Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

A Study on the High Integrated 1TC SONOS flash Memory

고집적화된 1TC SONOS 플래시 메모리에 관한 연구

  • 김주연 (울산과학대학 전기전자통신학부) ;
  • 김병철 (진주산업대학교 전자공학과) ;
  • 서광열 (광운대학교 반도체 및 신소재공학과)
  • Published : 2003.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

Keywords

References

  1. IEDM Comparison and trends in today's dominant E2 technologies S.K.Lai;V.K.Dham
  2. 전기전자재료학회지 v.7 no.2 EEPROM 기술의 현황과 전망 이상배;서광열
  3. Nonviolation Semiconductor Memory Technology William D. Brown
  4. 전기전자재료학회지 v.12 no.11 NOR 플래시 메모리를 위한 전하트랩형 NVSM 셀의 제작과 특성 김선주;김주연;김병철;서광열
  5. 전기전자재료학회지 v.7 no.2 SONOS EEPROM 소자에 관한 연구 서광열
  6. IEEE Trans. v.20 no.2 A low voltage SONOS nonvolatile semiconductor memory technology White,M.H.;Yang,Y.L.;Purwar;A.French,M.L. https://doi.org/10.1109/TCOM.1972.1091134
  7. Non-Volatile Semiconductor memory workshop 13th-16th MONOS memory cell scalable to 0.1㎛ and beyond Ichiro Fujiwara;Hiroshi Aozawa;Akihiro Nakamura;Yutaka Hayashi;Toshio Kobayashi
  8. 플레시 메모리 기술 황현상;박근형
  9. IEDM A novel erasing technology for 3.3V flash memory with 64Mb capacity and beyond K.Oyama;H.Shiral
  10. Proc. Int. reliability Phys. symp. Reliability performance of ETOX based flash memories Gautam Verma;Neal Mielke