient of change over of current direction between thyristor converters.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1553-1558
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• 2009

A series of Eu(III) complexes with various neutral ligands (2,2’:6’,2"-terpyridine (T), diglyme (D), 1N-(2-dimethylamino) ethyl)-1N, 2N, 2N-trimethylethane-1,2-diamine (PT), di-(2-picolyl)-amine derivative (HT), and multidentate terpyridine derivative (DT)) were synthesized to investigate the effect of coordination environment on the sensitized luminescence of Eu(III) complexes. The nine coordination sites of the $Eu^{3+}$ ion are occupied by three bidentate carboxylate moieties and one neutral ligand. The highest emission intensity is obtained for $Eu^{3+}$- $[NA]_3$ (PT), due to the difference in energy transfer efficiency and symmetry of the first coordination sphere of $Eu^{3+}$ ion. But, the lowest emission intensity is obtained for $Eu^{3+}$-$[NA]_3$(T). Terpyridine may not play an important role antenna for photosensitizing $Eu^{3+}$ ion. It could be attributed to the weak spectral overlap integral J value between its phosphorescence band and $Eu^{3+}$ion absorption band. Therefore, different coordination environment of $Ln^{3+}$ ion play an important role in providing sensitization of lanthanide ion emission.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.3
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• pp.214-221
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• 2021

SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.