• 천문학회보
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• 제40권1호
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• pp.63.2-63.2
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• 2015

Solar flare is one of the energetic phenomena observed on the Sun, and it is often accompanied with eruptions such as global-scale eruption of a flux rope (filament/prominence eruption) and small-scale eruption of a plasmoid. A flare itself is a dissipative phenomenon where accumulated electric current representing free magnetic energy is dissipated quickly at a special location called a current sheet formed in a generally highly conductive solar corona. Previous studies have demonstrated how a solar magnetic field placed on the Sun forms a current sheet when magnetic shear is added to the field. Our study is focused on a self-consistent process of how a subsurface magnetic field emerges into the solar atmosphere and forms a current sheet in the corona. This study also gives light to a relation among a flare and two types of flare-associated eruptions; flux-rope eruption and plasmoid eruption.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

• 마이크로전자및패키징학회지
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• 제13권3호
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• pp.1-8
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• 2006

인쇄회로기판이나 플라스틱 패키지 등 다양한 전자소자 부품내 배선간 간격이 갈수록 좁아짐에 따라 최근 많이 발생하고 있는 electrochemical migration(ECM) 현상은 양극에서 이온화된 금속에 의한 conductive anodic filament(CAF) 및 덴드라이트와 같은 전도성 필라멘트의 성장으로 인해 전자부품의 절연파괴를 일으키고 있다. 본 연구에서는 공정조성 Sn-37Pb솔더 합금의 ECM 거동과 부식특성 사이의 연관성 평가를 통해 ECM 우세원소를 파악하기 위해 D.I Water 및 NaCl 용액에서 Water Drop Test(WDT)와 분극실험을 실시하여 서로 비교하였다. WDT 실시 결과 공정조성 Sn-37Pb 솔더 합금에서 Pb-rich 상이 Sn-rich 상보다 우선적으로 양극 패드에서 녹아나서 상대적으로 ECM 저항성이 낮았으며, 음극패드에서 자라난 덴드라이트에도 Pb가 훨씬 많이 존재하였다. NaCl에서의 분극실험 결과 전기화학적으로 부동태 피막을 형성하는 Sn에 비해 Pb의 부식속도가 크게 나타났으며, WDT의 결과와 같은 경향을 보였다. 따라서 공정조성 SnPb 솔더 합금의 부식저항성과 ECM 저항성 사이에는 좋은 상관관계가 존재한다.

• Corrosion Science and Technology
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• 제6권6호
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• pp.282-285
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• 2007

Smaller size and higher integration of electronic systems make narrower interconnect pitch not only in chip-level but also in package-level. Moreover electronic systems are required to operate in harsher conditions, that is, higher current / voltage, elevated temperature / humidity, and complex chemical contaminants. Under these severe circumstances, electronic components respond to applied voltages by electrochemically ionization of metals and conducting filament forms between anode and cathode across a nonmetallic medium. This phenomenon is called as the electrochemical migration. Many kinds of metal (Cu, Ag, SnPb, Sn etc) using in electronic packages are failed by ECM. Eutectic SnPb which is used in various electronic packaging structures, that is, printed circuit boards, plastic-encapsulated packages, organic display panels, and tape chip carriers, chip-on-films etc. And the material for soldering (eutectic SnPb) using in electronic package easily makes insulation failure by ECM. In real PCB system, not only metals but also many chemical species are included. And these chemical species act as resources of contamination. Model test systems were developed to characterize the migration phenomena without contamination effect. The serpentine-shape pattern was developed for analyzing relationship of applied voltage bias and failure lifetime by the temperature / humidity biased(THB) test.

• 한국기계가공학회지
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• 제19권1호
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• pp.63-71
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• 2020

Recently, to improve convenience, flexible electronics are quickly being developed for a number of application areas. Flexible electronic devices comprise characters such as being bendable, stretchable, foldable, and wearable. Effectively manufacturing flexible electronic devices requires high efficiency, low costs, and simple processes for manufacturing technology. Through this study, we enabled the rapid production of multifunctional flexible bending sensors using a simple, low-cost Fused Deposition Modeling (FDM) 3D printer. Furthermore, we demonstrated the possibility of the rapid production of a range of functional flexible bending sensors using a simple, low-cost FDM 3D printer. Accurate and reproducible functional materials made by FDM 3D printers are an effective tool for the fabrication of flexible sensor electronic devices. The 3D-printed flexible bending sensor consisted of polyurethane and a conductive filament. Two patterns of electrodes (straight and Hilbert curve) for the 3D printing flexible sensor were fabricated and analyzed for the characteristics of bending displacement. The experimental results showed that the straight curve electrode sensor sensing ability was superior to the Hilbert curve electrode sensor, and the electrical conductivity of the Hilbert curve electrode sensor is better than the straight curve electrode sensor. The results of this study will be very useful for the fabrication of various 3D-printed flexible sensor devices with multiple degrees of freedom that are not limited by size and shape.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• 조명전기설비학회논문지
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• 제20권7호
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• pp.46-52
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• 2006

[ $Mg_2Ni$ ]계 합금 입자의 수소저장 특성에 대한 표면처리 효과가 마이크로 전극 측정법에 의해 검토되었다. 카본-섬유로 된 마이크로 전극을 KOH 수용액 속에서 조정자를 사용하여 수소 단일입자에 접촉시켰다. 상온에서 $Mg_2Ni$ 합금의 수소저장 특성은 니켈 도금용액에 의한 표면 처리에 의해 크게 개선되었다. 니켈 도금용액 속에 있는 함유된 나트륨염(sodium phosphate 및 sodium dihydrogen citrate)이 합금을 아몰퍼스와 같은 형태로 만들었으며, 그 결과 상온에서 수소 흡장/방출 용량이 최초의 17[mAh/g]에서 150[mAh/g]로 향상되었다. 합금 입자 내에서 수소원자의 겉보기 화학적 확산계수를 계산하기 위하여 Potential-step 실험을 실시하였으며 데이터 해석을 위해 구형확산 모델을 적용하였다. 실험결과로서 겉보기 확산계수($D_{app}$)는 수소 흡장 및 방출되는 전 과정에서 $10^{-8}{\sim}10^{-9}[cm^2/s]$ 수준인 것으로 확인되었다.