Electronics and Telecommunications Trends (전자통신동향분석)

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Technical Trends in Next-Generation GaN RF Power Devices and Integrated Circuits

차세대 GaN RF 전력증폭 소자 및 집적회로 기술 동향

  • Published : 2019.10.01
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Abstract

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

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References

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