• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.63-73
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• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• 전기전자학회논문지
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• 제25권4호
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• pp.735-740
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• 2021

본 논문에서는 기존의 LTDDSCR의 구조를 개선하여 기생 NPN BJT의 낮은 전류이득으로 높은 홀딩전압을 갖는 새로운 ESD 보호 소자를 제안한다. 제안된 보호 소자는 Synopsys사의 TCAD simulation을 이용하여 HBM simulation으로 전기적 특성을 분석하였고 current flow와 impact ionization 및 recombination Simulation으로 추가된 BJT가 동작하는 것을 확인하였다. 또한, 설계변수 D1, D2로 홀딩전압 특성을 최적화하였다. Simulation 수행결과, 새로운 ESD 보호 소자는 기존의 LTDDSCR과 비교하여 높은 홀딩전압을 갖는 것이 검증되었고 대칭적인 양방향 특성을 갖는 것이 확인되었다. 따라서 제안된 ESD 보호 소자는 IC에 적용될시 높은 면적 효율성을 가지며 IC의 신뢰성을 향상시킬 것으로 기대된다.

• 한국HCI학회:학술대회논문집
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• 한국HCI학회 2009년도 학술대회
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• pp.463-468
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• 2009

본 논문은 데스크탑 PC 에서만 구현 가능하였던 기존의 유체 시뮬레이션 기술을 모바일 환경으로 확장하는 방법론을 제시한다. 유체 시뮬레이션은 나비어-스토크스 (Navier-Stokes) 방정식의 수치적 해를 구하는 것이며, 기존의 방법론은 수치적 해의 안정성과 [1] 사실성 [2]에 그 초점을 맞추고 있다. 하지만 이는 모바일 기기에서 기대하기 힘든 충분한 연산 자원을 가정한 것이다. 한편, 모바일 환경에서의 물리기반 기술은 현재 강체 시뮬레이션 모듈이 주로 활용되고 있으며 [3], 유체 시뮬레이션은 높이장 (Height field) 기반의 단순한 모델만이 제시되어있다 [4]. 이를 극복하기 위해 본 연구에서는 이러한 한계를 극복한 수정된 비압축유동의 시뮬레이션 기법을 소개하며, 또한 모바일 상에서 유체의 가시화 기술을 제안한다.

• 한국시뮬레이션학회:학술대회논문집
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• 한국시뮬레이션학회 2001년도 The Seoul International Simulation Conference
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• pp.269-273
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• 2001

Semiconductor wafer fabrication is a business of high capital investment and fast changing nature. To be competitive, the production in a fab needs to be effectively planned and scheduled starting from the ramping up phase, so that the business goals such as on-time delivery, high output volume and effective use of capital intensive equipment can be achieved. In this paper, we propose Stand Alone layout and In-Line layout are analyzed and compared while varying number of device variable changes. The comparison is performed through simulation using ProSys; a window 98 based discrete system simulation software, as a tool for comparing performance of two proposed layouts. The comparison demonstrates that when the number of device variable change is small, In-Line layout is more efficient in terms of production quantity. However, as the number of device variable change is more than 14 titles, Stand Alone layout prevails over In-Line layout.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.32-35
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• 2003

Nonlinear parameterization of OLED device from measurements of bias dependence of impedance spectra and parameter extraction using Levenberg-Marquardt complex nonlinear least square regression algorithm based on resistor-capacitor equivalent circuit model enables computer simulation of OLED power driving characteristics in forms of square-wave or sinusoidal output signal at arbitrary conditions. We introduce developed OLED power driving simulation software and discuss transient responses in voltage-or current-controlled operations as well as nonlinear characteristics of OLED, by presenting both the simulation and experimental results. This OLED simulation technique using impedance spectroscopy is extremely useful in predicting performance of the nonlinear device, especially in time-domain analysis of device operation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2007년도 학술대회
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• pp.247-250
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• 2007

There are three main kinds of service standards for 3G(Third-Generation) wireless communication as WCDMA, CDMA2000 and TD-SCDMA(Time Division-Synchronous Code Division Multiple Access). Compare with WCDMA and CDMA2000, TD-SCDMA system has distinguished technical characters. It is a TDD(Time Division Duplexing) based technology and deploys several advanced but in some respects complex technologies such as smart antenna, joint-detection and baton-handoff, etc. Therefore to analyze and design TD-SCDMA wireless network, it needs more efficient and systematic simulation tool. General simulation tool has so many analysis functions including path loss prediction, capacity and coverage analysis. For more suitable for TD-SCDMA, new additional technologies have to be implemented in simulation tool. Especially as the wireless network highly advancing focused on data service, it more needs to research and develop on the reliability of the simulation tool. In this paper, to give the concrete process and skill about how to implement TD-SCDMA simulation tool, we define the kinds of simulation tool and list basic analysis functions available for TD-SCDMA network design at first. And then we explain how to consider the effects of new technologies of TD-SCDMA and give the solutions about theses considerations.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.204-209
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• 2016

The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

• 한국CDE학회논문집
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• 제18권1호
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• pp.21-27
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• 2013

Presented in the paper is a log data based modeling method for effective construction of a virtual plant model which can be used for the virtual PLC (Programmable Logic Controller) simulation. For the PLC simulation, the corresponding virtual plant, consisting of virtual devices, is required to interact with the input and output symbols of a PLC. In other words, the behavior of a virtual device should be the same as that of the real device. Conventionally, the DEVS (Discrete Event Systems Specifications) formalism has been used to represent the behavior a virtual device. The modeling using DEVS formalism, however, requires in-depth knowledge in the simulation area, as well as the significant amount of time and efforts. One of the key ideas of the proposed method is to generate a plant model based on the log data obtained from the production system. The proposed method is very intuitive, and it can be used to generate the full behavior model of a virtual device. The proposed approach was applied to an AGV (Automated Guided Vehicle).