Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 7
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- Pages.56-61
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- 1997
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- 1226-5845(pISSN)
A study on the V and X shpe defects in I $n_{0.53}$ GaTEX>$_{0.47}$As/InTEX>$_{0.52}$AlTEX>$_{0.48}$As/InP P-HEMT structure grown by molecular beam epitaxy method
分子線에피택셜 方法으로 成長한 I $n_{0.53}$ GaTEX>$_{0.47}$As/InTEX>$_{0.52}$AlTEX>$_{0.48}$As/InP P-HEMT 構造內의 V 및 X字形 缺陷에 關한 硏究
Abstract
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