• 제목/요약/키워드: device fabrication

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KAIST의 마이크로 열기관 요소 기술 개발 (Development of Component of Micro Thermal Device in KAIST)

  • 이대훈;박대은;윤의식;권세진
    • 유체기계공업학회:학술대회논문집
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    • 유체기계공업학회 2002년도 유체기계 연구개발 발표회 논문집
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    • pp.482-485
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    • 2002
  • Development projects in KAIST rotted to the micro thermal device is introduced. Multi disciplinary research team is composed by combustion group and semiconductor group in KAIST and catalyst research center in KRICT to develop micro thermal/fluidic device and various items are on development. Among the projects, various kind of componenst that is required by the micro thermal devicesystem is introduced. Technology related to development of micro combustor, Micro igniter, micro fabrication of 3D structure, micro reactor and micro catalyst preparation is introduced.

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Electroactive Paper (EAPap)를 이용한 표면탄성파 센서 (Surface Acoustic Wave Sensor using Electroactive Paper (EAPap))

  • 이민희;김주형;김재환
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2008년도 추계학술대회논문집
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    • pp.368-371
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    • 2008
  • Cellulose based Electroactive Paper (EAPap) has been developed as a new smart material due to its advantages of piezoelectricity, large displacement, low power consumption, low cost and flexibility. EAPap can be used fur a surface acoustic wave (SAW) device using the piezoelectric property of EAPap, resulting in the cost effective and flexible SAW device. In this paper, inter digit transducer (IDT) structure using lift-off technique with a finger gap of $10{\mu}m$ was used for micro fabrication of the cellulose EAPap SAW devices. The performance of IDT patterned SAW device was characterized by a Network Analyzer. The feasibility of cellulose EAPap as a potential acoustic device was presented and explained.

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압력평형메커니즘을 이용한 초소형 수동형 기체 압력조정기 (A Micro Passive Gas Pressure Regulator using Pressure Balance Mechanism)

  • 이기정;양상식
    • 전기학회논문지
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    • 제59권1호
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    • pp.138-143
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    • 2010
  • This paper presents the analysis, the fabrication and the test results of a micro passive gas pressure regulator to keep the outlet pressure costant even for a widely-varying inlet pressure. This device is to regulate the outlet pressure according to the applied reference pressure based on the pressure balancing mechanism of the structure including a membrane and a valve. This regulator consists of four layers; a bulk-micromachined silicon substrate, a sandblasted glass substrate, a PDMS valve seat layer and a glass valve layer. The device size is $10\times13\times1.7 mm3$. The device was fabricated by micromachining. The characteristic of the device was analyzed and tested. The characteristic of the fabricated pressure regulator is similar to that obtained from the analysis. The pressure regulator of this paper is feasible for portable systems and miniature drug delivery systems.

PBD 청색유기발광체의 발광특성에 관한 연구 (A Study on the Emission Characteristics of PBD Blue Light Organic Electroluminesencent Matter)

  • 전동규;강용철;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.961-963
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    • 2002
  • Organic electroluminesencent device have been studied because of its easy fabrication and high brightness for plate panel display instead of cathode ray tube. There are some device structure for full color filter system can be applicable to the full color application if the blue light organic electroluminesencent device(OELD) is developed. In this study, we fabricated OELD of ITO/CuPc/PBD/LiF/Al using mixed of 500, 600, $700[{\AA}]$ by vacuum method as a emitting layer. We studied the voltage-current, voltage-luminance characteristics and blue light emission of OELD,

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Nanoscale NAND SONOS memory devices including a Seperated double-gate FinFET structure

  • Kim, Hyun-Joo;Kim, Kyeong-Rok;Kwack, Kae-Dal
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제10권1호
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    • pp.65-71
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    • 2010
  • NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

다층구조 OLED소자의 발광특성 (Emission Characteristics of Multilayer Structure OLED)

  • 최영일;조수영
    • 전자공학회논문지 IE
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    • 제48권4호
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    • pp.25-29
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    • 2011
  • 유기 EL소자는 제작이 쉽고 휘도가 높아 CRT와 LED 대신 평판 디스플레이 패널의 광원으로써 많이 연구되어 지고 있으며, OLED 소자중 청색 OLED는 풀컬러 적용 어플리케이션에 적용할 수 있기 때문에 이에 대한 연구가 이루어 지고 있다. 본 연구에서는, 발광 소재로 PBD, Alq3를 사용하여 유기 EL 디바이스의 전기 발광 특성을 측정하였으며, 전류와 휘도는 전압과의 관계에서 알 수 있었고 휘도와 전류의 관계를 제시하였다.

Investigation of Junction-less Tunneling Field Effect Transistor (JL-TFET) with Floating Gate

  • Ali, Asif;Seo, Dongsun;Cho, Il Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권1호
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    • pp.156-161
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    • 2017
  • This work presents a novel structure for junction-less tunneling field effect transistor (JL-TFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less field effect transistor (JLFET). A floating gate over source region and a control-gate with optimized metal work-function over channel region is used to make device work like a tunnel field effect transistor (TFET). The proposed device has exhibited excellent ID-VGS characteristics, ION/IOFF ratio, a point subthreshold slope (SS), and average SS for optimized device parameters. Electron charge stored in floating gate, isolation oxide layer and body doping concentration are optimized. The proposed JL-TFET can be a promising candidate for switching performances.

2D 햅틱 인터페이스 장치 설계 및 이를 이용한 가상 에어하키 시스템 구현 (Design and fabrication of a 2D haptic interface apparatus and the realization of a virtual air-hockey system using the device)

  • 백종원;강지민;용호중;최대성;장태정
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 학술대회 논문집 정보 및 제어부문
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    • pp.78-80
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    • 2005
  • Haptic interface apparatus is the device which can offer users virtual reality not only by visualization of virtual space but also by force or tactile feedback. In this paper, we designed and fabricated a 2D haptic interface device that can be used for various purposes, and implemented a virtual air-hockey system that users can easily find in game rooms. By suitable modeling and haptic rendering, users can feel the impact and the reaction force with his/her hand holding the handle through 2D haptic interface device when he/she hit an air-hockey puck with the handle. Through the trial demonstration. we observed the reasonable effect of direction and speed of a ball like doing in reality.

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초고압 선로 진단장치용 외함 절연설계 (The Insulation Design of Enclosure for Diagnostic Device in Extra High Voltage Line)

  • 김기준
    • 한국전기전자재료학회논문지
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    • 제28권3호
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    • pp.201-207
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    • 2015
  • In this paper, in order to avoid equipment malfunction due to electromagnetic waves, which can occur when high-voltage live line diagnostic device fabrication, the enclosure structure of the diagnostic device with power lines that can minimize the EMI (electromagnetic interference) was modeled using the FEM (finite element method). Simulation examined the strength of the electric field in the required thickness, material and regions where there is a control board while changing the curvature radius of the corner making the enclosure, and By applying a mechanical design and simulation results that occur during the actual production has been designed for the final design. Most of the simulation results for the electric field is concentrated in the final model, the inner edge of the enclosure could be confirmed that the stable structure.

Fabrication Techniques for Carbon Nanotube Field Emitters by Screen Printing

  • Yi, Mann;Jung, Hyuk;Lee, Dong-Gu;Seo, Woo-Suk;Park, Jong-Won;Chun, Hyun-Tae;Koh, Nam-Je
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.655-657
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    • 2002
  • The carbon nanotube emitters for field emission displays were fabricated by screen printing techniques. The pastes for screen printing are composed of organic binders, carbon nanotubes, and some additive materials. Then the pastes were printed on Cr-coated/Ag-printed soda-lime glass substrates. From the I-V characteristics, the turn-on field of SWNT was lower than that of MWNT. The decrease in the mesh size of screen masks resulted in decreasing the turn-on field and increasing the electron emission current. When the carbon nanotubes were mixed with glass frit, glass frit appeared to contribute to the vertically aligning of carbon nanotubes on glass.

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