The Characteristics of Dielectric Properties of SiOC(-H) film with the Variation of Dielectric Components on SiOC Structure

Low dielectric constant SiOC(-H) films have been prepared by inductively coupled plasma chemical vapor deposition using bis-trymethylsilyl-methane (BTMSM) and $O_2$ precursors. The annealing effects on the structural and electrical properties were studied. The results indicate post-annealing could efficiently remove the hydroxyl (-OH) related groups from the as-deposited films and cause the chemical structure re-arrangement, resulting in the more nano-pores being formed in the annealed SiOC(-H) films. The dielectric constant decreased from 2.7 to 2.1, and the refractive index decreased from 1.427 to 1.32.