Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Surface Reactions on the Bi4-xLaxTiO3O12 Thin Films Etched in Inductively Coupled CF4/Ar Plasma

유도결합 CF4/Ar 플라즈마에 의한 Bi4-xLaxTiO3O12 박막의 식각 표면 반응

  • 김동표 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2003.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.

Keywords

References

  1. Feroelectric Materials and Their Applications Y.Xu
  2. Nature v.401 no.14 Lanthanum-substituted bismuth titanate for use in non-volatile memories B.H.Park;B.S.Kang;S.D.Bu;T.W.Noh;J.Lee;W.Jo https://doi.org/10.1038/44352
  3. 전기전자재료학회 논문지 v.15 no.9 비휘발성 메모리 소자응용을 위한 과잉 Bi 첨가에 따른 BLT 박막의 강유전 특성 김경태;김창일;강동희;심일운 https://doi.org/10.4313/JKEM.2002.15.9.764
  4. Appl. Phys. Lett. v.78 Why Ianthanum substituted bismuth titanate becomes fatigue free in a ferroelectric capacitor with platinum electrodes Y.Ding;J.S.Liu;H.X.Qin;J.S.Zhu;Y.N.Wang https://doi.org/10.1063/1.1381038
  5. J. Vac. Sci. Technol. A v.18 Effects of BCl₃addition on Ar/Cl₂ gas in inductively coupled plasmas for lead zirconate titanate etching T.H.An;J.Y.Park;G.Y.Yeom;E.G.Chang;C.I.Kim https://doi.org/10.1116/1.582356
  6. Jpn. J. Appl. Phys. v.40 Dry etching characteristics of Pb(Zr,Ti)O₃films in CF₄ and CI₂/CF₄ inductively coupled plasmas J.K.Jung;W.J.Lee https://doi.org/10.1143/JJAP.40.1408
  7. 전기전자재료학회논문지 v.15 no.11 Ar/CF₄유도결합 플라즈마를 이용한 $Ba_{0.6}Sr_{0.4})$ TiO₃박막의 식각 특성 강필승;김경태;김동표;김창일;이수재 https://doi.org/10.4313/JKEM.2002.15.11.933
  8. 전기전자재료학회논문지 v.15 no.7 $CI_2/CF_4/Ar$ 유도결합 플라즈마에 의해 식각된 SBT 박막의 표면 손상 김동표;김창일;이철인;김태형;이원재;유병곤 https://doi.org/10.4313/JKEM.2002.15.7.570
  9. J. Vac. Sci. Technol. A v.19 Dry etching of $SrBi_2Ta_2O_9$ thin films in $CI_2/NF_3/O_2/Ar$ inductively coupled plasmas Y.H.Im;J.S.Park;C.S.Choi;R.J.Choi;Y.B.Hahn;S.H.Lee;J.K.Lee https://doi.org/10.1116/1.1351800
  10. Microelectron. Eng. v.29 Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma H.Mace;H.Achard;L.Peccoud https://doi.org/10.1016/0167-9317(95)00113-1
  11. J. Vac. Sci. Technol. A v.17 Studies of ion bombardment in higih density plasmas containing CF₄ J.K.Olthoff;Y.Wang https://doi.org/10.1116/1.581851
  12. J. Vac. Sci. Technol. A v.14 Plasma etch modeling using optical emission spectroscopy R.Chen;H.Huang;C.J.Spanos;M.Gatto https://doi.org/10.1116/1.580357
  13. J. Vac. Sci. Technol. A v.15 Analysis of the etching of silicon in an inductively coupled chlorine plasma using laser thermal desorption J.Y.Choe;I.P.Herman;V.M.Donnelly https://doi.org/10.1116/1.580899
  14. Appl. Phys. Lett. v.68 Reactive ion etching of ferroelectric $SrBi_2Ta_xNb_{2-x}O_9$ thin films S.B.Desu;W.Pan https://doi.org/10.1063/1.116402
  15. Jpn. J. Appl. Phys. v.38 Effects of ion etching and annealing in O₂atmosphere following ion etching on properties and chemistry of $Sr_{0.9}Bi_{2.1}Ta_2O_{9+a}$ thin films K.Asami;I.Koiwa;T.Yamanobe https://doi.org/10.1143/JJAP.38.5423
  16. Glow Discharge Process B.Chapman
  17. Handbook of Chemistry and Physics David R. Lide(ed.)