• 전자공학회논문지D
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• 제34D권1호
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• pp.35-40
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• 1997

A new method to form the gate oxide and recrystllize the polycrystalline silicon (poly-Si) active layer simultaneously is proposed and fabricated successfully. During te irradiation of excimer laser, the poly-Si film is recrystallized, while the oxygen ion impurities injected into the amorphous silicon(a-Si) film are activated by laser energy and react with silicon atoms to form SiO2. We investigated the characteristics of the sample fabricated by proposed method using AES, TEM, AFM. The electrical performance of oxide was verified by ramp up voltage method. Our experimental results show that a high quality oxide, a pol-Si film with fine grain, and a smooth and clean interface between oxide and poly-Si film have been successfully obtained by the proposed fabrication method. The interface roughness of oxide/poly-Si fabricated by new method is superior to film by conventional fabrication os that the proposed method may improve the performance of poly-Si TFTs.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.158-164
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• 1995

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.741-746
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• 2009

Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

• 한국표면공학회지
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• 제53권5호
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• pp.249-256
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• 2020

As the size of manufacturing equipment for LCD and OLED displays increases, replacement of existing heavy stainless steel components with light metals, such as aluminum alloys, is being more important in semiconducting and display manufacturing industries. To use aluminum alloys for components in semiconducting and display industries, it is important to develop a new anodization method for improved performance of anodic oxide films than conventional anodization method based on sulfuric acid. In this work, optimum applied current density and the best sealing methods for anodic oxide films in 3% oxalic acid were explored. Experimental results showed 2.5 A/dm2 is the best applied current density for improved hardness and dielectric breakdown voltage. Sealing of the anodic oxide films further improved their hardness, dielectric breakdown voltage and resistance to HCl, by which application of anodic oxide films become applicable for components in semiconducting and display industries.

• 한국재료학회지
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• 제28권9호
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• pp.495-498
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• 2018

Intermetallic compound matrix composites have been expected to be established as high temperature structural components. $Ni_3Al$ is a representative intermetallic alloy, which has excellent ductility even at room temperature by adding certain alloying elements. $Ni_3Al$ matrix composites with aluminum oxide particles, which are formed by the in-situ reaction between the alloy and aluminum borate whiskers, are fabricated by a powder metallurgical method. The addition of aluminum borate whiskers disperses the synthetic aluminum oxide particles during sintering and dramatically increases the strength of the composite. The uniform dispersion of reaction synthesized aluminum oxide particles and the uniform solution of boron in the matrix seem to play an important role in the improvement in strength. There is a dramatic increase in strength with the addition of the whisker, and the maximum value is obtained at a 10 vol% addition of whisker. The $Ni_3Al$ composite with 10 vol% aluminum oxide particles $0.3{\mu}m$ in size and with 0.1 wt% boron powder fabricated by the conventional powder metallurgical process does not have such high strength because of inhomogeneous distribution of aluminum oxide particles and of boron. The tensile strength of the $Ni_3Al$ with a 10 vol% aluminum borate whisker reaches more than twice the value, 930 MPa, of the parent alloy. No third phase is observed between the aluminum oxide and the matrix.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• 한국세라믹학회지
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• 제24권3호
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• pp.257-262
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• 1987

The characteristics of cobalt oxide powders prepared by hot petroleum drying method from the cobalt acetate were evaluated by DTA/TGA, XRD, BET, SEM and density measurement. The cobalt oxide powder could be prepared by hot petroleum drying of the emulsion of cobalt acetate salt solution and the subsequent thermal decomposition of the acetate at 300$^{\circ}C$. As the concentration of the salt solution and the calcination temperature of the dried powder increased, the surface area of the synthesized powder decreased due to the particle growth, so that after sintering the density and grain size decreased. For the same concentration of the salt solution, the surface area and sinterability of the powder by hot petroleum drying increased in comparision with those by conventional drying.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.296-297
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• 2006

A conventional oxide method was used to fabricate $Ba_{0.5}Sr_{0.5}TiO_3$(BST) ceramic plates doped by MgO from 10 to 60 wt%. The structural and dielectric properties of BST were investigated as a fraction of MgO dopant concentration. The dielectric properties of the MgO doped BST were strongly dependent on the MgO contents. The dielectric constant and dielectric loss of MgO doped BST decreased with increasing MgO content.