• Korean Journal of Food Science and Technology
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• v.28 no.6
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• pp.1026-1032
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• 1996

The effects of steeping temperature $(7^{\circ},\;15^{\circ},\;20^{\circ}\;and\;30^{\circ}C)$ and steeping time $(2{\sim}14\;hr)$ on the physicochemical properties of milled rice (variety; Chucheongbyeo) were investigated. The pH of the steep water decreased as the steeping time increased, which was more pronounced at higher steeping temperature. The solid loss was about 4.0% during steeping. The contents of protein, fat and ash decreased during steeping, which was greater at elevated temperature. The lightness of rice was slightly increased, and the yellowness was decreased upon steeping. The water-binding capacity of rice was increased during steeping at above $15^{\circ}C$. The slight increase of the swelling power of rice at $80^{\circ}C$ was observed upon steeping. The maximum wavelengh for the rice flour-iodine complex was moved to a higher wavelengh, but X-ray diffraction patterns remained constant regardless the steeping conditions. The pasting properties of rice flour (10%) by amylograph indicated that the peak viscosity increased as the steeping time was increased at all steeping temperatures. The steeping resulted in the greater breakdown and the 1ower setback. The log peak viscosity showed a linear relationship with the steeping time. The activation energy and $Q_{10}$ value for the visciosity increase rate was 2, 320 cal/mole and 1.14, respectively.

• Applied Biological Chemistry
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• v.21 no.3
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• pp.144-149
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• 1978

Fermented soy sauce was dehydrated by spray drying to form powder, and moisture sorption properties of powdered soy sauce with or without cover of the flexible films were examined on different relative humidity by using saturated salt solutions at $30^{\circ}$. The results obtained were summarized as follows: The equilibrium moisture content of spray-dried soy sauce containing 18.3% moisture was determined to 52% by graphical interpolation method, and E.M.C. of powdered soy sauce covered with plastic films decreased at low relative humidity whereas sharply increased curves were seen at high relative humidity. The rate constant of moisture adsortion K for the power covered with films were $66.2{\times}10^{-5}\;to\;225{\times}10^{-5}/hr$., and K' became greater when film having higher water vapor transmission rate was used. The shelf-life of powdered soy sauce covered with Al. foil/P.E. film by Brown formula at the accelerated condition of $38^{\circ}$, 92% R. H. was the longest period, 164 days compared with any other films used, and the shortest period, 18 days in P.V.C. film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.597-601
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• 2013

The accelerated thermal aging of a CSPE were carried out for 0, 80.82, 161.63 days at $100^{\circ}C$, which are equal to 0, 40 and 80 years of aging at $50^{\circ}C$, respectively. The volume electrical resistivities of the seawater and freshwater flooding were measured through 3-terminal circuit diagram. The volume electrical resistivities of the 0y, 40y and 80y were $2.454{\times}10^{13}{\sim}1.377{\times}10^{14}{\Omega}{\cdot}cm$, $1.121{\times}10^{13}{\sim}7.529{\times}10^{13}{\Omega}{\cdot}cm$ and $1.284{\times}10^{13}{\sim}8.974{\times}10^{13}{\Omega}{\cdot}cm$ at room temperature, respectively. The dielectric constant of the 0y, 40y and 80y were 2.922~3.431, 2.613~3.285 and 2.921~3.332 at room temperature, respectively. It is certain that the ionic ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) conduction current was formed by the salinity of the seawater. The volume electrical resistivity of the cleaned CSPE via freshwater trends slightly upward with the number of dried days at room temperature. As a result, the $CH_2$ component of thermally accelerated aged CSPE decreased after seawater and freshwater flooding for 5 days respectively, whereas the atoms such as Cl, O, Pb, Al, Si, Sb, S related with the conducting ion ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) component increased relatively.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.358-364
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• 2012

The kinetics of the Fischer-Tropsch synthesis and water gas shift reactions over a precipitated iron catalyst were studied in a 5 channel fixed-bed reactor. Experimental conditions were changed as follows: synthesis gas $H_2$/CO feed ratios of 0.5~2, reactants flow rate of 60~80 ml/min, and reaction temperature of $255{\sim}275^{\circ}C$ at a constant pressure of 1.5 MPa. The reaction rate of Fischer-Tropsch synthesis was calculated from Eley-Rideal mechanism in which the rate-determining step was the formation of the monomer species (methylene) by hydrogenation of associatively adsorbed CO. Whereas water gas shift reaction rate was determined by the formation of a formate intermediate species as the rate-determining step. As a result, the reaction rates of Fischer-Tropsch synthesis for the hydrocarbon formation and water gas shift for the $CO_2$ production were in good agreement with the experimental values, respectively. Therefore, the reaction rates ($r_{FT}$, $r_{WGS}$, $-r_{CO}$) derived from the reaction mechanisms showed good agreement both with experimental values and with some kinetic models from literature.

• Journal of Oral Medicine and Pain
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• v.26 no.2
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• pp.161-171
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• 2001

In order to determine how oral mucosal change relates to inducing factors of burning mouth syndrome, the difference in pain perception scale and keratinization rate between burning mouth syndrome patients and normal subjects were investigated. Twenty patients (13 female, 7 male, mean age: 59 years), presenting in the Department of Oral Medicine, Chonnam National University Hospital were participated in this study. All subjects had been complaining of constant oral burning pain for more than a year, none took any strong analgesics, and none had oral mucosal lesions. Twenty volunteers (11 females, 9 males, mean age: 25 years) were also participated in this study as a control group. The control subjects had never had any symptoms of oral burning pain. A thermal stimulation using a Nd-YAG laser and cytological smear were carried out to anterodorsal part of tongue, tip of tongue, the left buccal mucosa, the lower lip mucosa and the chief complaint site. Stimulation of the dorsum of left hand was also carried out to contrast the mucosal area of burning mouth syndrome subjects and the control subjects. The laser output power could be adjusted from 0.75W to 4W. The pain perception scale of the burning mouth syndrome subjects were lower than in control subjects in the chief complaint area, the anterodorsal part of tongue and the buccal mucosa(p<0.01). The keratinization rate of burning mouth syndrome subjects, however, was higher keratinization rate than in normal subjects in the same area and lower lip mucosa(p<0.001). From above results, the anterodorsal part of tongue is the most appropriate site to use diagnostic laser stimulation. The higher level of keratinization and the lower level of thermal pain perception of the burning mouth syndrome subjects are explained as a protective mechanism against xerostomia and burning sensations. The application of Nd-YAG laser stimuli and cytological smear to oral mucosal surface could therefore be usefully employed as appropriate and standardized diagnostic tools for chronic orofacial pain subjects.

• Journal of IKEEE
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• v.14 no.2
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• pp.51-57
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• 2010

A CMOS rail-to-rail high voltage buffer amplifier is proposed to drive the gamma correction reference voltage of large TFT LCD panels. It is operating by a single supply and only shows current consumption of 0.5mA at 18V power supply voltage. The circuit is designed to drive the gamma correction voltage of 8-bit or 10-bit high resolution TFT LCD panels. The buffer has high slew rate, 0.5mA static current and 1k$\Omega$ resistive and capacitive load driving capability. Also, it offers wide supply range, offset voltages below 50mV at 5mA constant output current, and below 2.5mV input referred offset voltage. To achieve wide-swing input and output dynamic range, current mirrored n-channel differential amplifier, p-channel differential amplifier, a class-AB push-pull output stage and a input level detector using hysteresis comparator are applied. The proposed circuit is realized in a high voltage 0.18um 18V CMOS process technology for display driver IC. The circuit operates at supply voltages from 8V to 18V.

• Korean Journal of Social Welfare
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• v.59 no.1
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• pp.87-116
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• 2007

The purpose of this study is to identify the adaptation experience of foster children. This qualitative research was conducted through in-depth interview of 8 foster children in and over 4th grade. In data analysis of this qualitative study, the grounded theory suggested by Strauss and Corbin(1998) was used. The raw data collected from in-depth interview with the participants were analyzed in open coding, through theoretically sensitive and constant comparisons method. As a result, total 11 categories, 30 subcategories and 96 concepts were generated. In summary, the casual condition that caused the core phenomenon was 'family stability collapse'. The core phenomenon that foster children experience during the process of adaptation was 'marginalization'. The contextual condition that affected the outcome was 'cultural shock' and 'loyalty conflict.' The intervening condition that promote or restrain the action/interaction on core phenomenon were, 'support system', 'resilience menifestation', 'negative predestination'. The action/interaction strategy on core phenomenon were 'will to power' and 'pursuing moral superiority'. As a result, two concepts, 'mechanical adaptation to foster care environment' and 'active formation' of foster care environment' were assumed.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.308-312
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• 2013

Active carbons with high specific surface area and micro pore structure were prepared from the coconut shell char using the chemical activation method of NaOH. The preparation process has been optimized through the analysis of experimental variables such as activating chemical agents to char ratio and the flow rate of gas during carbonization. The active carbons with the surface area (2,481 $m^2/g$) and mean pore size (2.32 nm) were obtained by chemical activation with NaOH. The electrochemical performances of hybrid capacitor were investigated using $LiMn_2O_4$, $LiCoO_2$ as the positive electrode and prepared active carbon as the negative electrode. The electrochemical behaviors of hybrid capacitor using organic electrolytes ($LiPF_6$, $TEABF_4$) were characterized by constant current charge/discharge, cyclic voltammetry, cycle and leakage tests. The hybrid capacitor using $LiMn_2O_4$/AC electrodes had better capacitance than other hybrid systems and was able to deliver a specific energy as high as 131 Wh/kg at a specific power of 1,448 W/kg.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.43-50
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• 2009

Although thin PCBs(Printed Circuit Boards) have recently been required for high density interconnection, high electrical performance, and low manufacturing cost, the utilization of thin PCBs is severely limited by warpage and reliability issues. Warpage of the thin PCB leads to failure in solder-joints and chip. The $B^2it$(Buried Bump Interconnection Technology) for PCB has been developed to achieve a competitive manufacturing price. In this study, chip temperature, package warpage, chip stress and solder-joints stress characteristics of the PCB prepared with $B^2it$ process have been calculated using thermo-mechanical coupled analysis by the FEM(Finite Element Method). FEM computation was carried out with the variations in bump shapes and kinds of materials under 1.5W power of chip and constant convection heat transfer. The results show that chip temperature distribution reached more quickly steady-state status with PCB prepared with $B^2it$ process than PCB prepared with conventional via interconnection structure. Although $B^2it$ structures are effective on low package warpage and chip stress, with high strength bump materials arc disadvantage for low stress of solder-joints. Therefore, it is recommended that optimized bump shapes and materials in PCB design should be considered in terms of reliability characteristics in the packaging level.