Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Properties of ZnO:Ga,In(IGZO) Thin Films Prepared by RF Magnetron Sputtering

고주파 마그네트론 스퍼터링법으로 제조된 ZnO:Ga,In(IGZO) 박막의 특성

  • Kim, Hyoung Min (Department of Semiconductor Engineering, Gyeongsang National University) ;
  • Ma, Tae Young (Department of Electrical Engineering, Gyeongsang National University) ;
  • Park, Ki Cheol (Department of Semiconductor Engineering, Gyeongsang National University)
  • 김형민 (경상대학교 반도체공학과) ;
  • 마대영 (경상대학교 전기공학과) ;
  • 박기철 (경상대학교 반도체공학과)
  • Received : 2012.10.19
  • Accepted : 2012.11.29
  • Published : 2013.01.01
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Abstract

IGZO thin films have been prepared by RF magnetron sputtering. The structural, electrical and optical properties of the IGZO thin films have been investigated as a function of deposition condition. XRD analysis of IGZO thin films showed a typical crystallographic orientation with c-axis perpendicular regardless of deposition conditions. The carrier mobility, carrier concentration and resistivity of the IGZO films sputtered at 200 W, 1mTorr and $300^{\circ}C$ were $28.5cm^2/V{\cdot}sec$, $2.6{\times}10^{20}cm^3$, $8.8{\times}10^{-4}{\Omega}{\cdot}cm$ respectively. The optical transmittance were higher than 80% at visible region regardless of the deposition conditions under the experiments above, and specifically higher than 90% at wave length over 500 nm. The absorption edge was shifted to shorter wavelength with increase of carrier concentration.

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