JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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High Dose $^{60}Co\;{\gamma}$-Ray Irradiation of W/GaN Schottky Diodes

  • Kim, Jihyun (Department of Chemical Engineering, University of Florida) ;
  • Ren, F. (Department of Chemical Engineering, University of Florida) ;
  • Schoenfeld, D. (Department of Nuclear and Radiological Engineering, University of Florida) ;
  • Pearton, S.J. (Department of Materials Science and Engineering, University of Florida) ;
  • Baca, A.G. (Sandia National Laboratories) ;
  • Briggs, R.D. (Sandia National Laboratories)
  • Published : 2004.06.30
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Abstract

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

Keywords

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