• 반도체디스플레이기술학회지
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• 제13권2호
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• pp.53-56
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• 2014

In this work, we investigate the operational properties of this proposed device in detail via classical MD simulations. The bi-stability of the GNF(Graphene Nano-flake) shuttle encapsulated in bi-layer GNR could be achieved from the increase of the attractive energy between the GNRs when the GNF approached the edges of the GNRs. This result showed the potential application of the nano-electromechanical GNR memory as a NVRAM.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(4)
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• pp.171-174
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• 2002

This paper presents an implementation method of phasor measurement device, which is based on the FPGA implementation of the sliding-DFT The design is verified by the timing simulation of its operation. The error effect of coefficient approximation and frequency deviation in the recursive implementation of the sliding-DFT is analytically derived and verified with the computer simulations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.325-327
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• 1997

TFT2DS was developed to provide the usability as an analytic and design tool. The static characteristics of a-Si TFTs demonstrated a good agreement between simulated and measured data. This paper shows that WDS can optimize the physical parameters of a-Si through sensitivity simulations and compute the static characteristics of a-Si TFTs.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1724-1728
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• 2014

Heat sink has been used to help an electrical device operate in normal temperature condition. But heat sink radiates unwanted electromagnetic wave, which may cause electromagnetic interference problem. A resistance loaded grounding technique is proposed to reduce electromagnetic wave radiation by a heat sink. Numerical simulations are accomplished to find optimal loading resistance. Also electromagnetic fields radiated by from a heat sink are measured and compared with the simulation results. The test results verify the usefulness of the proposed technique.

• Journal of information and communication convergence engineering
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• 제4권3호
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• pp.108-110
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• 2006

Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

• 한국컴퓨터산업학회논문지
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• 제6권2호
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• pp.345-354
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• 2005

그리드 사용자에게 시간과 장소에 상관없이 그리드 서비스를 이용할 수 있게 해주는 기술이 모바일 그리드이다. 이동환경에서 그리드 서비스를 제공하기 위해서는 단말기 배터리의 성능 및 이동성의 고려 등 여러 가지 제약사항이 따르며, 유선망에서의 그리드 기술을 이동 환경에 적용하기에는 많은 어려움이 있다. 따라서 본 논문에서는 모바일 그리드 서비스를 제공하기 위한 모바일 그리드 구조를 Ad-hoc 네트워크를 이용하여 설계를 하였으며, NS-2(Network Simulator)를 이용한 시뮬레이션을 통한 세 가지 방법의 라우팅 프로토콜의 지연시간에 대한 측정 및 이동 단말기 배터리의 성능을 고려한 비교를 통해, hybrid 방식의 라우팅 프로토콜이 효율적임을 제시하였다. 향후 모바일 그리드 서비스를 제공하기 위한 자원 할당 및 신뢰성 확보 방안에 대한 연구를 수행할 예정이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.959_960
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• 2009

Worldwide problem, due to the depletion of energy to power more efficient use of the same capacity to improvise for the use of LED brightness is growing. Recent advances in LED technology have lead to LEDs' widespread use in outdoor-signal applications, such as in traffic and railroad signals. Likewise, for large system design and production of issues leading to the simulation should be performed with less effort than to create a system that is reliable. In this paper a wide field of use to more accurately simulate a LED, and easy to use PSPICE can be used as general-purpose use of the LED device modeling. According to a particular LED, the device easy to use basic input variables to the values of library. In order to determine the behavior of the library to provide basic diode device, compared with PSPICE simulations confirm the accuracy of the simulation was performed.

• 로봇학회논문지
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• 제12권2호
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• pp.194-205
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• 2017

A redundantly actuated planar 3-degree-of-freedom parallel mechanism is analyzed to show its high application potential as a haptic device. Its structure along with the closed form forward position solutions is briefly discussed. Then its geometric and kinematic characteristics via singularity analysis, the kinematic isotropy index, and the input-output force transmission ratio are investigated both for the redundantly actuated cases and for the non-redundantly actuated case. In addition, comparative joint torque simulations of the mechanism with different number of redundant actuations as well as without redundant actuation are conducted to confirm the improved joint torque distribution characteristics. Through these analyses it is shown that the geometric and kinematic characteristics of the redundantly actuated mechanism are superior to the ones of the mechanism without redundant actuation. Thus, it can be concluded that the suggested planar mechanism with redundant actuation has a very high potential for haptic device applications.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.259-266
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• 2004

In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.

• 한국시뮬레이션학회논문지
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• 제4권2호
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.