• Smart Structures and Systems
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• v.17 no.2
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• pp.327-345
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• 2016

The existence of SH-wave in a piezomagnetic layer overlying an initially stressed orthotropic half-space is investigated. The coupled of differential equations are solved for piezomagnetic layer overlying an orthotropic elastic half-space. The general dispersion equation has been derived for both magnetically open circuit and magnetically closed circuits under the four types of boundary conditions. In the absence of the piezomagnetic properties, initial stress and orthotropic properties of the medium, the dispersion equations reduce to classical Love equation. The SH-wave velocity has been calculated numerically for both magnetically open circuit and closed circuits. The effect of initial stress and magnetic permeability are illustrated by graphs in both the cases. The velocity of SH-wave decreases with the increment of wave number.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.130-135
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• 2003

Low dielectric constant SiOC(-H) films have been prepared by inductively coupled plasma chemical vapor deposition using bis-trymethylsilyl-methane (BTMSM) and $O_2$ precursors. The annealing effects on the structural and electrical properties were studied. The results indicate post-annealing could efficiently remove the hydroxyl (-OH) related groups from the as-deposited films and cause the chemical structure re-arrangement, resulting in the more nano-pores being formed in the annealed SiOC(-H) films. The dielectric constant decreased from 2.7 to 2.1, and the refractive index decreased from 1.427 to 1.32.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.145-150
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• 2014

MgO thin films were deposited by internal ICP-assisted reactive-magnetron sputtering with bipolar pulse bias on a substrate to suppress random arcs. Mg is reactively sputtered by a bipolar pulsed DC power of 100 kHz into ICP generated by a dielectrically shielded internal antenna. At a mass flow ratio of $Ar/O_2$ = 10 : 2 and an ICP/sputter power ratio of 1 : 1, optimal film properties were obtained (a powder-like crystal orientation distribution and a RMS surface roughness of approximately 0.42 nm). A bipolar pulse substrate bias at a proper frequency (~a few kHz) prevented random arc events. The crystalline preferred orientations varied between the (111), (200) and (220) orientations. By optimizing the plasma conditions, films having similar bulk crystallinity characteristics (JCPDS data) were successfully obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.39-42
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• 2000

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.26-29
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• 1992

In this study, We made use of interelectrode capacitively coupled type plasma polymerization apparatus in order to make th organic optical thin films. We adopted in Benzen. Styrene, which have optical function in the organic world. It is manufactured polymerization thin films and examined optics properties by it respectively. We have known that the refractive index decreased as discharging power increased. At the middle wave length as 550[nm], the refractive index of Styrene is smaller than one of Benzen. Then, it is known that measured results are valid because the extinction coefficient(K) is about 10$\^$-4/ for variation of refractive index.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1430-1432
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1189-1192
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• 1993

Organic thin films were fabricated an using interelectrode capacitively coupled type plasma polymerizaion apparatus, and their optical properties were investigated. A deposition rate of styrene thin films is linearly increased, but one or vinyl-pyridine thin films is nonlinearly increased with increasing of polymerization time, pressure and monomer flow rate. The transmittance of single layer thin films is constant, but that of multi-layer appeared irregular peak with increasing of the number of layers. And then the refractive index of organic thin films is various from 1.55 to 1.65 with wavelength, the extinction coefficient indicated $10^{-3}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.460-463
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• 2003

We report the microwave reflection coefficient $S_{11}$ of copper(II)-phthalocyanine(CuPc) using a near-field microwave microscope(NSMM) in order to understand the intrinsic electromagnetic properties of organic materials. For a NSMM system, a high-quility microstip resonator coupled with a dielectric resonator was used. The reflection coefficient $S_{11}$ was changed by the preparation conditions of CuPc thin films. We compared the reflection coefficient with crystal phase, surface morphology, UV absorption spectra and x-ray diffraction results.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11b
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• pp.745-749
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• 2001

The rigid body properties of a structure may be estimated easily if the mass-line of the structure could be taken exactly. However, the exact mass-line cannot be obtained experimentally. In the past years, the modal analysis for which the structure is mounted on the flexible supporter is frequently used to acquire the mass-line. Unfortunately, it is difficult not only to mount the structure but also to decouple the coupled 6 dof mode. If the structure is pended by very long and flexible rope to act free, the rigid-body modes influenced by the rope will be eliminated and the improved mass-line will be obtained. In this paper, the method using the mass-line of F.R.F. for rigid body in free-condition is suggested. The robustness of the suggested method was tested and verified numerically. The experimental results also showed a good agreement with the true value.