• Title/Summary/Keyword: current-effect

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Effect of Si on Arc Stability of MAG Welding (MAG용접의 Arc안정성에 미치는 Si의 영향)

  • 안영호;이종봉;엄동석
    • Journal of Welding and Joining
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    • v.16 no.6
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    • pp.52-58
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    • 1998
  • The effect of Si content in welding wires on th arc stability was investigate, in the region of short circuit transfer and spray transfer. In the region of short circuit transfer, with increasing Si content, average arcing time and average short circuit time were increased. Therefore, droplet transfer frequency was decreased, due to the increase of arcing time and peak current at the moment of arc-reiginition was increased, due to the increase of short circuit time. In the region of spray transfer, the fluctuations of arc current and arc voltage was the most stable in wire with Si content of about 00.60 wt.%.

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The Effect of Interference Current on the I-V Characteristic Curve of Josephson Junction in Stewart-McCumber Model (Stewart-McCumber Model에서 간섭전류에 의한 조셉슨접합의 I-V 특성 변화)

  • Hong, Hyun-Kwon;Kim, Kyu-Tae;Lee, Kie-Young
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.233-236
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    • 1999
  • To investigate the effect of interference current between pairs and quasi-particles, we have calculated the change I-V characteristic curve of resistively and capacitively shunted Josephson junction with external microwave by simulation of modified Stewart-McCumber model. Such rf-induced constant-voltage steps and the immunity against to noise were found to be changed in the presence of interference current.

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Comparison with Polarization Characteristic of Polymers

  • Choi, Chil-Nam;Yabg, Hyo-Kyung
    • Proceedings of the Korean Environmental Sciences Society Conference
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    • 2001.11a
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    • pp.188-190
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    • 2001
  • We carried out to measure the variations of potential with current density polymers. The results were particularly examined to identify the influences on corrosion potential and corrosion rate of various factors including temperature and pH. The Tafel slope for anodic dissolution was determined by the polarization effect depending on these conditions. The optimum conditions were established for each case. The second anodic current density peak and maximum passive current density were designated as the relative corrosion sensitivity($I_{r}I_{f}$). The mass transfer coefficient value (${\alpha}$) was determined with the Tafel slope for anodic dissolution based on the polarization effect with optimum conditions.

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Effects of Inter-phoneme Probabilities on the Acceptability Judgment of Korean CVC Nonwords

  • Lee, Yong-Eun
    • Speech Sciences
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    • v.14 no.4
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    • pp.41-52
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    • 2007
  • Recent experimental studies have shown that language-users' knowledge of the statistical characteristic of their native language plays a key role in their task performance. One specific instance of this that the current study focuses on is the effect of phonotactic probabilities on speakers' wordlikeness judgment of nonwords. In this paper, I explore the question of whether the judgment of Korean speaking subjects as to the wordlikeness of Korean nonsense words is influenced by the degree of association between two-phoneme sequences in Korean. The current results suggest that the objective measure of correlations (expressed by $r_{\phi}$ values) between an onset consonant and a vowel inside Korean syllables play an important role in Korean speakers' nonword processing. The current results additionally indicate an effect of the correlations of two-phoneme sequences including vowels and coda consonants on nonword processing. Implications of these findings for Korean speakers' learning the correlations between adjacent segments inside the syllable are discussed.

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Temperature Characteristics of Thermally Nitrided, Reoxidized MOS devices (열적으로 질화, 재산화된 모스 소자의 온도특성)

  • 이정석;장창덕;이용재
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1998.11a
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    • pp.165-168
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    • 1998
  • Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

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Signal Analysis of Motor Current for End Point Detection in the Chemical Mechanical Polishing of Shallow Trench Isolation with Reverse Moat Structure

  • Park, Chang-Jun;Kim, Sang-Yong;Seo, Yong-Jin
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.262-267
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    • 2002
  • In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

A New EST with Dual Trench Gate Electrode (DTG-EST)

  • Kim, Dae-Won;Sung, Man-Young;Kang, Ey-Goo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.2
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    • pp.15-19
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    • 2003
  • In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. Also the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/$\textrm{cm}^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/$\textrm{cm}^2$, respectively.

Non-contact critical current measurement of superconducting coated conductor using Hall Probe (Hall Probe를 이용한 초전도선재의 비접촉 임계전류 측정 방법)

  • Kim, Ho-Sup;Oh, Sang-Soo;Lee, Nam-Jin;Ha, Dong-Woo;Baik, Seung-Kyu;Ko, Rock-Kil;Ha, Hong-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.12-12
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    • 2010
  • The hall probe measurement system was used to measure the critical current distribution of superconducting coated conductor. The system consists of reel to reel moving apparatus, 7 array hall probe, a rotary encoder and permanent magnet. The magnetic field profile across the width of superconducting coated conductor using Bean's critical state model was calculated. The effect of various parameters of the formulas on the magnetic field distribution and the effect of shape and size of artificial defects, which were formed on the surface of SmBa2Cu3O7-d(SmBCO) coated conductor using laser marking system, on the hall probe magnetic field signal of the hall probe measurement system was investigated.

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A study of 1T-DRAM on thin film transistor (박막트랜지스터를 이용한 1T-DRAM에 관한 연구)

  • Kim, Min-Soo;Jung, Seung-Min;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.345-345
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    • 2010
  • 1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.

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Statistical Factor Analysis of Scanning Electron Microscope (주사전자 현미경의 통계적 인자 해석)

  • Kwon, Sang-Hee;Kim, Byung-Whan
    • Proceedings of the IEEK Conference
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    • 2009.05a
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    • pp.335-337
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    • 2009
  • A scanning electron microscope(SEM) is a system that visualizes complex surface features. The resolution of SEM is affected by each of equipment components. In this study, we examined the effects of the four factors including the beam current, magnification, voltage and working distance. A statistical analysis was conducted to investigate the main and interaction effects. For a systematic characterization, a $2^4$ full factorial experiment was conducted. The $R^2$ of constructed statistical model was 88.9%. The main effect revealed that the current and working distance are dominant factors. Of the interactions, those between the current and voltage yielded the highest interaction. 3D plots generated from the model were used to explore various parameter effects.

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