• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.617-621
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• 2013

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

• Journal of the Korean Academy of Clinical Electrophysiology
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• v.10 no.2
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• pp.37-42
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• 2012

Purpose : This study is to examine the effect of electrode size during transcranial direct current stimulation on hand function. Methods : By randomly assigning 26 right hand dominant subjects to two groups (I: carbon rubber electrode / II: disposable circular self-adhesive electrodes) with 13 subjects in each group depending on the electrode size, a positive electrodeof transcranial direct current stimulation was placed on the primary motor area (C4) and a negative electrode was placed on the left primary motor area (C3) and the stimulation was applied for 20 minutes.Hand function assessment before and after transcranial direct current stimulation were measured with JTT (Jebsen-Taylor hand function test). Results : According to hand function assessment by JTT, there were no interactions on both hands, and statistically significant differences according to time appeared in the main effect test. Conclusion : Regardless of the electrode size, it appears that transcranial direct current stimulation on the primary motor area activated hand function affected.

• The Korean Journal of Physiology and Pharmacology
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• v.22 no.5
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• pp.597-605
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• 2018

In this study, we demonstrated the inhibitory effect of the Class Ic antiarrhythmic agent propafenone on voltage-dependent $K^+$ (Kv) channels using freshly isolated coronary artery smooth muscle cells from rabbits. The Kv current amplitude was progressively inhibited by propafenone in a dose-dependent manner, with an apparent $IC_{50}$ value of $5.04{\pm}1.05{\mu}M$ and a Hill coefficient of $0.78{\pm}0.06$. The application of propafenone had no significant effect on the steady-state activation and inactivation curves, indicating that propafenone did not affect the voltage-sensitivity of Kv channels. The application of train pulses at frequencies of 1 or 2 Hz progressively increased the propafenone-induced inhibition of the Kv current. Furthermore, the inactivation recovery time constant was increased after the application of propafenone, suggesting that the inhibitory action of propafenone on Kv current is partially use-dependent. Pretreatment with Kv1.5, Kv2.1 or Kv7 inhibitor did not change the inhibitory effect of propafenone on the Kv current. Together, these results suggest that propafenone inhibits the vascular Kv channels in a dose- and use-dependent manner, regardless of $Na^+$ channel inhibition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.12
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• pp.602-607
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• 2003

We show three-dimensional distribution of voltages resulted from the leakage current originated from outdoor electrical facilities in a submerged area. In case these facilities are grounded by the neutral line multiple grounding method, the existence of ungrounded electrical facilities can cause a disastrous effect on near-by passengers. In order to investigate this situation, we installed a real-scale test field for the experiment type I (for the leakage current path between a enclosure grounded electrical facility and another enclosure grounded one), and that for the experiment type II (for the leakage current path between a enclosure grounded electrical facility and another ungrounded one). For both cases, we carried out three-dimensional monitoring of the voltage distribution while varying additional conditions such as the exposure of the underground cables and the finishing of cable connection part. The result shows that a disastrous effect on human safety can arise from the leakage current without a pertinent measure for the construction and maintenance of outdoor electrical facilities.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.103-107
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• 2016

In general, the voltage stability of induction generator is lower than synchronous generator. Induction generator has a number of advantages over the synchronous generator on the side of price and maintenance. So Induction generator has been applied to the small hydroelectric power of low output. Induction generator usually generates a high current during grid connection. The high current that occurs during grid connection can cause a voltage drop in the system. In order to increase the supply of the induction generator, it is necessary to propose a method of reducing high current. This paper proposes some method of the soft start to reduce voltage drop caused by the large starting current. soft-start method has high voltage drop effect than direct start method, control of firing angle can be increased the voltage drop effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.263-266
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• 2003

The gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. Next, the gate to drain current has been obtained with a ground source. The difference of two current has been tested and provide that the existence of another source to Schotuy barrier height against the image force lowering effect.

• Proceedings of the KIEE Conference
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• 2002.11b
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• pp.53-58
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• 2002

Sheath circulating current is increased as the change of sheath mutual impedance which is caused by imbalance of cable system, and different section length between joint box. If excessive current flows in sheath. sheath loss will be increased and then transmission capacity of underground transmission system is reduced. Accordingly, This paper proposed sheath current reduction device using resistor and reactor and proved the reduction effect of that device using EMTP/ATP. And also in this paper, when transients are occurred at the underground system with reduction device by ground fault and lightning surge. we analyzes transient effect of system variously. From this result. authors establish the protection methods of sheath circulating current reduction device.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.27-31
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• 2015

It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.10
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• pp.85-89
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• 2010

During a ground fault the maximum fault current and neutral to ground voltage will appear at the pole nearest to the fault. Distribution lines are consisted of three phase conductors, an overhead ground wire and a multi-grounded neutral line. In this paper phase to neutral faults were staged at the specified concrete pole along the distribution line and measured the ground fault current distribution in the ground fault current, three poles nearest to the fault point, overhead ground wire and neutral line. A effect by grounding resistance of poles of ground fault current in the 22.9[kV] multi-ground distribution system. by field tests.