A study of 1T-DRAM on thin film transistor

박막트랜지스터를 이용한 1T-DRAM에 관한 연구

  • Published : 2010.06.16

Abstract

1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.

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