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Deposition and Analysis of Fluorinated Amorphous Carbon Thin Films by PECVD

PECVD에 의한 비정질 불화탄소막의 증착 및 특성분석

  • Kim, Ho-Woon (Department of Electronics, Kyungpook National University) ;
  • Shin, Jang-Kyoo (Department of Electronics, Kyungpook National University) ;
  • Kwon, Dae-Hyuk (School of Electronic & Information Engineering, Kyungil University) ;
  • Seo, Hwa-Il (School of Information Technology, Korea University of Technology and Education)
  • 김호운 (경북대학교 전자공학과) ;
  • 신장규 (경북대학교 전자공학과) ;
  • 권대혁 (경일대학교 전자정보공학과) ;
  • 서화일 (한국기술교육대학교 정보기술공학부)
  • Published : 2004.05.31

Abstract

The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.

Keywords

References

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