Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2003.03a
- /
- Pages.84-84
- /
- 2003
A Study on photoluminescience of ZnSe/GaAs epilayer
- Park, Changsun (Department of metallurgical and Material Science Engineering, Chosun University) ;
- Kwangjoon Hong (Department of Physics, Chosun University)
- Published : 2003.05.01
Abstract
The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I