• 제목/요약/키워드: coefficients of thermal expansion

검색결과 211건 처리시간 0.024초

Czochralski법에 의한 ZnWO4 단결정 성장 및 특성분석 (Single crystal growth of ZnWO4 by the Czochralski method and characterization)

  • 임창성
    • 분석과학
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    • 제23권2호
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    • pp.103-108
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    • 2010
  • Czochralski법에 의한 $ZnWO_4$ 단결정을 [100], [010], [001] 방향으로 성공적으로 성장시켰다. $ZnWO_4$ 단결정 성장을 위한 종자결정은 백금 침을 사용하여 용융액으로부터 모세관 현상을 응용한 결정성장으로 얻을 수 있었다. 각 축 방향에 따른 성장조건이 rotation speed, pulling rate, 성장된 결정의 직경등의 변수를 가지고 조사되어졌다. 성장된 결정의 냉각시 발생되는 균열을 annealing 효과에 의하여 방지할 수 있었다. 성장된 결정의 방위는 Laue back reflection으로 결정하였다. 각 축 방향으로 성장된 결정의 미세구조적 특징이 논하여졌으며, 경도, 열팽창계수 및 유전상수의 물리적 특성이 평가되어졌다.

Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy

  • Kim, Beong-Ju
    • 한국결정성장학회지
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    • 제12권6호
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    • pp.299-303
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    • 2002
  • The relationship of crystallinity between defects distribution with (100) ZnTe/GaAs using HWE growth was investigated by four crystal rocking curve (FCRC) and transmission electron microscopy (TEM). The thickness dependence of crystal quality in ZnTe epilayer was evaluated. The FWHM value shows a strong dependence on ZnTe epilayer thickness. For the films thinner than 6 ${\mu}{\textrm}{m}$, the FWHM value decreases very steeply as the thickness increases. For the films thicker than 6 ${\mu}{\textrm}{m}$, it becomes an almost constant value. At the thickness of 12 $\mu\textrm{m}$ with the smallest value of 66 arcsec. which is the best value so far reported on ZnTe epilayers was obtained. Investigation into the nature and behavior of dislocations with film thickness in (100) ZnTe/(100)GaAs heterostructures grown by Hot Wall Epitaxy (HWE). This film defects range from interface to 0.7 ${\mu}{\textrm}{m}$ thickness was high density, due to the large lattice mismatch and thermal expansion coefficients. The thickness of 0.7~1.8 ${\mu}{\textrm}{m}$ was exists low defect density. In the thicker range than 1.8 ${\mu}{\textrm}{m}$ thickness was measured hardly defects.

저합금강 기어의 침탄 및 소입 공정에 대한 전산모사 (Computational Simulation of Carburizing and Quenching Processes of a Low Alloy Steel Gear)

  • 이경호;한정호;김경수;윤상대;이영국
    • 열처리공학회지
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    • 제28권6호
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    • pp.300-309
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    • 2015
  • The aim of the present study was to predict the variations in microstructure and deformation occurring during gas carburizing and quenching processes of a SCM420H planetary gear in a real production environment using the finite element method (FEM). The motivation for the present study came from the fact that previous FEM simulations have a limitation of the application to the real heat treatment process because they were performed with material properties provided by commercial programs and heat transfer coefficients (HTC) measured from laboratory conditions. Therefore, for the present simulation, many experimentally measured material properties were employed; phase transformation kinetics, thermal expansion coefficients, heat capacity, heat conductivity and HTC. Particularly, the HTCs were obtained by converting the cooling curves measured with a STS304 gear without phase transformations using an oil bath with an agitator in a real heat treatment factory. The FEM simulation was successfully conducted using the aforementioned material properties and HTC, and then the predicted results were well verified with experimental data, such as the cooling rate, microstructure, hardness profile and distortion.

分子線에피택셜 方法으로 成長한 I $n_{0.53}$GaTEX>$_{0.47}$As/InTEX>$_{0.52}$AlTEX>$_{0.48}$As/InP P-HEMT 構造內의 V 및 X字形 缺陷에 關한 硏究 (A study on the V and X shpe defects in I $n_{0.53}$GaTEX>$_{0.47}$As/InTEX>$_{0.52}$AlTEX>$_{0.48}$As/InP P-HEMT structure grown by molecular beam epitaxy method)

  • 이해권;홍상기;김상기;노동원;이재진;편광의;박형무
    • 전자공학회논문지D
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    • 제34D권7호
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    • pp.56-61
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    • 1997
  • I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As pseudomorphic high electron mobility transistor (P-HEMT) structures were grown on semi-insulating InP substrates by molecular beam epitzxy method. The hall effect measuremetn was used to measure the electrical properties and the photoluminescence (PL) measurement was used to measure the electrical properties and the photoluminescence(PL) measurement for optical propety. By the cross-sectional transmission electron microscopy (XTEM) investigation of the V and X shape defects including slip with angle of 60.deg. C and 120.deg. C to surface in the sampel, the defects formation mecahnism in the I $n_{0.52}$A $l_{0.48}$As epilayers on InP substrates could be explained with the different thermal expansion coefficients between I $n_{0.52}$A $l_{0.48}$As epilayers and InP substrate.d InP substrate.

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STRAIN AND TEMPERATURE CHANGES DURING THE POLYMERIZATION OF AUTOPOLYMERIZING ACRYLIC RESINS

  • Ahn Hyung-Jun;Kim Chang-Whe;Kim Yung-Soo
    • 대한치과보철학회지
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    • 제39권6호
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    • pp.709-734
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    • 2001
  • The aims of this experiment were to investigate the strain and temperature changes simultaneously within autopolymerzing acrylic resin specimens. A computerized data acquisition system with an electrical resistance strain gauge and a thermocouple was used over time periods up to 180 minutes. The overall strain kinetics, the effects of stress relaxation and additional heat supply during the polymerization were evaluated. Stone mold replicas with an inner butt-joint rectangular cavity ($40.0{\times}25.0mm$, 5.0mm in depth) were duplicated from a brass master mold. A strain gauge (AE-11-S50N-120-EC, CAS Inc., Korea) and a thermocouple were installed within the cavity, which had been connected to a personal computer and a precision signal conditioning amplifier (DA1600 Dynamic Strain Amplifier, CAS Inc., Korea) so that real-time recordings of both polymerization-induced strain and temperature changes were performed. After each of fresh resin mixture was poured into the mold replica, data recording was done up to 180 minutes with three-second interval. Each of two poly(methyl methacrylate) products (Duralay, Vertex) and a vinyl ethyl methacrylate product (Snap) was examined repeatedly ten times. Additionally, removal procedures were done after 15, 30 and 60 minutes from the start of mixing to evaluate the effect of stress relaxation after deflasking. Six specimens for each of nine conditions were examined. After removal from the mold, the specimen continued bench-curing up to 180 minutes. Using a waterbath (Hanau Junior Curing Unit, Model No.76-0, Teledyne Hanau, New York, U.S.A.) with its temperature control maintained at $50^{\circ}C$, heat-soaking procedures with two different durations (15 and 45 minutes) were done to evaluate the effect of additional heat supply on the strain and temperature changes within the specimen during the polymerization. Five specimens for each of six conditions were examined. Within the parameters of this study the following results were drawn: 1. The mean shrinkage strains reached $-3095{\mu}{\epsilon},\;-1796{\mu}{\epsilon}$ and $-2959{\mu}{\epsilon}$ for Duralay, Snap and Vertex, respectively. The mean maximum temperature rise reached $56.7^{\circ}C,\;41.3^{\circ}C$ and $56.1^{\circ}C$ for Duralay, Snap, and Vertex, respectively. A vinyl ethyl methacrylate product (Snap) showed significantly less polymerization shrinkage strain (p<0.01) and significantly lower maximum temperature rise (p<0.01) than the other two poly(methyl methacrylate) products (Duralay, Vertex). 2. Mean maximum shrinkage rate for each resin was calculated to $-31.8{\mu}{\epsilon}/sec,\;-15.9{\mu}{\epsilon}/sec$ and $-31.8{\mu}{\epsilon}/sec$ for Duralay, Snap and Vertex, respectively. Snap showed significantly lower maximum shrinkage rate than Duralay and Vertex (p<0.01). 3. From the second experiment, some expansion was observed immediately after removal of specimen from the mold, and the amount of expansion increased as the removal time was delayed. For each removal time, Snap showed significantly less strain changes than the other two poly(methyl methacrylate) products (p<0.05). 4. During the external heat supply for the resins, higher maximum temperature rises were found. Meanwhile, the maximum shrinkage rates were not different from those of room temperature polymerizations. 5. From the third experiment, the external heat supply for the resins during polymerization could temporarily decrease or even reverse shrinkage strains of each material. But, shrinkage re-occurred in the linear nature after completion of heat supply. 6. Linear thermal expansion coefficients obtained from the end of heat supply continuing for an additional 5 minutes, showed that Snap exhibited significantly lower values than the other two poly(methyl methacrylate) products (p<0.01). Moreover, little difference was found between the mean linear thermal expansion coefficients obtained from two different heating durations (p>0.05).

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가스터빈 블레이드 열차폐코팅의 곡률에 따른 기계적 특성 평가 (Evaluation of the Mechanical Characteristics According to the Curvature of Thermal Barrier Coating)

  • 이정민;석창성;구재민;김성혁;;;문원기
    • 대한기계학회논문집A
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    • 제38권12호
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    • pp.1427-1430
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    • 2014
  • 열차폐 코팅은 고온 화염의 열이 블레이드의 모재에 직접 전달되는 것을 막는 역할을 하며, 세라믹 재질의 탑코팅층과 금속 모재간 결합력을 증가시켜주는 본드코팅층으로 이루어져있다. 이러한 열차폐 코팅 기술로 인하여 블레이드 표면의 온도가 화염온도에 비해 약 $100{\sim}170^{\circ}C$정도 낮아지게 된다. 이러한 열차폐 코팅은 금속모재와 코팅층의 열팽창 계수의 차이로 인해 내부 응력이 발생하게 되며, 블레이드의 형상 및 위치에 따라 발생하는 응력이 다르다. 따라서 본 논문에서는 열차폐코팅의 내구성 시험에 보편적으로 사용되는 코인형 시험편에 대하여 모재의 곡률에 따른 유한요소해석을 수행하고 열차폐 코팅에서 발생하는 내부 응력변화를 고찰하였다. 그 결과 탑코팅에 최저응력이 발생할 때의 곡률을 도출하였고 최저응력에서의 곡률과 차이가 커질수록 발생하는 응력이 커짐을 확인하였다.

열응력에 의한 실리콘 인터포저 위 금속 패드의 박락 현상 (Thermal Stress Induced Spalling of Metal Pad on Silicon Interposer)

  • 김준모;김보연;정청하;김구성;김택수
    • 마이크로전자및패키징학회지
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    • 제29권3호
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    • pp.25-29
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    • 2022
  • 최근 전자 패키징 기술의 중요성이 대두되며, 칩들을 평면 외 방향으로 쌓는 이종 집적 기술이 패키징 분야에 적용되고 있다. 이 중 2.5D 집적 기술은 실리콘 관통 전극를 포함한 인터포저를 이용하여 칩들을 적층하는 기술로, 이미 널리 사용되고 있다. 따라서 다양한 열공정을 거치고 기계적 하중을 받는 패키징 공정에서 이 인터포저의 기계적 신뢰성을 확보하는 것이 필요하다. 특히 여러 박막들이 증착되는 인터포저의 구조적 특징을 고려할 때, 소재들의 열팽창계수 차이에 기인하는 열응력은 신뢰성에 큰 영향을 끼칠 수 있다. 이에 본 논문에서는 실리콘 인터포저 위 와이어 본딩을 위한 금속 패드의 열응력에 대한 기계적 신뢰성을 평가하였다. 인터포저를 리플로우 온도로 가열 후 냉각 시 발생하는 금속 패드의 박리 현상을 관측하고, 그 메커니즘을 규명하였다. 또한 높은 냉각 속도와 시편 취급 중 발생하는 결함들이 박리 양상을 촉진시킴을 확인하였다.

PECVD에 의해 증착된 TiN 박막의 잔류응력 (The Residual Stress of TiN Thin Film Deposited by PECVD)

  • 송기덕;남옥현;이인우;이건환;김문일
    • 열처리공학회지
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    • 제6권2호
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    • pp.70-78
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    • 1993
  • The presence of a residual stress in a thin film affects the properties and performances of the film, so the study of stress in a film must be very important. In this study, therefore, considering the characteristics of PECVD process, it was discussed that the residual stress, measured by $sin^2{\Psi}$ method, fo TiN films deposited on substrates with different TECs (thermal expansion coefficients) changed with film thickness. As a results, it was obtained that the residual stress of TiN film was compressive stress about all kinds of substrates and increased with film thickness. Also, the compressive residual stresses of TiN films increased in Si, Ti, STS304 order. According to the above results, we confirmed that the changes of residual stress of TiN film with substrates were due to the thermal stress originated form the difference in the TECs of the film and substrates, and that the intrinsic stress had dominating effect on the residual stress of TiN film deposited by PECVD. And in this study, the intrinsic stress of TiN film was compressive stress in spite of the Zone 1 structure. It is due to the entrapment of impurities in grain boundary or void.

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MEMS 접착제용 에폭시 복합재의 아미노 변성 실록산 첨가에 의한 효과 (Effect of Amino Modified Siloxane on the Properties of Epoxy Composites for MEMS Adhesives)

  • 이동현;유기환;김대흠
    • Korean Chemical Engineering Research
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    • 제47권2호
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    • pp.203-207
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    • 2009
  • 소형 반도체 접착에 쓰이는 비전도성 고분자 접착제에서 발생하는 문제점으로는 접착소재와 칩 또는 기판 간의 열 팽창계수 차이에 의한 박리, 크래킹 및 접착력 부족 등이 있다. 이러한 결점의 보완을 위하여 무기입자를 첨가한 고분자 복합소재를 통해 접착제의 열팽창계수를 낮추거나, 접착소재에 유연성 첨가제를 첨가하는 방법 등이 사용되고 있다. 본 연구에서는 양 말단에 아민기를 가지는 아미노 변성 실록산(AMS)의 함량을 1, 3, 5 phr로 변화시켜 실록산/에폭시 복합재를 제조하였다. 그 결과, 실록산의 첨가는 유리전이 온도를 $134^{\circ}C$에서 $122^{\circ}C$까지, 모듈러스를 2,425 MPa에서 2,143 MPa까지 감소시켰으며, 열팽창계수는 67 ppm/에서 71 ppm/까지 상승시켰다. 실록산은 유연성 부여에는 효과를 나타냈지만, 유리전이온도의 감소를 가져오는 것을 확인하였다.

N-pole 종류의 FSS가 결합된 복합재료 구조의 잔류응력과 전파투과특성 (Study on Thermal Residual Stresses and Transmission Characteristics in N-pole Type Frequency Selective Surface Embedded Composite Structures)

  • 박경미;황인한;전흥재;홍익표;박용배;김윤재
    • 한국전산구조공학회논문집
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    • 제26권2호
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    • pp.123-130
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    • 2013
  • 본 논문에서는 주파수 선택적 투과막(FSS)이 결합된 복합재료 구조에서 구성 재료 간의 열팽창계수 차이로 잔류응력이 발생하므로 이로 인한 층간분리나 FSS의 손상 등 구조적인 파손 가능성과 잔류응력으로 인하여 변형된 FSS가 전파투과특성에 미치는 영향에 대하여 연구하였다. FSS는 단위요소의 종류, 설계변수, 배열에 따라 전파특성이 다르게 나타나므로, PSO 알고리즘을 이용하여 다이폴이 목표주파수에서 투과특성을 갖도록 설계하고 그 설계치수를 다른 N-pole 종류 단위요소(Tripole, Cross dipole, Jerusalem cross)에 적용하여, 복합재료 구조에 발생하는 잔류응력과 그로인한 구조적 손상과 전파 특성을 영향성을 관찰하고 FSS패턴과 복합재료의 적층 변화에 따라 비교하였다.