• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.302-308
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• 2011

In this paper, we have proposed a new approach for optical failure analysis which employs a CMOS photon-emitting circuitry, consisting of a flip-flop based on a sense amplifier and a photon-emitting device. This method can be used even with deep-submicron processes where conventional optical failure analyses are difficult to use due to the low sensitivity in the near infrared (NIR) region of the spectrum. The effectiveness of our approach has been proved by the failure analysis of a prototype designed and fabricated in 0.18 ${\mu}m$ CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.27-34
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• 2004

The study on the RF substrate circuit is necessary to model RF output characteristics of deep submicron MOSFETs below 0.2$\mum$ gate length that have bun commercialized by the recent development of Si submicron process. In this paper, direct extraction methods are developed to apply for a simple substrate resistance model as well as another substrate model with connecting resistance and capacitance in parallel. Using these extraction methods, better agreement with measured Y22-parameter up to 30 GHz is achieved for 0.15$\mum$ CMOS device by using the parallel RC substrate model rather than the simple resistance one, demonstrating the RF accuracy of the parallel model and extraction technique. Using this model, bias and gate length dependent curves of substrate parameters in the RF region are obtained by increasing drain voltage of 0 to 1.2V at deep submicron devices with various gate lengths of 0.11 to 0.5㎛ These new extraction data will greatly contribute to developing a scalable RF nonlinear substrate model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.2
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• pp.189-194
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• 2018

Nowadays most integrated circuits are built using the bulk CMOS technology, but it has much difficulty in further reduction of the power consumption and die size. As a super low-power technology to solve such problems, the SOI technology attracts great attention recently. In this paper, the study results of the temperature dependency of the hot carrier effects in the n-channel MOSFETs fabricated on the thin SOI substrate were discussed. In spite that the devices employed the LDD structure, the hot carrier effects were more serious than expected due to the high series resistance between the channel region and the substrate contact to the ground, and were found to be less serious for the higher temperature with the more phonon scattering in the channel region, which resulted in reducing the hot electron generation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.206-209
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• 2006

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.271-274
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• 2003

This paper presents a Built-in Current Sensor that detect defects in CMOS integrated circuits using the current testing technique. This scheme employs a cross-coupled connected PMOS transistors, it is used as a current comparator. Our proposed scheme is a negligible impart on the performance of the circuit undo. test (CUT). In addition, in the normal mode of the CUT not dissipation extra power, high speed detection time and applicable deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The entire area of the test chip is $116{\times}65{\mu}m^2$. The BICS occupies only $41{\times}17{\mu}m^2$ of area in the test chip. The area overhead of a BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.134-138
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• 2008

We present a power gating turn-on mechanism that digitally suppresses ground-bounce noise in ultra-deep submicron technology. Initially, a portion of the sleep transistors are switched on in a pseudo-random manner and then they are all turned on fully when VVDD is above a certain reference voltage. Experimental results from a realistic test circuit designed in 65nm bulk CMOS technology show the potential of our approach.

• ETRI Journal
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• v.19 no.4
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• pp.402-413
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• 1997

A CMOS device which has an extended heavily-doped amorphous silicon source/drain layer on the field oxide and an amorphous silicon local interconnection (ASLI) layer in the self-aligned source/drain region has been studied. The ASLI layer has some important roles of the local interconnections from the extended source/drain to the bulk source/drain and the path of the dopant diffusion sources to the bulk. The junction depth and the area of the source/drain can be controlled easily by the ASLI layer thickness. The device in this paper not only has very small area of source/drain junctions, but has very shallow junction depths than those of the conventional CMOS device. An operating speed, however, is enhanced significantly compared with the conventional ones, because the junction capacitance of the source/drain is reduced remarkably due to the very small area of source/drain junctions. For a 71-stage unloaded CMOS ring oscillator, 128 ps/gate has been obtained at power supply voltage of 3.3V. Utilizing this proposed structure, a buried channel PMOS device for the deep submicron regime, known to be difficult to implement, can be fabricated easily.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.19-27
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• 2002

Characteristics of interconnect lines considering underlayer geometries of a silicon substrate and crossing metal lines are experimentally analyzed through elaborately devised patterns. In this work, test patterns for transmission lines having several kinds of underlayer geometries were devised, and the signal characteristics and responses are measured by S-parameter and time domain reflection meter (TDR). The patterns were designed and fabricated with a deep-submicron CMOS DRAM technology having 1 Tungsten and 2 Aluminum metals. From the analysis of measured results on the patterns, it is founded that the effects of underlayter line structures on line parameters (especially line capacitance and resistance) and signal distortions occurred from them cannot be negligible. The results provide useful and insightful understanding in the skew balance of package leads and global signal lines such as high-speed clock and data lines.

• Journal of IKEEE
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• v.9 no.1 s.16
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• pp.57-64
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• 2005

This paper presents a built-in current sensor(BICS) that detects defects in CMOS integrated circuits using the current testing technique. This circuit employs a cross-coupled connected PMOS transistors, it is used as a current comparator. The proposed circuit has a negligible impact on the performance of the circuit under test (CUT) and high speed detection time. In addition, in the operation of the normal mode, the BlCS does not have dissipation of extra power, and it can be applied to the deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The area overhead of a BlCS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS standard technology.