• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Journal of Ocean Engineering and Technology
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• v.15 no.4
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• pp.66-72
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• 2001

Recently the steel parts used at automobiles are required to be used under high stress more than ever before in need of the weight down. To achieve this requirement of a high strength steel, it must be necessary to decrease inclusion content and surface defect as like decarburization, surface roughness etc.. In this study, the surface conditions are measured to know the influence on fatigue properties by two cases of shot peening of two-stage shot peening and single-stage shot peening. And for this study, two kinds of spring steel (JISG4081SUP7, DIN 50CrV4) are used. This study shows the outstanding improvement of fatigue properties at the case of two-stage shot peening in the rotary bending fatigue test and this is assumed to be from on low stress condition, the 1st stage shot peening is not affected by nonmetallic inclusion under metal. it is possible that the 2nd stage shot peening increases the fatigue life and the high stress but that is affected by nonmetallic inclusion under metal. so far beeasily DIN50CrV4 have made high stress. But, results also show fatigue failures originated at inclusion near surface, and this inclusion type is turned out to be a alumina of high hardness.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• The Transactions of the Korea Information Processing Society
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• v.3 no.1
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• pp.167-180
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• 1996

In the scalar processing oriented machine scalar operations must be performed for the vector processing as many as the number of vector components. So called a vector processing mechanism by the von Neumann operational principle. Accessing vector data hasto beperformed by theevery pointing ofthe instruction or by the address calculation of the ALU, because there is only a program counter(PC) for the sequential counting of the instructions as a memory accessing device. It should be here proposed that an access unit dimensionally to address components has to be designed for the compensation of the organizational hardware defect of the conventional concept. The necessity for the vector structuring has to be implemented in the instruction set and be performed in the mid of the accessing data memory overlapped externally to the data processing unit at the same time.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.436-444
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• 2016

Oil-paper insulation of valve-side windings in converter transformers withstand electrical stresses combining with AC, DC and strong harmonic components. This paper presents the physical mechanisms and experimental researches on partial discharge (PD) of oil-paper insulation at pulsating DC voltage. Theoretical analysis showed that the phase-resolved distributions of PDs generated from different insulated models varied as the increase of the applied voltages following a certain rule. Four artificial insulation defect models were designed to generate PD signals at pulsating DC voltages. Theoretical statements and experimental results show that the PD pulses first appear at the maximum value of the applied pulsating DC voltage, and the resolved PD phase distribution became wider as the applied voltage increased. The PD phase-resolved distributions generated from the different discharge models are also different in the phase-resolved distributions and development progress. It implies that the theoretical analysis is suitable for interpretation of PD at pulsating DC voltage.

• Journal of KSNVE
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• v.9 no.4
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• pp.841-848
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• 1999

In the quality assurance check process of DC motor systems, even though the overall sound pressure level is acceptable, there is an incident that subjective evaluation leads to failure in product quality due to annoying noise. This kind of problem may be originated from the manufacturing or assembly process. In this paper, the transient spectral analysis, or the time-frequency analysis is applied to the noise quality problem. For the case study, the cause of annoying noise in the wind shield wiper motor is experimentally analyzed in detail. It is concluded that the defect in the shaft causes the impact noise which is not detectable by steady spectral analysis. Also demonstrated is how the time-frequency analysis is effectively applied to the annoying noise identification of the rotor-gear system.

• Proceedings of the KSAR Conference
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• 2002.06a
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• pp.92-92
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• 2002

The neuropeptide vasopressin (VP) is a nine- amino acid hormone synthesized as preprohormone in the cell bodies of hypothalamic magnocellular neurons. The tumor in magnocellular neurons of the hypothalamus is associated with disfunctions of the cell bodies, leading to the diabetes insipidus. In order to produce the disease models with a defect in VP synthesis and its secretion, we have produced the transgenic mice regulated by VP constructs containing 3.8 kbp of the 5'flanking region and all the exons and introns in the mouse VP gene, which was fused at the end of exon 3 to a SV40 Tag. The two VP-transgene constructs differed by the lengths of their VP gene 3' flanking regions (2.1 versus 3.6 kbp). (omitted)

• Journal of Broadcast Engineering
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• v.8 no.3
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• pp.297-305
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• 2003

In this paper, we propose a wavelet based fast motion estimation algorithm for video sequence encoding with very low bit-rate. By using one of properties oi wavelet transform, multi-resolution analysis(MRA) property and spatial Interpolation of an image, we are able to reduce both prediction error and computational complexity at the same time. Especially, by defining a significant block(SB) based on the differential information of wavelet coefficients between successive frames, the proposed algorithm makes up a defect of multi-resolution motion estimation(MRME) algorithm of increasing the number of motion vectors. As experimental results. we can reduce the computational load up to 70% but also improve PSNR up to about 0.1 ∼ 1.2 dB comparing with the MRME algorithm.