• 제목/요약/키워드: continuity simulation

검색결과 253건 처리시간 0.024초

트랜스 미션에 유압식 콘트롤밸브의 설계와 시뮬레이션 (A design and simulation of a hydraulic control valve in transmission)

  • 곽희성
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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    • pp.167-174
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    • 1997
  • In this paper, the mathematical model of the hydraulic control valve is formulated, that is, this dynamic modeling which includes the motion equations and continuity equations can analyze the dynamic characteristics of the hydraulic control valve. The control valve for the transmission has the Over Speed Protection to protect a hydraulic travel motor. Therefore, this simulation shows the over speed protection and researches the main design parameters. The results of the computer simulation were assured through the experiment. From the comparison between both results, it is shown that this simulation program is useful and effective.

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Simulation of Moving Storm in a Watershed Using Distributed Models

  • Choi, Gye-Woon;Lee, Hee-Seung;Ahn, Sang-Jin
    • Korean Journal of Hydrosciences
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    • 제5권
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    • pp.1-16
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    • 1994
  • In this paper distributed models for simulating spatially and temporally varied moving storm in a watershed were developed. The complete simulation in a watershed is achieved through two sequential flow simulations which are overland flow simulation and channel network flow simulation. Two dimensional continuity equation and momentum equation of kinematic approximation were used in the overland flow simulation. On the other hand, in the channel network simulation two types of governing equations which are one dimensional continuity and momentum equations between two adjacent sections in a channel, and continuity and energy equations at a channel junction were applied. The finite difference formulations were used in the channel network model. Macks Creek Experimental Watershed in Idaho, USA was selected as a target watershed and the moving storm on August 23, 1965, which continued from 3:30 P.M. to 5:30 P.M., was utilized. The rainfall intensity fo the moving storm in the watershed was temporally varied and the storm was continuously moved from one place to the other place in a watershed. Furthermore, runoff parameters, which are soil types, vegetation coverages, overland plane slopes, channel bed slopes and so on, are spatially varied. The good agreement between the hydrograph simulated using distributed models and the hydrograph observed by ARS are Shown. Also, the conservations of mass between upstreams and downstreams at channel junctions are well indicated and the wpatial and temporal vaiability in a watershed is well simulated using suggested distributed models.

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Ductile fracture simulation using phase field approach under higher order regime

  • Nitin Khandelwal;Ramachandra A. Murthy
    • Structural Engineering and Mechanics
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    • 제89권2호
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    • pp.199-211
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    • 2024
  • The loading capacity of engineering structures/components reduces after the initiation and propagation of crack eventually leads to the final failure. Hence, it becomes essential to deal with the crack and its effects at the design and simulation stages itself, by detecting the prone area of the fracture. The phase-field (PF) method has been accepted widely in simulating fracture problems in complex geometries. However, most of the PF methods are formulated with second order continuity theoryinvolving C0 continuity. In the present study, PF method based on fourth-order (i.e., higher order) theory, maintaining C1 continuity has been proposed for ductile fracture simulation. The formulation includes fourth-order derivative terms of phase field variable, varying between 0 and 1. Applications of fourth-order PF theory to ductile fracture simulation resulted in novelty in this area. The proposed formulation is numerically solved using a two-dimensional finite element (FE) framework in 3-layered manner system. The solutions thus obtained from the proposed fourth order theory for different benchmark problems portray the improvement in the accuracy of the numerical results and are well matched with experimental results available in the literature. These results are also compared with second-order PF theory and a comparison study demonstrated the robustness of the proposed model in capturing ductile behaviour close to experimental observations.

분포형 모델을 이용한 유역내 이동강우(MOVING STORM)의 유출해석(1) -모델의 개발- (Simulation of Moving Storm in a Watershed Using A Distributed Model -Model Development-)

  • 최계원;이희성;안상진
    • 물과 미래
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    • 제25권1호
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    • pp.101-110
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    • 1992
  • 유역내 공간적 및 시간적 분포특성을 가진 이동강우를 해석하기 위하여 분포형 모델을 개발하였으며 이 유역모델은 지표면 흐름과 하천망 흐름으로 나누어 유출을 해석하였다. 지표면의 흐름은 2차원의 연속방정식과 운동량 방정식을 이요하였는데 kinematic 이론을 도입하여 운동량 방정식을 간략화 하였으며 하천망 흐름은 하천망을 일체로 하여 1차원의 연속방정식과 운동량방정식들을 이용하였다. 기본방정식들의 수치해석법으로 지표면의 흐름은 유한요소법을 이용하였으며 하천망에 대한 해석은 음해법의 유한차분법을 이용하였다. 모델은 특히 이동강우에 있어서 중요한 특색인 공간적 및 시간적 특성을 효과적으로 해석할 수 있도록 개발되었다. 또한 모델은 구성된 행렬의 특징을 이용하였는데, 지표면 유출모델은 Gauss 소거법을 이용하여 그해를 구하였으며 하천망 해석은 double sweep 방법을 적용하기 위한 여러 종류의 순환계수방정식을 제안하였고 이를 이용하여 그 해를 구하였다.

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3차원 와전류문제의 유한요소해석에서 쿨롱게이지조건과 전류연속조건의 영향 (Effects of Coulomb Gauge Condition and Current Continuity Condition on 3-Dimensional FE Analysis for Eddy Current Problems)

  • 이향범
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제54권10호
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    • pp.483-491
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    • 2005
  • To solve the 3D eddy current problems by using FE(finite element) method with MVP(magnetic vector potential) and electric scalar potential, Coulomb gauge condition and current continuity condition have to be considered. Coulomb gauge condition enforced on existing FE formulations to insure the uniqueness of MVP looks unnatural and current continuity condition which can be driven from Ampere's law looks unnecessary. So in this paper the effect of two conditions on FE formulations are investigated in order to help to obtain accurate numerical simulation results.

Resource Reservation to Support Service Continuity in OFDMA Systems

  • Lee, Jongchan;Lee, Moonho
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제8권12호
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    • pp.4356-4371
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    • 2014
  • When the load in a multi-cell orthogonal frequency division multiple access (OFDMA) system is allowed to excessively increase in face of frequent handover, the cell area becomes smaller than the designed size, and thus continuity of quality of service (QoS) for handover requests cannot be guaranteed. To efficiently support the mobility of a mobile terminal (MT), we should adaptively cope with the resource demand of handover calls. This paper proposes a twofold resource-reservation scheme for OFDMA systems to guarantee continuity of QoS for various mobile multimedia services during MT handover from lightly to heavily loaded cells. Our twofold scheme attempts to guarantee service continuity for handover and to maximize resource allocation efficiency. We performed a simulation to evaluate our scheme in terms of outage probability, handover failure rate, total throughput, and blocking rate.

Pt-GaAs Schottky Barrier Diode의 Computer Simulation (Computer Simulation of Pt-GaAs Schottky Barrier Diode)

  • 윤현로;홍봉식
    • 대한전자공학회논문지
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    • 제27권3호
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    • pp.101-107
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    • 1990
  • 본 논문에서 유한차분법을 이용하여 Pt-GaAs Schottky Barrier Diode(SBD)를 일차원으로 simulation하였다. 반도체의 지배방정식인 포아송 방정식(poisson equation)과 전류연속 방정식)current continuity equation)을 이산화 시킨 다음 Newton-Raphson 방법으로 선형화시켜서 가우스 소거법으로 해가 수렴할 때까지 반복적으로 풀었다. 이 SBD의 해석에 필요한 경계조건은 열전자방출-확산이론(thermionic emission-diffusion theory)으로부터 Schottky Barrier의 경계조건을 취하였다. 에피층을 갖는 SBD를 모델링하여 인가전압에 따른 다이오드에서의 전위와 전자의 분포를 simulation 하였다. 전위에 따라 변하는 접속층을 고려하여 실험치와 잘 일치하는 결과를 얻었다.

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3차원 정상상태의 드리프트-확산 방정식의 해석 프로그램 개발 (A development of the 3-dimensional stationary drift-diffusion equation solver)

  • 윤현민;김태한;김대영;김철성
    • 전자공학회논문지D
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    • 제34D권8호
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    • pp.41-51
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    • 1997
  • The device simulator (BANDIS) which can analyze efficiently the electrical characteristics of the semiconductor devices under the three dimensional stationary conditions on the IBM PC was developed. Poisson, electon and hole continuity equations are discretized y te galerkin method using a tetrahedron as af finite element. The frontal solver which has exquisite data structures and advanced input/output functions is dused for the matrix solver which needs the highest cost in the three dimensional device simulation. The discretization method of the continuity equations used in BANDIS are compared with that of the scharfetter-gummel method used in the commercial three-dimensional device. To verify an accuracy and the efficiency of the discretization method, the simulation results of the PN junction diode and the BJT from BANDIS are compared with those of the commercial three-dimensiional device simulator such as DAVINCI. The maximum relative error within 2% and the average number of iterations needed for the convergence is decreased by more than 20%. The total simulation time of the BJT with 25542 nodes is decreased to about 60% compared with that of DAVINCI.

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시간 연속성을 갖는 비음수 행렬 분해를 이용한 음질 개선 (Speech Enhancement Using Nonnegative Matrix Factorization with Temporal Continuity)

  • 남승현
    • 한국음향학회지
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    • 제34권3호
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    • pp.240-246
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    • 2015
  • 본 논문은 시간 연속성을 갖는 비음수 행렬 분해(Nonnegative Matrix Factorization, NMF)를 이용하여 잡음에 열화된 음성 신호의 음질을 개선하는 문제를 다룬다. 음성과 잡음 신호는 포아송 분포로 모델되며, NMF의 기본 벡터와 이득 벡터는 감마 분포로 모델된다. 이득 벡터의 시간 연속성은 음질 개선에 중요한 영향을 미치는 것으로 알려져 있다. 본 논문에서 시간의 연속성은 이득 벡터를 감마-마르코프 연쇄(Gamma-Markov chain, GMC) 사전 분포로 모델함으로써 이루어진다. 실험 결과는 제안된 알고리즘이 잡음 신호의 시간 연속성을 효과적으로 모델하는 것을 보여준다.

放射線이 照射된 MIS capacitor의 電荷 蓄積 및 flat band 전압 이동에 대한 實驗 및 數値的 硏究 (Experiments & numerical analysis of charge accumulation and flat band voltage shifts in irradiated MIS capacitor)

  • 황금주;김홍배;손상희
    • 대한전기학회논문지
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    • 제44권4호
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    • pp.483-489
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    • 1995
  • To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

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