Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Characterization of Resistive Switching in PVP GQD / HfOx Memristive Devices

PVP GQD / HfOx 구조를 갖는 전도성 필라멘트 기반의 저항성 스위칭 소자 특성

  • Hwang, Sung Won (Department of System Semiconductor Engineering, Sangmyung University)
  • 황성원 (상명대학교 시스템반도체공학과)
  • Received : 2021.03.15
  • Accepted : 2021.03.17
  • Published : 2021.03.31
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Abstract

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

Keywords

References

  1. Yang, Y., Ouyang, J., Ma, L., Tseng, R. J. H. & Chu, C. W. "Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices," Adv. Funct. Mater. v.16, pp.1001-1014, 2006. https://doi.org/10.1002/adfm.200500429
  2. Scott, J. C. & Bozano, L. D. "Nonvolatile Memory Elements Based on Organic Materials," Adv. Mater. v.19, pp.1452-1463, 2007. https://doi.org/10.1002/adma.200602564
  3. Chujo, Y. & Tamaki, R. "New Preparation Methods for Organic-Inorganic Polymer Hybrids," MRS Bulletin v.26, pp.389, 2001. https://doi.org/10.1557/mrs2001.92
  4. Ogoshi, T. & Chujo, Y. "Organic-inorganic polymer hybrids prepared by the sol-gel method. Composite Interfaces," v.11, pp.539, 2005. https://doi.org/10.1163/1568554053148735
  5. Frank, D. J. et al. "Device scaling limits of Si MOSFETs and their application dependencies," Proc. IEEE v.89, pp.259-288, 2001. https://doi.org/10.1109/5.915374
  6. J. H. Lee, "A Study of Dynamic Properties of Graphene-Nanoribbon Memory," J. Semiconductor & Display Technology, v.13, no.2, pp.53-56, 2014.
  7. D-K. Lee, S-J. kim, S-O. Ryu, "Stack-Structured Phase Change Memory Cell for Multi-State Storage," J. Semiconductor & Display Technology, v.8, no.1, pp.13-17, 2009.
  8. Y. S. Ku, K-H. Chang, "Stack-Structured Phase Change Memory Cell for Multi-State Storage," Proceedings of the Korean Society of Semiconductor Equipment Technology, pp.250-250, 2007.
  9. Merolla, P. A. et al. "A million spiking-neuron integrated circuit with a scalable communication network and interface," Science v.345, pp.668-673, 2014. https://doi.org/10.1126/science.1254642
  10. Serb, A. et al. "Unsupervised learning in probabilistic neural networks with multi-state metal-oxide mem-ristive synapses," Nat. Commun. v.7, pp.12611, 2016. https://doi.org/10.1038/ncomms12611
  11. Garbin, D. et al. "HfO2-based OxRAM devices as synapses for convolutional neural networks," IEEE Trans. Electron Devices v.62, pp.2494-2501, 2015. https://doi.org/10.1109/TED.2015.2440102
  12. Wang, P., Hu, Q., Zhang, Y., Zhang, C., Liu, Y. & Cheng, J. "Two-step quantization for low-bit neural networks," In: Proceedings of the IEEE Conference on Computer Vision and Pattern Recognition IEEE, 2018.
  13. Wang, X., Xie, W. & Xu, J. B. "Graphene based non-volatile memory devices," Adv. Mater. v.26, pp.5496-5503, 2014. https://doi.org/10.1002/adma.201306041
  14. Wang, X.-F., Zhao, H.-M., Yang, Y. & Ren, T.-L. "Graphene resistive random memory-the promising memory device in next generation," Chin. Phys. B v.26, pp.038501, 2017. https://doi.org/10.1088/1674-1056/26/3/038501
  15. Li, Y., Sinitskii, A. & Tour, J. M. "Electronic two-terminal bistable graphitic memories," Nat. Mater. v.7, pp.966, 2008. https://doi.org/10.1038/nmat2331
  16. Yang, J. J., Strukov, D. B. & Stewart, D. R. "Memristive devices for computing," Nat. Nanotechnol. v.8, pp.13, 2013. https://doi.org/10.1038/nnano.2012.240
  17. Molina-Reyes, J. & Hernandez-Martinez, L. "Understanding the resistive switching phenomena of stacked Al/Al2O3/Al thin films from the dynamics of conductive filaments," Complexity. v.201, pp.1-10, 2017.
  18. Yang, J. J. et al. "High switching endurance in TaOx memristive devices," Appl. Phys. Lett. v.97, pp.232102, 2010. https://doi.org/10.1063/1.3524521
  19. Ou-Yang, W., Chen, X., Weis, M., Manaka, T. & Iwamoto, M. "Tuning of threshold voltage in organic field-effect transistor by dipole monolayer," Jpn. J. Appl. Phys. v.49, pp.04DK04, 2010.
  20. Sobrino Fernandez, M., Peeters, F. M. & Neek-Amal, M. "Electric-field-induced structural changes in water confined between two graphene layers," Phys. Rev. B v.94, pp.045436, 2016. https://doi.org/10.1103/physrevb.94.045436
  21. Deswal, S., Malode, R. R., Kumar, A. & Kumar, A. "Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory," RSC Adv. v.9, pp.9494-9499, 2019. https://doi.org/10.1039/c9ra00726a
  22. Lynch, G. S., Dunwiddie, T. & Gribkoff, V. "Heterosynaptic depression: a postsynaptic correlate of long-term potentiation," Nature v.266, pp.737-739, 1977. https://doi.org/10.1038/266737a0
  23. Bailey, C. H., Giustetto, M., Huang, Y. Y., Hawkins, R. D. & Kandel, E. R. "Is heterosynaptic modulation essential for stabilizing Hebbian plasticity and memory," Nat. Rev. Neurosci. v.1, pp.11-20, 2000. https://doi.org/10.1038/35036191
  24. Lynch, G. S., Dunwiddie, T. & Gribkoff, V. "Heterosynaptic depression: a postsynaptic correlate of long-term potentiation," Nature v.266, pp.737-739, 1977. https://doi.org/10.1038/266737a0
  25. Vasicek, Z., Mrazek, V. & Sekanina, L. "Automated circuit approximation method driven by data distribution," In: 2019 Design, Automation and Test in Europe Conference and Exhibition IEEE, 2019.