• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.59-65
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• 1998

In this paper, a novel rail-to-rail input stage circuit with improved transconductance Is designed. Its excellent performances over whole common-mode input voltage Vcm range is demonstrated by circuit simulator HSPICE. The novel input stage circuit comprises additional 4 input transistors and 4 current sources/sinks. It maintains DC currents of signal amplifying transistors when one of the differential input stage circuits operates, but it reduces these currents to 1/4 when both differential input stage circuits operates, As a result, a operational amplifier with the novel circuit maintains nearly constant transconductance performance and unity-gain frequency in strong inversion region. The novel circuit allows an optimal frequency compensation and uniform operational amplifier performance over whole Vcm range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.77-82
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• 2006

Analog channel selection filter is described which is designed for a direct-conversion receiver of a IEEE 802.11a wireless LAN. The channel selection filter is an active-RC fifth-order Chebyshev filter with 10MHz cut-off frequency. Two-stage operational amplifier of the filter employs a current re-using feedforward frequency compensation scheme to minimize the power consumption. The filter has been implemented in a 0.18mm CMOS technology and the experimental results show 20mW power consumption with 1.8V supply voltage and 19dB out-of-band iIP3.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.1
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• pp.147-152
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• 2008

This paper has been fabricated the two different type of variable attenuators using a characteristics of a 3 dB directional coupler and pin diodes. One was not analyzed using the conventional even-odd modes but used simple two-port techniques. The resulting scattering parameters described operation characteristics for the general case where the terminating impedances are equal and unequal. After analyzing resistor role of the ${\pi}$ type fixed attenuator. this paper used a pin diode instead of a resistor. The variable attenuators were fabricated using pin diodes for current-controlled attenuation on the coupled ports of a 3 dB branch-line coupler and ${\pi}$ type fixed attenuator. The realized variable attenuators have more than 33 dB attenuation ranges at 2.1 GHz. and the input and output reflection coefficients are less than -13 dB. These results could be applied to mobile communication systems. It can be varied gain of the power amplifier according to change a outdoor environmental temperature and improved linearity.

• Progress in Medical Physics
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• v.16 no.3
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• pp.155-159
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• 2005

As a part of implantable device in body, a transcutaneous energy transmission system has been developed. It would be desirable to tansfer electrical energy to implantable devices transcutaneously. The distance between transcutaneous transformer windings are approximately equal to the thickness of the human's skin, nominally between 10$\~$20 mm. Class-E resonant amplifier is used to drive a primary coil for high efficiency. Maximum current is above 50 mA at any frequency. The developed system shows that the circuit operates correctly at each frequency; 500 kHz, 1 MHz and 4 MHz.

• Annual Conference of KIPS
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• 2005.05a
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• pp.1641-1644
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• 2005

현재의 인터넷과 같은 전자 통신망과 멀티미디어 시스템의 발달은 고속의 대용량 데이터 전송을 필요로 한다. 초고속 통신 시스템에서의 고속 데이터 전송은 주로 광섬유를 사용하는 광통신으로 이루어지고 있다. FTTH(Fiber To The Home)와 같은 광통신 시스템은 멀티미디어 커뮤니케이션을 위해 필요한 큰 데이터 전송률을 제공할 수 있기 때문에 더욱 더 중요성이 높아지고 있으며 이러한 광통신 시스템에서는 통신환경의 영향을 적게 받고 외부 조절이나 부품이 필요하지 않는 수신기 IC 의 개발이 요구되고 있다. 일반적으로 광통신 수신기에는 고속 동작에 적합한 특성을 가진 GaAs-MESFET 가 사용되고 있으나, 본 논문에서는 0.35um CMOS 2-poly 4-metal 공정을 이용하여 5Gbps 광수신기를 설계하였다. 설계된 수신기는 Preamplifier, Main amplifier, ABC 회로로 구성되어 있다. Transimpedance amplifier 형태의 Preamplifier 는 광검출기에 의해 생성된 전류 신호를 전압 신호로 변환한다. ABC 회로는 Peak_Hold 회로와 Bottom_Hold 회로로 구성되어 있다. 기존의 Peak_Hold 회로에서는 다이오드와 hold capacitor 를 이용하여 peak 값을 검출하도록 되어 있는데, 다이오드를 이용하는 경우 작은 입력 신호전압의 Peak 값을 검출하는 데 한계가 있다. 이러한 단점을 보완하고자 전류 거울형태의 Peak_Hold 회로를 설계하였다. 전류거울(current mirror)형태의 출력 신호의 duty error 를 줄이고 비트 에러율(Bit Error Rate)을 개선하는데 효과적이었다. 설계된 광수신기는 30dB 의 입력 dynamic range 와 입력 capacitance 3pF 에서 80MHz 의 대역폭을 가진다. 전력 소비량은 3.3V 전원 전압이 인가된 경우 약 150mW 정도이다.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.553-554
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• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.443-450
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• 2016

The linearization technique for low noise amplifier (LNA) has been implemented in standard $0.18-{\mu}m$ BiCMOS process. The MOS-BJT derivative superposition (MBDS) technique exploits a parallel LC tank in the emitter of bipolar transistor to reduce the second-order non-linear coefficient ($g_{m2}$) which limits the enhancement of linearity performance. Two feedback capacitances are used in parallel with the base-collector and gate-drain capacitances to adjust the phase of third-order non-linear coefficients of bipolar and MOS transistors to improve the linearity characteristics. The MBDS technique is also employed cascode configuration to further reduce the second-order nonlinear coefficient. The proposed LNA exhibits gain of 9.3 dB and noise figure (NF) of 2.3 dB at 2 GHz. The excellent IIP3 of 20 dBm and low-power power consumption of 5.14 mW at the power supply of 1 V are achieved. The input return loss ($S_{11}$) and output return loss ($S_{22}$) are kept below - 10 dB and -15 dB, respectively. The reverse isolation ($S_{12}$) is better than -50 dB.

• ETRI Journal
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• v.30 no.4
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• pp.526-534
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• 2008

This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

• Current Optics and Photonics
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• v.5 no.2
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• pp.141-146
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• 2021

We have evaluated the suppression effect of atmospheric-turbulence-induced optical scintillation in terrestrial free-space optical (FSO) communication systems using a gain-saturated erbium-doped fiber amplifier (EDFA). The variation of EDFA output signal power has been measured with different amounts of gain saturation and modulation indices of the optical input signal. From the measured results, we have found that the peak-to-peak power variation was decreased drastically below 2 kHz of modulation frequency, in both 3-dB and 6-dB gain compression cases. Then, the power spectral density (PSD) of optical scintillation has been calculated with Butterworth-type transfer function. In the calculation, different levels of atmospheric-turbulence-induced optical scintillation have been taken into account with different values of the Butterworth cut-off frequency. Finally, the suppression effect of optical scintillation has been estimated with the measured frequency response of the EDFA and the calculated PSD of the optical scintillation. From our estimated results, the atmospheric-turbulence-induced optical scintillation could be suppressed efficiently, as long as the EDFA were operated in a deeply gain-saturated region.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.