• 제목/요약/키워드: device performance parameters

검색결과 420건 처리시간 0.023초

무작위 생성 심층신경망 기반 유기발광다이오드 흑점 성장가속 전산모사를 통한 소자 변수 추출 (Extraction of the OLED Device Parameter based on Randomly Generated Monte Carlo Simulation with Deep Learning)

  • 유승열;박일후;김규태
    • 반도체디스플레이기술학회지
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    • 제20권3호
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    • pp.131-135
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    • 2021
  • Numbers of studies related to optimization of design of organic light emitting diodes(OLED) through machine learning are increasing. We propose the generative method of the image to assess the performance of the device combining with machine learning technique. Principle parameter regarding dark spot growth mechanism of the OLED can be the key factor to determine the long-time performance. Captured images from actual device and randomly generated images at specific time and initial pinhole state are fed into the deep neural network system. The simulation reinforced by the machine learning technique can predict the device parameters accurately and faster. Similarly, the inverse design using multiple layer perceptron(MLP) system can infer the initial degradation factors at manufacturing with given device parameter to feedback the design of manufacturing process.

칩마운터의 진동 해석 및 실험 분석 (Vibration Analysis and Experiments of a Chip Mounting Device)

  • 고병식;이승엽
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 춘계학술대회논문집
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    • pp.1039-1042
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    • 2002
  • SMD(Surface Mounting Device) which mounts electronic components as IC-Chips on PCB automatically, produces a large dynamic force and vibration. The unwanted vibrations in SMD degrade the performance of the precision device and it is the major obstacle to limit its speed for mounting. This study investigated the vibration analysis of a typical SMD to predict the natural frequencies and mode shapes. To validate the finite element analysis of SMD, the FE result was compared with that of ODS measurements. It was shown that the predicted results were well correlated with the experimental modal parameters.

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화물수송용 철도차량 현가장치의 설계변수와 진동성능에 관한 연구 (A study on the design parameters and vibration performance of suspension device for freight car)

  • 함영삼;오택열
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집B
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    • pp.507-512
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    • 2001
  • As needs for substitution of excessive road-oriented transport by the railroad increase, we proposed the guideline for development of the high speed freight car up to 150km/h through analyzing the critical speed of welded-type freight car employed and investigating the improvement in its maintenance. This study, the proper design parameters of conical rubber spring was determined to meet the vibration performance.

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차량의 선회성능에 미치는 현가장치 설계인자의 영향에 관한 연구 (A Study on the Effects of Suspension Design Parameters on Cornering Performances of a Vehicle)

  • 이장무;윤중락;강주석;정종혁;탁태오
    • 한국자동차공학회논문집
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    • 제4권4호
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    • pp.27-37
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    • 1996
  • In this paper the effects of suspension design parameters on the steady-state cornering performance of vehicles are studied. To investigate the understeer characteristics of vehicles, steady-state cornering equatons are derived from a two-track model which is expanded from a simple one track model. The effects of the suspension design parameters as well as those of lateral load transfer are taken into consideration. To verify the equation, a skid pad test was carried out with a domestic passenger car. The design parameters of the vehicle are measured using a Suspension Parameter Measuring Device(SPMD). Based on these results, parameter studies are carried out to determine the effect of design parameters on the cornering performance of a vehicle, both in low and high acceleration region.

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단말간 직접 통신 네트워크를 위한 심층 강화학습 기반 분산적 스케쥴링 알고리즘 (A Distributed Scheduling Algorithm based on Deep Reinforcement Learning for Device-to-Device communication networks)

  • 정무웅;김륜우;반태원
    • 한국정보통신학회논문지
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    • 제24권11호
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    • pp.1500-1506
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    • 2020
  • 본 논문에서는 오버레이 단말 간 직접 (Device-to-Device : D2D) 통신 네트워크를 위한 강화학습 기반 스케쥴링 문제를 연구한다. 강화학습 모델 중 하나인 Q-learning을 이용한 D2D 통신 기술들이 연구되었지만, Q-learning은 상태와 행동의 개수가 증가함에 따라서 높은 복잡도를 유발한다. 이러한 문제를 해결하기 위하여 Deep Q Network (DQN) 기반 D2D 통신 기술들이 연구되었다. 본 논문에서는 무선 통신 시스템 특성을 고려한 DQN 모델을 디자인하고, 피드백 및 시그널링 오버헤드를 줄일 수 있는 DQN 기반 분산적 스케쥴링 방식을 제안한다. 제안 방식은 중앙집중식으로 변수들을 학습시키고, 최종 학습된 파라미터를 모든 단말들에게 전달한다. 모든 단말들은 최종 학습된 파라미터를 이용하여 각자의 행동을 개별적으로 결정한다. 제안 방식의 성능을 컴퓨터 시뮬레이션을 통하여 분석하고, 최적방식, 기회주의적 선택 방식, 전체 전송 방식과 비교한다.

Investigating the effect of changing parameters in the IEC device in comparative study

  • H. Ghammas;M.N. Nasrabadi
    • Nuclear Engineering and Technology
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    • 제56권1호
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    • pp.292-300
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    • 2024
  • Kinetic simulations have been performed on an Inertial Electrostatic Confinement Fusion (IECF) device. These simulations were performed using the particle-in-cell (PIC) method to analyze the behavior of ions in an IEC device and the effects of some parameters on the Confinement Time (CT). CT is an essential factor that significantly contributes to the IEC's performance as a nuclear fusion device. Using the PIC method, the geometry of a two-grided device with variable grid radius, the number of cathode grid rings, variable pressure and different dielectric thickness for the feed stalk was simulated. In this research, with the development of previous works, the interaction of particles was simulated and compared with previous results. The simulation results are in good agreement with the previous results. In these simulations, it was found that with the increase of the dielectric thickness of the feed stalk, the electric field was weakened and as a result, the confinement time was reduced. On the other hand, with the increase of the cathode radius, the confinement time increased. Using the results, an IEC device can be designed with higher efficiency and more optimal CT for ions.

Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability

  • Gupta, Ritesh;Aggarwal, Sandeep Kumar;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권3호
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    • pp.240-249
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    • 2004
  • In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

4H-SiC PiN 다이오드의 깊은 준위 결함에 따른 전기적 특성 분석 (Analysis of Electrical Characteristics due to Deep Level Defects in 4H-SiC PiN Diodes)

  • 이태희;박세림;김예진;박승현;김일룡;김민규;임병철;구상모
    • 한국재료학회지
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    • 제34권2호
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    • pp.111-115
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    • 2024
  • Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

Analytical Characterization of a Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution

  • Kushwaha, Alok;Pandey, Manoj K.;Pandey, Sujata;Gupta, Anil K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권2호
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    • pp.110-119
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    • 2007
  • A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resistance and device capacitance in DM DG FD SOI MOSFET is carried out with Pearson-IV type doping distribution as it is essential to establish proper profiles to get the optimum performance of the device. These parameters are categorically derived keeping view of potential at the center (${\phi}_c$) of the double gate SOI MOSFET as it is more sensitive than the potential at the surface (${\phi}_s$). The proposed structure is such that the work function of the gate material (both sides) near the source is higher than the one near the drain. This work demonstrates the benefits of high performance proposed structure over their single material gate counterparts. The results predicted by the model are compared with those obtained by 2D device simulator ATLAS to verify the accuracy of the proposed model.

정밀 파종용 롤러식 배종장치의 설계 (Design of Roller-Type Metering Device for Precision Planting)

  • 류일훈;김경욱
    • Journal of Biosystems Engineering
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    • 제22권4호
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    • pp.401-410
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    • 1997
  • Scattering of seeds is one of the problems in the hill- dropping planters with a roller-type metering device. For crops like rice, corns and beans, the hill-dropping is own better for a high yield than the drill planting. The roller type metering device has been used for the drill planters and has many advantages. However, it has a problem of scattering of seeds when they are placed on rows. In this study a method was developed to design the roller type metering device fir the precision hill-droppings. Design parameters were derived to configure completely the geometries of the roller and brush. The method was applied to the design of the metering device of the rice seeding machines. The field test showed that the metering device designed by the method made a better performance of seed placement than that made by the precvious one. The method also can be applied to the design of metering devices for the precise hill-droppings of other crops.

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