• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.268-268
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• 2012

Adsorption and desorption of toluene from bare and $TiO_2$-coated silica with a mean pore size of 15 nm was studied using breakthrough curves and temperature programmed desorption. Thicknesses of $TiO_2$ films prepared by atomic layer deposition on silica were < 2 nm, and ~ 5 nm, respectively. For toluene adsorption, both dry and humid conditions were used. $TiO_2$-thin film significantly improved toluene adsorption capacity of silica under dry condition, whereas desorption of toluene from the surface as a consequence of displacement by water vapor was more pronounced for $TiO_2$-coated samples with respect to the result of bare ones. In the TPD experiments, silica with a thinner $TiO_2$ film (thickness < 2 nm) showed the highest reactivity for toluene oxidation to $CO_2$ in the absence and presence of water. We show that the toluene adsorption and oxidation reactivity of silica can be controlled by varying thickness of $TiO_2$ thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.477-477
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• 2011

In this paper, we synthesize ZnO wire on Si substrate by catalyst-free thermal chemical vapor deposition (CVD). Each ZnO wire is grew up at different condition such as temperature and O2 flow rate. The Young's modulus of individual ZnO wires were estimated using quasi-static and dynamic measurements, as well as resonance frequency measurements. Using this system, current-voltage characteristics of each ZnO wire structure fabricated on a trench were measured. A new concept of electromechanical device structure combined with the piezoelectric effect of ZnO will be suggested in the end of this paper.

• 센서학회지
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• 제13권3호
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• pp.182-187
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• 2004

The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.

• 한국환경복원기술학회지
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• 제13권2호
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• pp.95-104
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• 2010

The purpose of this study is to analyze the correlation between physical stream characteristics and bed materials in natural rivers. Accordingly, four natural rivers were selected reference streams, they were Nam river, Sumjin River, Naesung River and Han River. Grain size distributions of bed materials were gravels, cobbles and boulders in Han river and Nam river, were sand, gravels, cobbles and boulders in Sumjin river and were sand in Naesung river. Four reference streams were divided into each two reference reaches (straight and bend) by plan and profile characteristics of naturally meandering stream. Therefore various reference reaches were chosen in the aspect of physical stream characteristics and grain size distributions. The results investigated and analyzed are as follows. The streams that grain sizes distributions of river bed materials were coarse were stable because they had variety of bed slope without sediment deposition, and then the riffles frequency and the physical characteristics were various. Also, velocitydepth regime were various in four kinds, and the response parts for water level change were small, so that channel flow status were stable and excellent condition. On the other hand, sand river that grain sizes distributions of river bed materials were fine had not the variety of parameters as velocity-depth regimes, sediment deposition, channel flow status and riffles frequency, so that the physical stream characteristics were not various.

• 한국재료학회지
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• 제5권5호
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• pp.568-574
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• 1995

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.

• 한국표면공학회지
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• 제37권3호
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.56-63
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• 2013

IGZO thin films have been prepared by RF magnetron sputtering. The structural, electrical and optical properties of the IGZO thin films have been investigated as a function of deposition condition. XRD analysis of IGZO thin films showed a typical crystallographic orientation with c-axis perpendicular regardless of deposition conditions. The carrier mobility, carrier concentration and resistivity of the IGZO films sputtered at 200 W, 1mTorr and $300^{\circ}C$ were $28.5cm^2/V{\cdot}sec$, $2.6{\times}10^{20}cm^3$, $8.8{\times}10^{-4}{\Omega}{\cdot}cm$ respectively. The optical transmittance were higher than 80% at visible region regardless of the deposition conditions under the experiments above, and specifically higher than 90% at wave length over 500 nm. The absorption edge was shifted to shorter wavelength with increase of carrier concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.570-574
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• 1999

In this paper, by using the electrophoresis, preparation of YBCO superconducting wire deposited on metal Ag base wire was studied with its Properties. YBCO Powder could be prepared by solid state reactions with calcining and sintering processes. Superconducting wire prepared on metal Ag wire used as cathode of deposition base could be also fabricated in the YBCO/acetone-dispersed solution to obtain several tens of re thick films. And then it could be used as superconducting wire for measurement after calcination, sintering and oxygen absorption processes. In the process of film deposition, a catalyst I$_2$added into the suspension solution was very useful for preparing thick film of YBCO, and BaF$_2$ of additive material was also necessary for preparing crack-free wire of YBCO superconductor. As a result, YBCO superconducting wire added 2~3wt.% of BaF$_2$\ulcorner with catalyst, 12 had better deposition condition for uniform and dense YBCO wires, and critical current density, Jc was calculated at the value of 1,458A/$\textrm{cm}^2$(more than 10$^{3}$A/$\textrm{cm}^2$ ,77K, o[T]) of 30${\mu}{\textrm}{m}$ thick sample by 4 point prove method.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.231-234
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• 1998

In this experiment, A1$_2$O$_3$thick films were prepared by electrophoretic method using A1$_2$O$_3$ fine powder of which compositions were FA-5-500 and FA-5-900. As a result of measurement for A1$_2$O$_3$ thick film characteristics due to applied voltage, deposition time and additives condition, the result of deposited films exhibited superior than others when the applied voltage and deposition time were 65 volts and 2 seconds in case of using modified suspension medium added additives. When taken a heat treatment and sintered A1$_2$O$_3$ deposition film made by electrophoresis with A1$_2$O$_3$ suspension medium at 1$700^{\circ}C$ for 5 minutes in hydrogen environment, it could be fabricated in good uniformity and electric characteristics as the A1$_2$O$_3$ insulating thick films.