• 한국재료학회지
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• 제26권8호
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.135-140
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• 2018

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.137-140
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• 1993

Electrical properties and thermal annealing effects of $C_{22}$-quinolium(TCNQ) Langmuir-Blodgett(LB) films were studied. Typical current-voltage(I-V) characteristics along the perpendicular direction chow an anomalous behavior of breakdown near the electric-field strength of $10^{6}$V/cm. To see the thermal influence of the specimen, current was measured as a function of temperature(20∼$180^{\circ}C$). It shows that the current increases about 4 orders of magnitude near 60∼$70^{\circ}C$ and remains constant far a while up to ∼$150^{\circ}C$ and then suddenly drops. Such increase of current near 60∼$70^{\circ}C$ seems tn be related to a softness of alkyl chains. Besides the electrical measurements, UV/visible absorption(300∼800 nm) of the thermally annealed sample was measured to see the internal-structure change. It is found that there are four characteristic peaks. At 494 nm, the optical absorption of the thermally annealed specimen at $60^{\circ}C$ starts increase and stays almost constant upto∼ $140^{\circ}C$. And eventually it disappears above $180^{\circ}C$. After heat treatment of the specimen up to $150^{\circ}C$, Uv/visible absorption was measured while cooling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1924-1926
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• 2005

Poly(methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observes by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for repeated annealing cycles at $100^{\circ}C$. 1-V measured at various delay times $(0{\sim}20sec)$ showed little change and the absence of hysteresis in the I-V characteristics with delay times, which eliminate the possibility of deep traps in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• KEPCO Journal on Electric Power and Energy
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• 제2권3호
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• pp.421-424
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• 2016

In order to evaluate the insulation deterioration in the stator windings of air-cooled gas turbine generators(119.2 MVA, 13.8 kV) which has been operating for more than 15 years, diagnostic test and AC dielectric breakdown test were performed on phases A, B and C. Diagnostic test included measurements of AC current, dissipation factor, partial discharge (PD) magnitude and capacitance. ${\Delta}I$ and ${\Delta}tan{\delta}$ in all three phases (A, B, and C) of generator stator windings showed that they were in good condition but PD magnitude indicated marginally serviceable condition. After the diagnostic test, an AC overvoltage test was performed by gradually increasing the voltage applied to the generator stator windings until electrical insulation failure occurred, in order to determine the breakdown voltage. Although phase A of generator stator windings failed at breakdown voltage of 29.0 kV, phases B and C endured the 29.0 kV. The breakdown voltage in all three phases was higher than that expected for good-quality windings (28.6 kV) in a 13.8 kV class generator.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Applied Microscopy
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• 제46권4호
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• pp.244-252
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• 2016

This paper describes a new design of carbon nanotube tip. $Nanocly^{TM}$ NC 7000 Thin Multiwall Carbon Nanotubes of carbon purity (90%) and average diameter tube 9.5 nm with a high aspect-ratio (>150) were used. These tips were manufactured by employing a drawing technique using a glass puller. The glass microemitters with internal carbon nanotubes show a switch-on effect to a high current level (1 to $20{\mu}A$). A field electron microscope with a tip (cathode)-screen (anode) separation at ~10 mm was used to characterize the electron emitters. The system was evacuated down to a base pressure of ${\sim}10^{-9}$ mbar when baked at up to ${\sim}200^{\circ}C$ overnight. This allowed measurements of typical Field Electron Emission characteristics; namely the current-voltage (I-V) characteristics and the emission images on a conductive phosphorus screen (the anode). Fowler-Nordheim plots of the current-voltage characteristics show current switch-on for each of these emitters.