• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1445-1449
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• 2005

The ram assembly is important equipment in fueling machine of PHWR(Pressurized Heavy Water Reactor) plant where fuel replacement is possible while the plant is in service. Troubles in the ram assembly can cause lots of difficulties in power plant operation. The ram assembly is typically composed of the B-ram, the L-Ram and the C-Ram. The B-ram is focused in this paper because it plays the most important role in the ram assembly. Among the ram fault phenomena, ram stuck phenomena are the most frequent cases in the B-ram, which has a ball screw mechanism driven by a hydraulic motor. Ram stuck phenomena are due to ball wear and damage in ball nut that increase in proportion to the number of fuel replacement. It is required to predict ram stuck phenomena before they occur. In this paper, a method is proposed for predicting ram stuck phenomena using a discrete wavelet transform. The discrete wavelet transform provides information on both the time and frequency characteristics of the input signals. The proposed method uses the frequency bandwidths of coefficients of discrete wavelet decompositions and detail coefficients of discrete wavelet transform to predict ram stuck phenomena. The signal used in this paper is a torque-related signal such as a hydraulic service outlet pressure signal in a hydraulic driving system or a current signal in a DC motor driving system. Finally, the validity of the proposed method is shown via experiment using ball nut characteristic test equipment that simulates ram stuck phenomena due to increased ball friction in ball nut.

• 전자공학회논문지SC
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• 제39권5호
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• pp.43-50
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• 2002

다이오드 정류회로의 전류 파형을 향상시키기 위해서 배전압 다이오드 정류회로에 대한 새로운 동작원리를 제안하였다. 기존의 배전압 정류회로는 대용량 캐패시터를 이용하여 출력전압을 높였으나 제안한 회로는 소용량의 캐패시터와 리액터를 이용하기 때문에 출력전압은 높아지지 않지만 입력전류의 파형을 개선할 수 있다. 그리고 역률과 효율이 각각 97[%], 98[%]을 얻을 수 있다. 제안한 정류기는 고조파 규제값과 스위치가 서로 영향을 미치지 않고 다이오드와 인덕터 그리고 콘덴서로 구성된 비선형 임피턴스 회로이다. 또한 일반적인 펄스 폭 변조 인버터와 하프 펄스 폭 변조 인버터를 비교하여 설명하였으며 제안된 하프 펄스 폭 변조 인버터에 의해서 낮은 스위칭 손실과 오버슈팅을 제어할 수 있다.

• 공업화학
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• 제28권2호
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• pp.171-176
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• 2017

염화이불화메탄($CHClF_2$) 냉매를 완전하게 분해하여 회수하기 위한 질소 플라즈마 열분해 공정이 연구되었다. 과열증기를 공급하여 분해가 보다 원활히 이루어질 수 있도록 스팀 발생기가 부착되었다. 60 A, 9.0 kW 이상의 운전 조건에서 94% 이상의 높은 분해율을 보이지만 탄소 성분의 완전 연소를 위해서는 같은 전류 대비 더 높은 power와 specific energy density를 갖춰야 함이 확인되었다. 60 A, 12.6 kW급 이상의 운전 조건에서는 $O_2$/R-22 ratio가 specific energy density에 비례하여 증가하였을 때 더 높은 분해율을 획득할 수 있었다. 반응물인 산소를 주입하는데 있어서 air를 단독으로 과량 주입하는 것보다는 산소를 air와 혼합하여 주입하는 것이 더 유용함이 밝혀졌다.

• 대한기계학회논문집B
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• 제21권8호
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• pp.1068-1076
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• 1997

Emission control of acid exhaust gases from coal-fired power plants and waste incinerators has become an increasing concern of both industries and regulators. Among those gaseous emissions, SO$_{2}$ has been eliminated by a Spray Drying Absorber (SDA) system, where the exhaust gas is mixed with atomized limestone-water slurry droplets and then the chemical reaction of SO$_{2}$ with alkaline components of the liquid feed forms sulfates. Liquid atomization is necessary because it maximizes the reaction efficiency by increasing the total surface area of the alkaline components. An experimental study was performed with a laboratory scale SDA to investigate whether the scrubbing efficiency for SO$_{2}$ reduction increased or not with the application of a DC electric field to the limestone-water slurry. For a selected experimental condition SO$_{2}$ concentrations exited from the reactor were measured with various applied voltages and liquid flow rates. The applied voltage varied from -10 to 10 kV by 1 kV, and the volume flow rate of slurry was set to 15, 25, 35 ml/min which were within the range of emission mode. Consequently, the SO$_{2}$ scrubbing efficiency increased with increasing the applied voltage but was independent of the polarity of the applied voltage. For the electrical and flow conditions considered a theoretical study of estimating average size and charge of the atomized droplets was carried out based on the measured current-voltage characteristics. The droplet charge to mass ratio increased and the droplet diameter decreased as the strength of the applied voltage increased.

• 한국재료학회지
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• 제23권6호
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• 한국표면공학회지
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• 제48권6호
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• pp.297-302
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• 2015

Nanocrystalline diamond(NCD) coated aluminium plates were prepared and applied as heat sinks for LED modules. NCD films were deposited on 1 mm thick Al plates for times of 2 - 10 h in a microwave plasma chemical vapor deposition reactor. Deposition parameters were the microwave power of 1.2 kW, the working pressure of 90 Torr, the $CH_4/Ar$ gas ratio of 2/200 sccm. In order to enhance diamond nucleation, DC bias voltage of -90 V was applied to the substrate during deposition without external heating. NCD film was identified by X-ray diffraction and Raman spectroscopy. The Al plates with about 300 nm thick NCD film were attached to LED modules and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. Thermal resistance of the module with NCD/Al plate was 3.88 K/W while that with Al plate was 5.55 K/W. The smaller the thermal resistance, the better the heat emission. From structure function analysis, the differences between junction and ambient temperatures were $12.1^{\circ}C$ for NCD/Al plate and $15.5^{\circ}C$ for Al plate. The hot spot size of infrared images was larger on NCD/Al than Al plate for a given period of LED operation. In conclusion, NCD coated Al plate exhibited better thermal spreading performance than conventional Al heat sink.

• ETRI Journal
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• 제24권3호
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• pp.211-220
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• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.378-384
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• 2003

Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.

• 조명전기설비학회논문지
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• 제16권3호
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• pp.74-83
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• 2002

본 논문은 전력설비에 조기적용이 예상되는 초전도한류기의 파라메타를 정의하고 앞으로 개발방향을 제시하기 위하여 한류기의 동작원리, 특성 및 계통조기적용가능성들을 근거로 파라메타의 특성을 비교 ·평가하였다. 또한 한류기의 계통적용효과를 분석하기 위하여 SFCL이 기간 특고압 모델계통에 도입한 경우를 상정하여 3선지락 고장에서 저항형과 유도형 SFCL의 도입 효과에 대하여 RTDS (Real Time Digital Simulation)/EMTDC(Electromagnetic Transient DC)로 시뮬레이션하였다. 특히 저항형과 유도형의 한류효과의 비교 평가, 모선전압의 저하 억제 및 계통과 한류기의 파라메타와의 관련성에 대하여 검토하였다.