• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.1-8
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• 1998

An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.42-46
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• 2003

In this paper, an MMIC broadband amplifier for wireless communication systems has been developed by using an active feedback method. This active feedback operates at much higher frequencies than a method by a spiral inductor feedback and its size is independent of the inductance value. The MMIC broadband amplifier was designed using a $0.5{\;}{\mutextrm{m}}$ MESFET library. The fabricated chip area was $1.4{\;}mm{\;}{\times}{\;}1.4{\;}mm. Measurement showed a gain of 18 dB with a gain flatness of ${\pm}3$ dB in a 1.5 GHz~3.5 GHz band. The maximum output power and the minimum noise figure were 14 dBm and 2.5 dB in the same band, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.283-288
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• 2008

A post-linearization technique for the differrential CMOS LNA is presented. The proposed method uses an additional cross-coupled common-source FET pair to cancel out the third-order intermodulation ($IM_3$) current of the main differential amplifier. This technique is applied to enhance the linearity of CMOS LNA using $0.18-{\mu}m$ technology. The LNA achieved +10.2 dBm IIP3 with 13.7 dB gain and 1.68 dB NF at 2 GHz consuming 11.8 mA from a 1.8-V supply. It shows IIP3 improvement by 6.6 dB over the conventional cascode LNA without the linearizing circuit.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.638-648
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• 2003

An active capacitance circuit is analyzed in depth and its application to active RF BPF with low noise figure is discussed. The characteristics of the active capacitance circuit made of FET[1] exhibits negative resistance and conventional capacitance, which is easily controlled. However, it is difficult to make the negative resistance adequate in the designated frequency range due to the lack of detailed analysis, which could make an active circuit unstable as the frequency is going higher or lower. In this paper, we analyzed the negative resistance characteristics of active capacitance circuits and also presented the method that the flatness of passband can be controlled. Finally we have designed a 4-stage active BPE, which results in bandwidth of 100 MHz, 0,04 dB insertion loss, 0.2 dB ripple, and noise figure of 2.4 dB at 1.75 GHz band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.11
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• pp.1193-1203
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• 2008

An active antenna(AA) can have wider bandwidth and more gain with small antenna size than those of passive antennas. However, AA inherently generates thermal noise and spurious signals from an active device. Moreover, the spurious performance of AA is very important in a highly sensitive receiving system since it is located at the front end of the receiving system. In this study, we developed an AA with $100{\sim}500\;MHz$, having the output P1dB higher than 3 dBm and little spurious signals in real environments. To achieve such performance, we designed an AA with 3-stage amplifier using CD(common drain) FET and 2 BJTs. Its electrical performances were simulated using ADS. The measurement results for typical gain, NF, OIP3, VSWR and P1dB in the required frequency band were 9.7 dBi, 10 dB, 14 dBm, 1.7:1 and 3 dBm respectively. They are in good agreement with simulation results. The unwanted spectrum level of the proposed AA is $10{\sim}30\;dB$ lower than that of the antenna with CS(common source) FET configuration at a west suburban area of Seoul, which shows that the proposed AA can be applicable to a highly sensitive receiving system for detecting unknown weak signals mixed with broadcasting and civilian communication signals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.60-68
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• 2007

A technique is presented to extract differential second harmonic output from common source nodes of a cross-coupled P-& N-FET oscillator. Provided the impedances at the common source nodes are optimized and the fundamental swing at the VCO core stays in a proper mode, it is found that the amplitude and phase errors can be kept within $0{\sim}1.6dB$ and $+2.2^{\circ}{\sim}-5.6^{\circ}$, respectively, over all process/temperature/voltage corners. Moreover, an impedance-tuning circuit is proposed to compensate any unexpectedly high errors on the differential signal output. A Prototype 5-GHz VCO with a 2.5-Hz LC resonator is implemented in $0.18-{\mu}m$ CMOS. The error signal between the differential outputs has been measured to be as low as -70 dBm with the aid of the tuning circuit. It implies the push-push outputs are satisfactorily differential with the amplitude and phase errors well less than 0.34 dB and $1^{\circ}$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1114-1122
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• 2005

In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.590-598
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• 2004

An active capacitance circuit which employs series feedback network for the implement of negative resistance and low noise operation is analyzed in depth and its application to low noise active RF BPF's is discussed. Whereas many authors reported a lot of circuits that embody negative resistance circuit most of them have concerns for the equivalent resistance and reactance value at the center frequency. In this case, it could be possible to face a problem that the negative resistance circuit becomes unstable, or have poor flatness in passband because of insufficient forecast for the negative resistance values as the frequency goes higher or lower. In this paper, we extracted the exact equivalent values of this circuit and analyzed the RF characteristics with the varying the values of active devices and feedback circuits and presented the method that the flatness of passband can be improved. We have designed a 4-pole active BPF, which has the bandwidth of 60 ㎒, 0.67 ㏈ insertion loss, 0.3 ㏈ ripple, and noise figure of 3.0 ㏈ at 1.99 ㎓ band.