• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.161-165
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• 2002

Ge-doped rnulticomponent oxide glasses were prepared by a conventional melting method. The change of micro structure in glasses was investigated by using PL (photoluminescence) and ESR (electron spin resonance). Before UV irradiation, the PL intensity increased according to germanium contents, but decreased the intensity as soon as UV irradiation. A changed property was recovered near it original properties when it was annealed. These photodarkening and thermal bleaching effect were observed by ESR intrument. These effect did not change the glass phase but vary only change of micro structure.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.53.2-53.2
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• 2011

Dye-sensitized solar cells(DSSCs) have been recognized as an alternative to the conventional p-n junction solar cells because of their simple fabrication process, low production cost, and transparency. A typical DSSC consists of a transparent conductive oxide (TCO) electrode, a dye-sensitized oxide semiconductor nanoparticle layer, liquid redox electrolyte, and a Pt-counter electrode. In dye-sensitized solar cells, charge recombination processes at interfaces between coducting glass, $TiO_2$, dye, and electrolyte play an important role in limiting the photon-to-electron conversion efficiency. A layer of ZTO thin film less than ~200nm in thickness, as a blocking layer, was deposited by DC magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells(DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/I_3^-$). The presented DSCs were fabricated with working electrode of Ga-doped ZnO glass coated with blocking ZTO layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited GZO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.134-135
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• 2008

Ultra-thin $SiO_2/ZrO_2$ dielectrics were deposited by atomic layer chemical vapor deposition (ALCVD) method for non-volatile memory application. Metal-oxide-semiconductor (MOS) capacitors were fabricated by stacking ultra-thin $SiO_2$ and $ZrO_2$ dielectrics. It is found that the tunneling current through the stacked dielectric at the high voltage is lager than that through the conventional silicon oxide barrier. On the other hand, the tunneling leakage current at low voltages is suppressed. Therefore, the use of ultra-thin $SiO_2/ZrO_2$ dielectrics as a tunneling barrier is promising for the future high integrated non-volatile memory.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Nuclear Engineering and Technology
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• v.55 no.10
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• pp.3844-3853
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• 2023

Although radiation and chemotherapy methods for cancer therapy have advanced significantly, surgical resection is still recommended for most cancers. Therefore, intraoperative imaging studies have emerged as a surgical tool for identifying tumor margins. Intraoperative imaging has been examined using conventional imaging devices, such as optical near-infrared probes, gamma probes, and ultrasound devices. However, each modality has its limitations, such as depth penetration and spatial resolution. To overcome these limitations, hybrid imaging modalities and tracer studies are being developed. In a previous study, a multi-modal laparoscope with silicon photo-multiplier (SiPM)-based gamma detection acquired a 1 s interval gamma image. However, improvements in the near-infrared fluorophore (NIRF) signal intensity and gamma image central defects are needed to further evaluate the usefulness of multi-modal systems. In this study, an attempt was made to change the NIRF image acquisition method and the SiPM-based gamma detector to improve the source detection ability and reduce the image acquisition time. The performance of the multi-modal system using a complementary metal oxide semiconductor and modified SiPM gamma detector was evaluated in a phantom test. In future studies, a multi-modal system will be further optimized for pilot preclinical studies.

• Journal of Soil and Groundwater Environment
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• v.12 no.5
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• pp.115-123
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• 2007

Immobilization of contaminants in subsurface environment is one of the major processes that determine their fate. Especially, immobilization by oxidative-coupling reactions, which is irreversible in the bio-chemical reactions and results in a significant reduction of toxicity, can be successfully applied for the remediation of contaminated soil and groundwater more effectively than conventional degradation. As a catalyst of this oxidative-coupling reaction, manganese oxide has many advantages in practical aspects as compared to microorganisms or oxidoreductive enzymes extracted from microorganisms, fungi, or plants. This paper is to present recent research achievements on the treatment mechanisms of various organic contaminants by manganese oxide. Especially, treatment methods of non-reactive organic compounds to Mn oxide are the main focus; i.e., application of reaction mediator, PAHs treatment method, combination with an appropriate pretreatment such as reduction using $Fe^0$, which suggests the potential of a wide range of engineering application. Concerning the natural carbon cycle processes, immobilization and stabilization by oxidative coupling reaction can be effectively applied as a environmentally-friend remediation method especially for aromatic contaminants which possess a high resistance to degradation.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.28-32
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• 2003

Europium-doped gadolinium oxide ($Gd_2O_3;Eu^{3+}$) phosphors have been prepared by combustion method using urea[H$_2$NCONH$_2$] or carbohydrazide[H$_2$NNHCONHNH$_2$] as fuel materials in a preheated furnace at 500$^{\circ}C$. The phosphors obtained were fired at 1200$^{\circ}C$ for 3 hours to get better luminescent properties. The combustion method used was found to be a simple and fast method for the preparation of fine-sized particles. The influence of the fuel/oxidant (urea or carbohydrazide/nitrate) mole ratio on the phosphor has been investigated and the optimum values for various parameters have been determined. By this method, phosphor that has better brightness and smaller size particles than that obtained by conventional method has been prepared.d has been prepared.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.70-76
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• 1987

The effect of C12A7 and OH group on the synthesis of C3A by the sol-gel process using aluminum-sec-butoxide and calcium nitrate was studied. C3A by sol-gel method was compared with C3A obtained by the conventional method with respect to their reactivity of formation and crystal size. The sol-gel process for initial formation of C12A7 and C3A at lower temperature (1100, 1200$^{\circ}C$) was superior, but that for complete crystallization of C3A at higher temperature (1300, 1400$^{\circ}C$) was inferior to oxide mixture process. When heat treated under the atmosphere oxygen-free dried nitrogen eliminate the influence of OH group in C12A7, the reactivity of C3A from sol-gel sample incorporated OH group were poor, whereas that from oxide mixture sample showed remarkable effect. The poor crystallization of C3A at higher temperature is presumed to be due to the fact that incorporated OH group in C12A7 formed at lowr temperature might interrupt the diffusion of CaO to C12A7 to from C3A. The crystal size and the hydration characteristics of both C3A obtained by different processes exhibited almost the same results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.1016-1022
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• 2010

An Experimental study of cleaning solution has been performed on a high capacity steam boiler burning heavy fuel oil to on-line cleaning of deposit. The deposit is mixture of soot, slag, ash, metal oxide and clinker. The traditional technology of deposit cleaning was carried hand-crafted. The conventional technology of boiler cleaning method is mechanical removal by the worker while the boiler shut down operation. In this experiment, the deposit of mixture of soot, slag, ash, metal oxide and clinker has been removed by the cleaning agents without shut down of boiler burning. This study found out the optimum cleaning solution composition. The best results have been obtained when the mixture of ammonium nitrate and $MgNO_3$ were used in cleaning solution. The various transition metal effect was investigated for optimum mixing condition. In this research, the metal compound additive of the clean solution compoition was obtained. The combustion efficiency was improved by on-line cleaning with derived clean solution compoition. On-line cleaning method prevents the fouling and corrosion in the boiler and heat exchanger.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.