• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.283-285
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• 1987

Transient conduction current (I - t characteristics) were measured in thin PPMMA (plasma-polymerized methyl methacrylate) films over the temperature range $60^{\circ}C-140^{\circ}C$ and the applied voltage range 3V - 30V. The current, which increased with temperature rise at constant applied voltage, showed less absorption current (current decay with time) at higher temperature region compared with those at lower temperature region. And the current, which increased with applied voltage rise at the constant temperature, showed less absorption current at higher voltage compared with those at lower voltage. The electric field current density characteristic curves were abtained from the conduction current values were after applying voltage for 30 minutes. And transient conduction currents were analyzed with high field conduction theories.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.43-46
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.119-122
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• 2005

A algorithm for control and performance of a pulse-density-modulated (PDM) series-resonant voltage source inverter developed for corona-dischange precesses is presented. The PDM inverter produces either a square-wave ac-voltage state or a zero-voltage state at its ac terminals to control the average output voltage under constant dc voltage and operating frequency. Moreover it can achieve zero-current-switching (ZCS) and zero-voltage-switching (ZVS) in all the operating condition for a reduction of switching lost. Even though the corona discharge load with a strong nonlinear characteristics, new high frequency resonant inverter is shown the wide range power control from 5% to 100%.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.4
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• pp.93-102
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• 1995

The purpose of this paper is to analyze the streaming electrification mechanism (SEM) generated in UHV transformer. This experiment used Couette Charger and interpreted the mechanism hydromechanically and electromagnetically. This work estimated the turbulent core density ($\rho$o) by measuring the short circuit current (isc) and the open circuit voltage (νoc) generated in Couette Charger and also studied the changes of the short circuit (isc), the open circuit voltage (νoc), the turbulent core density ($\rho$o) and the conductivity ($\sigma$) with adding BTA to restrain streaming electrification. as a result adding BTA increased the conductivity of oil and decreased the turbulent core density($\rho$o).

• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.699-706
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• 2016

Partial discharges (PD) lead to the degradation of high voltage cables and accessories. PD activities occur due to the existence of impurities, voids, contaminants, defects and protrusions during the manufacture and installation of power cables. Commonly, insulation failures occur at cable joints and terminations, caused by inhomogeneous electric field distributions. In this work, a blend of natural rubber (NR) and linear low density polyethylene (LLDPE) was investigated, and the optimal formulation of the blend that could resist PD was discussed. The experiments were conducted under a constant high voltage stress test of 6.5 kV AC and the magnitude of partial discharge activities was recorded using the CIGRE method II. Pattern analysis of PD signals was performed along with the interpretation of morphological changes. The results showed that the addition of 10 wt% of NR and 5 wt% of Alumina Trihydrate (ATH) provided promising results in resisting PD activities. However, as the NR content increased, more micropores existed, thus resulting in increased PD activities within the samples.

• Progress in Superconductivity
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• v.4 no.1
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• pp.59-63
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• 2002

10-V Josephson junction array arranged in 8 parallel stripline paths was fabricated using self-aligning and reactive ion etching techniques. These techniques were introduced in detail with aim of obtaining high-quality junctions. The array has 18,184 Josephson junctions with the area of $12\mu\textrm{m}$$\times$$38\mu\textrm{m}$. The gap voltage and minimum critical current density were about 2.7 ㎷ and ／$23 A\textrm{cm}^2$, respectively. And the critical current density and leakage current at 5 volt were about 27 $A／\textrm{cm}^2$ and $5\mu\textrm{A}$, respectively When operated in the frequency range of 76-88 ㎓, the away generated constant voltage steps up to 14-19 V. The step size near 10-V was more than 7 $\mu\textrm{A}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.523-526
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• 2000

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.912-917
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• 2006

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• 전기의세계
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• v.31 no.3
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• pp.197-203
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• 1982

The effects on the characteristics of 20-W fluorescent lamp were studied when applying magnetic field to its positive column. First, when the direction of the magnetic field is axial, i.e., along the lamp, if the magnitude of the field is stronger than the critical field, lamp voltage is increased, lamp current decreased, luminous flux increased, starting voltage decreased, as increasing the applied magnetic field. At the magnetic flux density is 130 gauss, luminous flux is increased to about 6 percents and starting voltage is increased to about 45 percents. Second, when the direction of the magnetic field is transverse to the lamp axis, as increasing the applied magnetic field, lamp voltage is increased, lamp current decreased, luminous flux increased and starting voltage is nearly constant, but the rates of increase or decrease of this case is different from those of the first. At the magnetic flux density is 300 gauss, luminous flux is increased about 45 percents. In both cases, electric power dissipated by lamps is the same as that of the lamp which magnetic field is not applied to.